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11.
We present some algorithms related to rings of Ore polynomials (or, briefly, Ore rings) and describe a computer algebra library
for basic operations in an arbitrary Ore ring. The library can be used as a basis for various algorithms in Ore rings, in
particular, in differential, shift, and q-shift rings.
__________
Translated from Sovremennaya Matematika i Ee Prilozheniya (Contemporary Mathematics and Its Applications), Vol. 13, Algebra,
2004. 相似文献
12.
从现有的PCDFs分子的正辛醇 /水分配系数 (logKow)实验数据出发 ,建立定量结构 性质关系方程(QSPR) .采用G98W程序包中的PM3方法对 13 5个多氯代二苯并呋喃 (PCDFs)分子和二苯并呋喃进行了优化计算 ,作业命令为 #pPM3optfreqscf(conver =9) ,以计算所得的分子轨道能量、碳原子电荷作为PCDFs分子结构描述符 ,运用多元线性回归技术建立了PCDFs的logKow与分子结构描述符的四元方程 ,最优相关系数为 0 .95 0 7,标准偏差为 0 .173 7,经检验该模型的稳健性好 ,并对未有实验数据的 85个PCDFs的logKow进行预测 相似文献
13.
O. Perru F. Ibrahim O. Bajeat C. Bourgeois F. Clapier E. Cottereau C. Donzaud M. Ducourtieux S. Galès D. Guillemaud-Mueller C. Lau H. Lefort F. Le Blanc A. C. Mueller J. Obert N. Pauwels J. C. Potier F. Pougheon J. Proust B. Roussière J. Sauvage O. Sorlin D. Verney 《Physics of Atomic Nuclei》2003,66(8):1421-1427
The PARRNe facility has been used to produce neutron-rich isotopes 83,84Gaby the ISOL method. Their decay has been studied, and β-γ coincidence and γ-γ coincidence data were collected as a function of time. The first two excited levels in 83Ge and the first excited level in 84Ge have been measured for the first time. 相似文献
14.
15.
Jérôme Le NôtreAna Acosta Martinez Pierre H DixneufChristian Bruneau 《Tetrahedron》2003,59(47):9425-9432
Enyne rearrangement of silylated modified terpenoids has been used as the key step for the synthesis of new terpenes and terpenoids. The catalytic system generated in situ from [RuCl2(p-cymene]2, 1,3-bis(mesityl)imidazolinium chloride and cesium carbonate is able to perform the transformation of silylated 1,7-enynes into cyclic siloxanes. Selective cleavage of the silicon-carbon and silicon-oxygen bonds by simple reactions has been performed to afford new terpenes and terpenoids by formal addition of a C5 unit. 相似文献
16.
P. González D. Fernández J. Pou E. García J. Serra B. León M. Pérez-Amor T. Szörényi 《Applied Physics A: Materials Science & Processing》1993,57(2):181-185
A study of the gas-phase parameters involved in ArF laser induced chemical vapour deposition of silicon-oxide thin films is presented. A complete set of experiments has been performed showing the influence of the concentration of the precursor gases, N2O and SiH4, and their influence on total and partial pressures on film growth and properties. In this paper we demonstrate the ability of this LCVD method to deposit silicon oxide films of different compositions and densities by appropriate control of gas composition and total pressure. Moreover, a material specific calibration plot comprising data obtained using different preparation techniques is presented, allowing determination of the stoichiometry of SiO
x
films by using FTIR spectroscopy independently of the deposition method. For the range of processing conditions examined, the experimental results suggest that chemical processes governing deposition take place mainly in the gas phase. 相似文献
17.
Flowing and static gas-phase samples of HNO3 in O2 and N2 were analyzed by long-path ultraviolet/visible (UV/VIS) spectroscopy to reveal the presence of both NO2 and NO3, the concentrations of which were calculated using differential absorption cross sections. NO2 is produced predominantly by the heterogeneous decomposition of HNO3, whereas NO3 is generated in the gas phase by the thermal decomposition of N2O5, a product of the self-disproportionation of liquid HNO3. © 1993 John Wiley & Sons, Inc. 相似文献
18.
We consider an optimal growth (multi-sector) model with nonconvex technology. Using the Clarke results on generalized gradients, we prove that the value function has left and right derivatives with respect to the initial capital stock, without requiring supermodularity assumptions. 相似文献
19.
R. Grac M. Pugnet J.H. Collet B. Lambert C. De Matos H. L'Haridon A. Le Corre J.O. White 《Superlattices and Microstructures》1997,22(4):505-509
We report new results on the diffraction properties of photoinduced gratings in InGaAs/InGaAsP MQW structures. The original feature of this device is that the QWs are enclosed in an asymmetric Fabry–Perot microcavity in order to increase the diffraction efficiency. We observe oscillations in the diffraction efficiency due to resonant effects in the microcavity. The experimental spectra are compared with theory. Diffraction efficiency at 1.55 μm attains a maximum value of 2.7% at a write beam fluence of 260 μ J cm−2, and then decreases at higher fluences. We explain this phenomenon by an absorption saturation at high excitation. 相似文献
20.
Ralf Jäger Anatolij I. Saprykin J. Sabine Becker Hans -Joachim Dietze José A. C. Broekaert 《Mikrochimica acta》1997,125(1-4):41-44
The analytical capabilities of a high-resolution mass spectrometer in combination with a 13.56 MHz glow discharge ion source for the analysis of semiconducting materials (silicon carbide and gallium arsenide) were studied. It was shown that single positively charged ions of sample material have about 10 eV higher average energy than the ions of the discharge and residual gas. Therefore effective energy separation of the ions of analyte from the ions of the discharge and residual gas was achieved by adjusting the ion transfer optics (breadth and position of energy slit), which improves the analytical capabilities of the developed method.Some analytical applications are presented to illustrate the performance of r.f. GDMS for the bulk analysis of semiconducting materials. The results of the trace element analysis of gallium arsenide and silicon carbide samples are compared with data of independent methods (LIMS, ICP-AES, SIMS).Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthdayOn leave from the Institute of Inorganic Chemistry, 630090 Novosibirsk, Russia 相似文献