Synthesis of P-type transparent conducting silver:indium oxide (AIO) thin films by reactive electron beam evaporation technique

Present paper reports the synthesis, electrical and optical properties of p-type conducting and transparent silver indium oxide (AIO) thin films prepared on glass substrates by reactive electron beam evaporation technique at three substrate temperatures (50, 200 and 250 °C) and at five evaporation rates (0.05 to 16.0 nm/s). The source material is pure powders of Ag₂O:In₂O₃=50:50 mol%. The AIO films are amorphous. The films, though not corresponding to Delafossite crystal structure, exhibit p-type conductivity, when prepared at an evaporation rate of 0.05 nm/s at all the three substrate temperatures. With increasing filament current, it is observed that (i) the electrical resistivity decreases and (ii) the refractive index of the films (at 632.8 nm, and is in the range: 1.219-1.211) decreases. The work function (effective Fermi level) has been measured on these samples by Kelvin Probe method. The results are explained on the basis of partial ionic charge and localization of covalent bonds in the AIO thin films.     

Structural and dielectric studies of lead-free ceramics: Na1/2Y1/2TiO3

The polycrystalline samples of Na_1/2Y_1/2TiO₃ were prepared by the mixed-oxide method. A preliminary X-ray structural analysis was shown to exhibit the formation of a single-phase compound with an orthorhombic structure. Microstructural analysis by scanning electron microscopy (SEM) exhibits well defined grains distributed uniformly through out the sample suggesting the compactness and homogeneity of the sample. Detailed studies of dielectric properties of Na_1/2Y_1/2TiO₃ in a wide frequency range (102–106 Hz) at different temperatures (31–500°C) show a dielectric anomaly at 105°C, which may be related to a ferroelectricparaelectric phase transition as suggested by hysteresis loop at room temperature. An ac conductivity (σ _ac) of the material is mainly governed by the polaron hopping mechanism, which is also influenced by both frequency and temperature. The activation energy was obtained from the plot of temperature with a.c. conductivity.      

Development of Divide‐and‐Conquer Density‐Functional Tight‐Binding Method for Theoretical Research on Li‐Ion Battery

The density‐functional tight‐binding (DFTB) method is one of the useful quantum chemical methods, which provides a good balance between accuracy and computational efficiency. In this account, we reviewed the basis of the DFTB method, the linear‐scaling divide‐and‐conquer (DC) technique, as well as the parameterization process. We also provide some refinement, modifications, and extension of the existing parameters that can be applicable for lithium‐ion battery systems. The diffusion constants of common electrolyte molecules and LiTFSA salt in solution have been estimated using DC‐DFTB molecular dynamics simulation with our new parameters. The resulting diffusion constants have good agreement to the experimental diffusion constants.     

Impedance spectroscopy study of Na<Subscript>1/2</Subscript>Sm<Subscript>1/2</Subscript>TiO<Subscript>3</Subscript> ceramic

Complex impedance analysis of a valence-compensated perovskite ceramic oxide Na_1/2Sm_1/2TiO₃, prepared by a mixed oxide (solid-state reaction) method, has been carried out. The formation of single-phase material was confirmed by X-ray diffraction studies, and it was found to be an orthorhombic phase at room temperature. In a scanning electron microscope, grains separated by well-defined boundaries are visible, which is in good agreement with that of impedance analysis. Alternating current impedance measurements were made over a wide temperature range (31–400 °C) in an air atmosphere. Complex impedance and modulus plots helped to separate out the contributions of grain and grain boundaries to the overall polarization or electrical behavior. The physical structure of the samples was visualized most prominently at higher temperatures (275 °C) from the Nyquist plots showing inter- and intragranular impedance present in the material. The frequency dependence of electrical data is also analyzed in the framework of the conductivity and modulus formalisms. The bulk resistance, evaluated from the impedance spectrum, was observed to decrease with rise in temperature, showing a typical negative temperature coefficient of resistance-type behavior like that of semiconductors. The modulus mechanism indicates the non-Debye type of conductivity relaxation in the materials, which is supported by the impedance data. PACS 77.22.Ch; 77.22.Ej; 77.22.Gm; 77.22.Jp; 77.84.Bw     

Quark-pion coupling constant in a chiral quark model

Incorporating chiral-symmetry to the potential model of quarks with confining potentialU(r)=1/2 (1 +γ°)ar ² with m _q =10 MeV anda=2.273 fm⁻³ that gives a reasonable quark-core contribution to μ _p , 〈r ² 〉 _p ^1/2 andg _A , the quark-pion coupling constant for quarks in a nucleon is estimated.G _qqπ ² /4π obtained between 0.4 and 0.5 is consistent with those extracted from experimental vector meson decay-width ratios by Suzuki and Bhaduri. The nucleon-pion coupling constantG _NNπ ² /4π comes out to be of the order of 13.1 in reasonable agreement with the experimental value.     

Quantum escape kinetics over a fluctuating barrier

The escape rate of a particle over a fluctuating barrier in a double-well potential exhibits resonance at an optimum value of correlation time of fluctuation. This has been shown to be important in several variants of kinetic model of chemical reactions. We extend the analysis of this phenomenon of resonant activation to quantum domain to show how quantization significantly enhances resonant activation at low temperature due to tunneling.