Increase of refractive index induced by absorbing centres

An analytical expression of the complex permittivity is derived for absorbing centres featuring inhomogeneous absorption-line broadening. Such an expression gives the dispersion law of the real part of the permittivity when the imaginary part has a Gaussian lineshape. Our mathematical approach starts from an overlap integral of Lorentzian-type dielectric susceptibilities weighted by a Gaussian probability distribution of the resonance absorption energies. The analytical solution found is consistent with the Kramers–Kronig relation. We demonstrate that, like in the case of homogeneous absorption-line broadening, the refractive index increases at photon energies lower than the resonance absorption energy also for inhomogeneous absorption-line broadening; if the absorbing centres emit Stokes-shifted radiation, such an increase can be exploited for passive and active waveguiding applications. An example is reported regarding active waveguides based on colour centres in a lithium fluoride crystal.     

纳米尺寸的ZnO晶体高压相变的拉曼散射研究(英文)

Weperformedthehigh-pressureRaman measurementofthethreenanosizedZnOcrystals. Wefoundthesmallerthesize,thehigherthe pressuretoinducethephasetransitionfrom w櫣rzitetorock-saltstructure. High-pressureRamanmeasurementsof nona-shapedZnOcrystalswerepreformed.The…     

Ultraviolet photoemission spectroscopy of hydrogen complex deactivation on InP:Zn(1 0 0) surfaces

Ultraviolet photoemission spectroscopy is used to study the kinetics of the H-Zn complex deactivation in Zn doped InP(1 0 0). Hydrogen injected into the material electronically passivates the local carrier concentration. Reverse-biased anneals of the InP under ultra-high vacuum show a dramatic change in the work function of the material with increasing temperature. Spectral features are also shown to be sensitive to sample temperature. To our knowledge, we show the first view of hydrogen retrapping at the surface using photoemission spectroscopy. A simple photoelectron threshold energy analysis shows the state of charge compensation of the material.     

Growth and characterisation of Eu doped GaN thin films

We have studied the optical properties of Eu doped GaN thin films. We have grown high quality Eu doped GaN thin films by using Gas Source Molecular Beam Epitaxy (GSMBE), with 1.4% Eu concentration. The Full Width at Half Maximum (FWHM) of the X-ray diffraction in an omega scan was found to be 288 arcsecs. Low Eu concentration (0.08%) doped GaN thin films were grown, where Eu-related photoluminescence at 622 and 613 nm was detected using above band-gap excitation at 2 K. For high Eu concentration of 30% GaN:Eu crystal photoluminescence (PL) and cathodoluminescence (CL) spectra show strong and intense transitions at 622 and 664 nm, but also at 593 nm for CL spectra, with a similar transition observed from the low Eu concentration sample.     

Evidence of shear-dependent boundary slip in newtonian liquids

The European Physical Journal E - The flow of Newtonian fluids was studied by directly measuring the hydrodynamic drainage force acting on a sphere approaching a flat surface. Our force...     

High pressure elastic and plastic deformations of silica: In situ diamond anvil cell Raman experiments

Normal silica glass is usually referred to as low density amorphous silica as it can be converted to high density amorphous silica by a hydrostatic pressure (polyamorphic transition). In this work in situ Raman experiments are performed in a diamond anvil cell up to 18 GPa. The pressure effects on the structure of silica after successive compression decompression experiments are analyzed. The mode Grüneisen parameters corresponding to the elastic compression of high density amorphous silica are obtained and compared with those of normal silica. A reorganization of the high density amorphous silica below 3 GPa is evidenced.     

Dense amorphous packing of binary hard sphere mixtures with chemical order: The stability of a solute ordered approximant

Recently, Miracle proposed that the intermediate structure in metallic glasses could be usefully characterized as an ordered face centered cubic packing of solute-centered coordination clusters. In this paper we examine the stability of such solute ordered arrangements in binary hard sphere mixtures subject to density maximization through local particle moves.     

Fluorine incorporation in silica glass by the MCVD process: Study of fluorine incorporation zone,evaluation of optical properties and structure of the glass

A theoretical approach was made to find out a complete fluorine incorporation zone on a ternary diagram which serves as a useful graphical representation to select the flows of the supplied reagents for incorporation of the suitable amount of fluorine into cladding glass of optical fiber preform made by the MCVD process using CCl₂F₂ as a source of fluorine under oxygen abundance, oxygen deficiency and intermediate oxygen state conditions. The possible mechanism for incorporation of fluorine into cladding glass of optical fiber is also evaluated on the basis of the thermodynamical data. The fluorine incorporation mechanism in silica glass by the MCVD process is found to be dependent on the CCl₂F₂/SiCl₄ ratio in the input gas mixture. Fluorine doping is found to be effective for removing the strained Si–O–Si bonds, which govern the optical transparency in deep ultra-violet (DUV) and vacuum ultra-violet (VUV) regions. The maximum refractive index depression of ?0.5 × 10^?3 is obtained with incorporation of fluorine into silica cladding glass by the MCVD process using CCl₂F₂ as a dopant precursor with suitable flow of SiCl₄ vapor along with O₂ through backward deposition pass. The structure of fluorine doped silica glass preform samples containing 1.70–1.79 mol% fluorine incorporated by the MCVD process based on the analyses of ¹⁹F MAS spectra done by high-resolution ¹⁹F NMR spectroscopy reveal the presence of two distinct types of fluorine environments. The majority of the fluorine environments are formed in SiO_1.5F polyhedral and less abundant species is observed to be highly unusual, yielding a fivefold coordinated silicon of the type SiO₂F polyhedral which become increased with increasing the fluorine content.     

A semi-analytic meshfree method for Almansi–Michell problems of piezoelectric cylinders

Saint-Venant’s Problem, Almansi–Michell Problems, Meshfree Methods, Piezoelectricity. We present a semi-analytical method for analyzing prismatic nonhomogeneous piezoelectric cylinders with arbitrary cross-sectional geometry. The prescribed loads considered in this study include axial forces, torques, moments, and voltage resultants prescribed at the cylinder’s ends, as well as body forces, lateral surface shears, voltages, and pressures as long as they can be represented by a power series in the axial coordinate. This problem can be considered as an extension of Saint-Venant and Almansi–Michell problems for elastic bodies to piezoelectric bodies. In this computationally efficient method, the cross-sectional plane is discretized with a meshfree approach, and the solution is obtained analytically with respect to the axial coordinate. A number of examples are provided to demonstrate the veracity and utility of the proposed method.