密闭微波消解-电感耦合等离子体质谱法测定烟用香精中多种微量元素

烟用香精对卷烟的香、吃味和质量稳定有重要影响,为了有效控制香精质量,降低卷烟主流烟气中有害元素的含量,采用密闭微波消解-电感耦合等离子体质谱法同时测定了烟用香精中铍、钒、铬、锰、镍、铜、锌、砷、硒、锶、钼、镉、铊和铅14种元素,方法的线性相关系数0.999 5~1.000 0,相对标准偏差1.3%~9.5%(n=5),检出限0.003~0.13μg.L-1,加标回收率88.1%~109.3%。结果表明方法能够满足微量元素的分析要求。用实验方法测定了38个牌号烟用香精中铍、钒等14种元素的含量。结果发现:(1)香精中锰、锌、锶的含量较高,硒、镍、铬、铜次之,铍、铊、钼、镉、钒、铅和砷的含量最低,其平均值均小于0.1μg.g-1。(2)锰、镉、锶的含量在不同香精之间差别较大,其变异系数分别为276.4%,238.7%,243.8%。     

四种新型仲胺配合物的合成、表征及与ct-DNA相互作用的光谱研究

合成了新型仲胺类配体L(N,N’-二(4-甲基苄基)乙二胺)及其四种过渡金属的硝酸盐配合物,[ML2(H2O)2]2+.2NO3-(M=CuⅡ,CoⅡ,NiⅡ,ZnⅡ),利用元素分析、红外、1H NMR等对其结构进行了表征,其中用X-ray单晶衍射解析了Cu-L单晶结构,为波谱分析推测的分子结构进行了验证。通过紫外、荧光光谱研究了该四种金属配合物与小牛胸腺DNA的相互作用,结果表明配合物与DNA的作用方式均为静电结合,Cu-L,Co-L,Ni-L,Zn-L与DNA的结合常数分别为:1.67×103,2.5×103,1.35×103和9.85×102。     

Results from DAMA/LIBRA at Gran Sasso

The DAMA project is an observatory for rare processes and it is operative deep underground at the Gran Sasso National Laboratory of the I.N.F.N. In particular, the DAMA/LIBRA (Large sodium Iodide Bulk for RAre processes) set-up consists of highly radiopure NaI(Tl) detectors for a total sensitive exposed mass of ?250 kg. Recent results, obtained by this set-up by exploiting the model independent annual modulation signature of Dark Matter (DM) particles, have confirmed and improved those obtained by the former DAMA/NaI experiment. A model independent evidence for the presence of Dark Matter particles in the galactic halo is cumulatively obtained at 8.2?σ C.L. No systematics or side reactions able to account for the measured modulation amplitude and to contemporaneously satisfy all the many specific requirements of the signature have been found or suggested by anyone over more than a decade. An example of one of the many possible model dependent corollary quests for the candidate particles and for the related astrophysical, nuclear and particle physics scenarios is presented considering the whole cumulative exposure. Future perspectives are shortly addressed.     

Finite element modeling of the interaction of laser-generated ultrasound with a surface-breaking notch in an elastic plate

The interaction of surface acoustic waves generated by laser line source in the thermoelastic regime with surface notches are investigated. The finite element method is used to establish the model of the transient displacement field for surface notches with various depths and orientation. The magnitude of the signal enhancement in the near field and the mechanism by which this occurs are explained. The positions of notches were evaluated by the reflected Rayleigh wave. The depths and orientations of the notches were also determined using a shear wave that was generated through mode conversion of a surface acoustic wave at the notch tip. The results agree with previously published experimental measurements.     

Measuring thickness change of transparent plate by electronic speckle pattern interferometry and digital image correlation

The thickness change of transparent plates was measured by electronic speckle pattern interferometry (ESPI) method and digital image correlation (DIC) method. An out-of-plane ESPI system was developed based on the Michelson interferometer, and a new thickness measurement method was designed, which is on the basis of Snell's law of refraction and DIC. The main principles and experimental procedures of these two methods were presented. The thickness change of polymethyl specimens under uniaxial tensile loading were measured by the optical techniques and compared with each other. The results reveal that the data obtained with DIC method achieve better linearity than ESPI.     

