整体毛细管X光透镜在大气颗粒物单颗粒分析中的应用

对大气颗粒物进行单颗粒X射线荧光(XRF)分析,是一种识别大气颗粒物来源的有力手段.为了利用实验室X射线光源对大气颗粒物进行单颗粒XRF分析,建立了基于整体毛细管X光透镜和实验室X射线光源的微束X射线谱仪.透镜焦斑处的功率密度增益在103数量级,焦斑直径为30 μm左右.该微束X射线谱仪对Fe-Kα线的最小探测极限为0.7 Pg.在Mo靶光源电压和电流分别为30 kV和50 mA的条件下,利用该谱仪对直径为9 μm的大气颗粒物单颗粒进行XRF分析时,测谱时间在180 s左右.实验表明,基于毛细管X光透镜和实验室X射线光源的微束X射线分析技术在大气颗粒物单颗粒分析中有着潜在的应用价值.     

渤海近岸水体后向散射系数反演模型

水体后向散射系数bb是重要的海洋光学参数,在以悬浮物为主要组分的浑浊二类水体中,其对于水体光学性质起着决定性的作用,该参数的遥感反演对于海洋光学与水色遥感研究具有重要意义.利用2005年渤海近岸水体实测数据集,建立了基于水体遥感反射率光谱数据的后向散射系数bb(λ)经验反演模型(λ=442 nm,488 nm,532 nm,589 nm,676 nm),经实测数据检验,bb(442)和bb(589)反演平均相对误差约为30%;bb(488)和bb(676)反演半均相对误差优于40%;bb(532)反演半均相埘误差约为57%.通过分析模型对于输入误差的敏感性发现,当输入端引入±5%的误差时,模型反演值的误差波动在绝大多数情形下可控制在±10%以内,模型足稳定可靠的.模型适用于渤海近岸浑浊水体,可用丁水体光学参数的时空分布特征分析以及基丁固有光学参数的水色组分遥感反演.     

制冰方式的研究

文中提出一种新型的浸润式动态制冰方式,并利用数值模拟的方法对新型制冰方式和传统滑落式制冰方式进行了对比研究。结果表明,在制冰时间相等的条件下,新型制冰方式的制冰量提高了约19%。在制冰量相等的条件下,制冰周期平均缩短了10分钟,蓄冰周期平均缩短了约2.3小时。此外,新型制冰机组采用的脱冰方式可以减小冷凝器的换热面积。     

Mg2Sn电子结构及热力学性质的第一性原理计算

采用基于第一性原理的赝势平面波方法系统地计算了Mg2Sn基态的电子结构、弹性常数和热力学性质.计算结果表明Mg2Sn的禁带宽度为0.1198eV.运用线性响应方法确定了声子色散关系和态密度,得出Mg2Sn的热力学性质如等容比热和德拜温度.计算Mg2Sn的热导率并与实验数据相比较.     

Tm:Ho co-doped single mode optical fibre laser pumped by a 1600 nm Er fibre laser

An all-fibre Tm:Ho laser system is reported, using a 1600 nm Er fibre pump laser and 0.3 m length of the fibre through a two-stage optimization of both the pump source and laser configuration to achieve a low threshold operation. As a result a low threshold power of 33 mW and a slope efficiency of 0.6% have been achieved, in laser operation at a wavelength of 1870 nm and a cross-comparison with 785 nm laser diode pumping has been made.     

Nonlinear optical properties of Au/ZnO nanoparticle arrays

The triangular-shaped Au/ZnO nanoparticle arrays were fabricated on fused quartz substrate using nanosphere lithography. The structural characterization of the Au/ZnO nanoparticle arrays was investigated by atomic force microscopy. The absorption peak due to the surface plasmon resonance of Au particles at the wavelength of about 570 nm was observed. The nonlinear optical properties of the nanoparticle arrays were measured using the z-scan method at a wavelength of 532 nm with pulse duration of 10 ns. The real and imaginary part of third-order nonlinear optical susceptibility, Re χ⁽³⁾ and Im χ⁽³⁾, were determined to be 1.15 × 10⁻⁶ and −5.36 × 10⁻⁷ esu, respectively. The results show that the Au/ZnO nanoparticle arrays have great potential for future optical devices.     

Effect of surface modification by thermally oxidization and HF etching on UV photoluminescence emission of porous silicon

Photoluminescence of porous silicon (PS) is instable due perhaps to the nanostructure modification in air. The controllable structure modification processes on the as-prepared PS were conducted by thermal oxidization and/or HF etching. The PL spectra taken from thermally oxidized PS showed a stable photoluminescence emission of 355 nm. The photoluminescence emission taken from both of PS and oxidized porous silicon (OPS) samples etched with HF were instable, which can be reversibly recovered by the HF etching procedure. The mechanism of UV photoluminescence is discussed and attributed to the transformation of luminescence centers from oxygen deficient defects to the oxygen excess defects in the thermal oxidized PS sample and surface absorbed silanol groups on PS samples during the chemical etched procedure.     

Structure and micro-mechanical properties of helium-implanted layer on Ti by plasma-based ion implantation

The present paper concentrates on structure and micro-mechanical properties of the helium-implanted layer on titanium treated by plasma-based ion implantation with a pulsed voltage of −30 kV and doses of 3, 6, 9 and 12 × 10¹⁷ ions/cm², respectively. X-ray photoelectron spectroscopy and transmission electron microscopy are employed to characterize the structure of the implanted layer. The hardnesses at different depths of the layer were measured by nano-indentation. We found that helium ion implantation into titanium leads to the formation of bubbles with a diameter from a few to more than 10 nm and the bubble size increases with the increase of dose. The primary existing form of Ti is amorphous in the implanted layer. Helium implantation also enhances the ingress of O, C and N and stimulates the formations of TiO₂, Ti₂O₃, TiO, TiC and TiN in the near surface layer. And the amount of the ingressed oxygen is obviously higher than those of nitrogen and carbon due to its higher activity. At the near surface layer, the hardnesses of all implanted samples increases remarkably comparing with untreated one and the maximum hardness has an increase by a factor of up to 3.7. For the samples implanted with higher doses of 6, 9 and 12 × 10¹⁷ He/cm², the local displacement bursts are clearly found in the load-displacement curves. For the samples implanted with a lower dose of 3 × 10¹⁷ He/cm², there is no obvious displacement burst found. Furthermore, the burst width increases with the increase of the dose.     

Fabrication of microelectrodes deeply embedded in LiNbO3 using a femtosecond laser

We present a novel technique to fabricate deeply embedded microelectrodes in LiNbO₃ using femtosecond pulsed laser ablation and selective electroless plating. The fabrication process mainly consists of four steps, which are (1) micromachining of microgrooves on the surface of LiNbO₃ by femtosecond laser ablation; (2) formation of AgNO₃ films on substrates; (3) scanning the femtosecond laser beam in the fabricated microgrooves for modification of the inner surfaces; and (4) electroless copper plating. The void-free electroless copper plating is obtained with appropriate cross section of microgrooves and uniform initiation of the autocatalytic deposition on the inner surface of grooves. The dimension and shape of the microelectrodes could be accurately controlled by changing the conditions of femtosecond laser ablation, which in turn can control the distribution of electric field inside LiNbO₃ crystal for various applications, opening up a new approach to fabricate three-dimensional integrated electro-optic devices.