The accurate dimensional measurements within small internal structures

This paper shows that the dimension of internal structure of a component can be measured remotely to a resolution better than 5 μm by use of the combination of high resolution optical microscopy and image processing.A specialised high resolution, long working distance and diffraction limited lens was used to image within the component. A series of digital images were made to map spatially the interior of the component. An edge detector was then used to localise the specific location of features in order that an accurate internal measurement could be made. A visualisation of the internal surface finish was also achieved.     

Analytic solutions of the Schrödinger equation for the modified quartic oscillator

No analytic solutions of the Schrödinger equation are known for the quartic anharmonic oscillator. We show in this paper that there are closely related modified quartic oscillators with the potential depending on |x| for which analytic solutions for some states exist. These results can be extended to the higher order oscillators     

Resonance enhancement of diffuse scattering of x-rays in a waveguide heterostructure

The diffuse scattering of x rays in a four-layer waveguide-type heterostructure is investigated. The dynamic enhancement of diffuse scattering is detected experimentally in regions corresponding to the excitation of waveguide modes for both the incident and scattered waves. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 4, 219–223 (25 August 1997)     

Phase shift moiré studies of processing-induced residual strains in Nickel 200 spot welds

Processing-induced residual strains in solid cylinders of Nickel 200 were investigated using phase shifting moiré interferometry. Two different experimental approaches were used to study the strains produced during Tungsten-inert gas spot welding. A comparison of results for a ‘hot/fast’ and a ‘cool/slow’ weld demonstrate the capabilities of the general approach. Both experimental methods revealed distinct differences in the residual displacement and strain fields between the two types of welds.     

On the connectedness of numerical range of matrix polynomials

An investigation on nonconnectedness of numerical range for monic matrix polynomials L(λ) is undertaking here. The distribution of eigenvalues of L(λ) to the components of numerical range and some other algebraic properties are also presented.     

Recombination of Au25+ with free electrons at low energies

The origin of the widely observed enhancement of rates for electron-ion recombination at very low energies is still unknown. We investigated the recombination of Au²⁵⁺ with free electrons in a merged-beams experiment at the UNILAC accelerator of the GSI in Darmstadt. At E _rel= 0 eV we found an enormous enhancement factor of 365 compared to the theory of radiative recombination. An increase of the electron density by a factor of 10 had not much influence on the measured rate coefficient. This revised version was published online in July 2006 with corrections to the Cover Date.     

Coherent States and Number-Phase Uncertainty Relations

The number-phase uncertainty relations arerevisited in view of the recent discovery of a propercovariant phase observable. The high-amplitude limits ofthe coherent-state expectations of the moment operators of the phase observable are determined and thebehavior of the number-phase uncertainty product in thatlimit is investigated.     

Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ − SR method

The residual polarization of negative muons in crystal silicon samples with phosphorus (P: 1.6×10¹³ cm⁻³) and antimony (Sb: 2×10¹⁸ cm⁻³) impurities is investigated. The measurements are made in a 1000 G magnetic field oriented in a direction transverse to the muon spin in the temperature range 4–300 K. The relaxation rate and shift of the precession frequency in the silicon sample with the phosphorus impurity are measured more accurately than previously. It is found that in antimony-doped silicon the acceptor center _μ A1 at temperatures below 30 K can be in both ionized and neutral states. The experimental data are interpreted on the basis of spin-lattice relaxation of the magnetic moment of an acceptor center, formation of acceptor-donor pairs, and recombination of charge carriers at the acceptor. Preliminary measurements showed a nonzero residual polarization of negative muons in germanium. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 61–66 (10 July 1998)