Optical switch with low-phase transition temperature based on thin nanocrystalline VOx film

An optical switch is fabricated by using micromachining technology, which is based on thin nanocrystalline vanadium oxide (VO_x) film, and it consists of four layers: a silicon (Si) substrate layer, a VO_x layer, a Si₃N₄ buffer layer, and an aurum (Au) electrode layer. By applying a switching power supply to a pair of the Au electrodes, the optical switch is controlled to exhibit from an “on” state with semi-conducting phase to an “off” state with metallic phase. The optical switch performance is investigated, and testing results show that its extinction ratio is about 14 dB, its switching response time can achieve about 1.5 ms, and the power dissipation required for stimulating switching to work can be below about 15 mW at least, which is lower than the power dissipation of conventional optical switches based on microstructure thin vanadium dioxide (VO₂) films. This kind of optical switch is potential to be applied as optical switch for optical communication.     

Room-temperature ferromagnetism of Cu-doped ZnO films probed by soft X-ray magnetic circular dichroism

We report direct evidence of room-temperature ferromagnetic ordering in O-deficient ZnO:Cu films by using soft x-ray magnetic circular dichroism and x-ray absorption. Our measurements have revealed unambiguously two distinct features of Cu atoms associated with (i) magnetically ordered Cu ions present only in the oxygen-deficient samples and (ii) magnetically disordered regular Cu2+ ions present in all the samples. We find that a sufficient amount of both oxygen vacancies (V(O)) and Cu impurities is essential to the observed ferromagnetism, and a non-negligible portion of Cu impurities is uninvolved in the magnetic order. Based on first-principles calculations, we propose a microscopic "indirect double-exchange" model, in which alignments of localized large moments of Cu in the vicinity of the V(O) are mediated by the large-sized vacancy orbitals.     

Observation of a cyclotron harmonic spike in microwave-induced resistances in ultraclean GaAs/AlGaAs quantum wells

We report the observation of a colossal, narrow resistance peak that arises in ultraclean (mobility ～3×10? cm2/V s) GaAs/AlGaAs quantum wells (QWs) under millimeter wave irradiation and a weak magnetic field. Such a spike is superposed on the 2nd harmonic microwave-induced resistance oscillations (MIRO) but having an amplitude >300% of the MIRO, and a typical FWHM ～50 mK, comparable with the Landau level width. Systematic studies show a correlation between the spike and a pronounced negative magnetoresistance in these QWs, suggesting a mechanism based on the interplay of strong scatterers and smooth disorder. Alternatively, the spike may be interpreted as a manifestation of quantum interference between the quadrupole resonance and the higher-order cyclotron transition in well-separated Landau levels.     

Evidence for ψ' decays into γπ0 and γη

The decays ψ'→γπ(0), γη and γη' are studied using data collected with the BESIII detector at the BEPCII e(+)e(-) collider. The processes ψ'→γπ(0) and ψ'→γη are observed for the first time with signal significances of 4.6σ and 4.3σ, respectively. The branching fractions are determined to be B(ψ'→γπ(0))=(1.58±0.40±0.13)×10(-6), B(ψ'→γη)=(1.38±0.48±0.09)×10(-6), and B(ψ'→γη')=(126±3±8)×10(-6), where the first errors are statistical and the second ones systematic.     

Anisotropic defect reduction in non-polar a-plane GaN grown by hydride vapor phase epitaxy on maskless patterned templates

Several non-polar a-plane GaN films had been grown by hydride vapor phase epitaxy (HVPE) on different designed metal organic chemical deposition (MOCVD) GaN templates, which exhibited various ridge-like sidewall facets surface morphologies. The templates induced a lateral growth at the early stage of the HVPE growth, and resulted in a kind of maskless epitaxy lateral overgrown (ELO) process. It is found that the dislocation reduced differently along [1 0 0 0] and [] directions in these HVPE a-plane GaN layers. In [0 0 0 1] direction, the dislocation reduction resulted from the optimal surface roughness value of the template. In [] direction, the inclined facet might be a main factor for the dislocation reduction in HVPE-GaN films. The maskless ELO process had a significant influence on decreasing the dislocation density.