The problem of transport phenomena in polycrystalline semiconductor thin films with potential barriers in the case where the carriers gas degenerated

The character of the potential relief near crystallite boundaries, on which the surface states are localized for the polycrystalline films with degenerated current carriers gas was found. It was shown than in the case (?′-E_F)/E_F ? 1 the barriers on the crystallite boundaries can be approximated by rectangular barriers. In the scattering mechanism the carriers with Fermi energy on such rectangular barriers was grounded and film model allowing to calculate the energy dependence of relaxation time was suggested. Conductivity and thermoelectric coefficients were calculated. The developed theory explains the experimental results, observed in degenerated films of A^IVB^VI and A₂^VB₃^VI semiconductors. In particular, weakening of the dependence σ(T) in films and the effect of thermoelectric coefficients increasing in comparison with monocrystals at the same carrier concentration were explained.