制备XS(X=Ca,Sr)的一种优化工艺

本文利用一种新的制备工艺进行了XS(X=Ca,Sr)基质发光材料的合成;利用X-射线衍射等手段进行了反应效率、产物纯度、化学稳定性和材料的结晶学参数等研究实验结果表明,该方法比目前广泛采用的工艺具备更多优点。     

磁镜装置中ECR等离子体硬X射线强度观测

本文描述用硬X射线针孔成象法测量简单磁镜装置中ECR等离子体辐射特性的方法及其结果。这种非破坏性的成象法,直接显示了热电子等离子体的空间分布,一次放电可成一帧清晰的象,且由此可得出二维的等发射强度线。大量结果表明电子环是非轴对称的,并非为一个整环,而是在微波注入口的对面有一个缺口。当微波功率改变时,环也在改变。     

腔靶等离子体辐射温度空间分布测量

本文描述了用膜吸收法测量激光等离子体辐射温度空间分布的原理和方法给出了柱形缝靶轴向辐射温度随空间位置变化的特征,对测量结果进行了分析讨论。     

重组家蚕核多角体病毒（rBmNPV）的复制及所载HuIFN－α基因的表达

报道了重组家蚕核多角体病毒（ＢｏｍｂｙｘｍｏｒｉｎｕｃｌｅａｒＰｏｌｙｈｅｄｒｏｓｉｓＶｉｒｕｓＢｍＮＰＶ）在家蚕细胞ＢｍＮ中复制的细胞病理学变化，除了不形成多角体以外，与野生型病毒相同．研究了病毒感染复数、细胞接种密度和细胞生长阶段对重组病毒复制和α－干扰素（ＩＦＮ－α）表达量的影响．在一定低感染复数时，α－干扰素的产量较高．对于重组病毒的复制，最适的细胞接种密度为３．６～７．０×１０５细胞／瓶．在细胞指数生长前期（４８～６０ｈ）接种重组病毒，对于获得较高的重组病毒复制效价和α－干扰素的产量都是有利的．     

基于经典控制理论的控制系统计算机辅助设计软件

频率法和根轨迹法是经典控制理论的两个基本的控制系统设计与分析方法。本文主要介绍的两个计算机辅助设计（ＣＡＤ）软件，分别建立在频率法和根轨迹法的基础上。通过这两个ＣＡＮ软件，可以根据给定的单输入单输出（ＳＩＳＯ）控制系统数学模型，进行各种计算，从而得到我们所需要的结果．     

用光谱学方法研究不同放电等离子体粒子约束

本文用光谱学方法研究在ＨＬ－１装置上ＬＨＣＤ及ＥＣＲＨ等离子体，弹丸注入等离子体，偏压电极与偏压孔栏等离子体粒子约束特性。结果表明：在弹丸注入使用正向偏压电极与偏压孔栏期间，等离子体粒子约束行到改善，较低密度下（＾ｎｅ＜２．０×１０＾１＾３ｃｍ＾－＾３），ＬＨＣＤ脉冲期间粒子约束得到改善；而当密度＾－ｎｅ大于２．０×１０＾１＾３ｃｍ＾－＾３时，等离子体约束变坏。ＥＣＲＨ脉冲期间粒子约束得不到改善。     

甲醇在γ-Al2O3,CeO2及其负载Pd催化剂上吸附和分解的原位红外光谱研究

利用原位傅里叶变换红外光谱 (FTIR)技术对甲醇在γ Al2 O3,CeO2 以及Pd/Al2 O3,Pd/CeO2 催化剂上的吸附和分解行为进行了研究。综合考虑了载体和活性组分的作用 ,分析了甲醇在不同载体负载Pd催化剂上可能的分解途径。在Pd/CeO2 催化剂上 ,活性组分和载体对甲醇分解的过程表现出了一种协同效应。     

Reflex optical sensor based on dual metal gratings with high angular sensitivity

An interesting reflection phenomenon in a dual metal grating (DMG) structure is studied, which is related to the competition between Fabry-Prot (F-P) resonance effect and evanescent-field coupling effect inside the gap between the two composing single metal gratings. This competition leads to high angular sensitivity in response to the refractive index variation of the sample solution in the gap. A reflex optical sensor with high sensitivity based on DMG for detecting the change in refractive index is proposed and its performance theoretically is discussed.     

Enhanced hardness in B-doped ZnO thin films on fused quartz substrates by pulsed-laser deposition

B-doped ZnO thin films have been fabricated on fused quartz substrates using boron-ZnO mosaic target by pulsed-laser deposition technique, and the mechanical properties have been studied by nanoindentation continuous stiffness measurement technique and transmission electron microscope (TEM). Nanoindentation measurement revealed that the hardness of B-doped ZnO films, 9.32 ± 0.90 to 12.10 ± 1.00 GPa, is much greater than that of undoped ZnO films and very close to that of traditional semiconductor Si. The mean transmittance (%) is larger than 81% in the visible range (380-780 nm) for all the films, and the Hall effect measurement showed that the carrier density is around 2 × 10²⁰ cm⁻³ and the resistivity lower than 3 × 10⁻³ Ω cm. TEM characteristics show undoped thin films have more amorphous area between grains while the B-doped ZnO films have thin grain boundaries. We suggest that the grain boundaries act as the strain compensation sites and the decrease in thickness of grain boundaries enhances the hardness of the B-doped ZnO films.