基于ANSYS的芯片冷却器传热分析

针对微槽式芯片冷却器,建立三维仿真模型,分析其稳态工况下的传热情况,获得其温度和热应力分布.分析了五种不同结构形式芯片冷却器工作性能的影响,比较了纯铜和氮化硅复合物两种材质对散热性能的影响.结果表明,铜质冷却器散热性能较好,但内部热应力却高于复合材质冷却器.通过将原冷却通道分割成两个相同的小通道,可提高冷却性能,且应将...     

Continuous-wave fiber cavity ring-down measurements using frequency-shifted interferometry

We present a spatial-domain fiber cavity ring-down (CRD) technique that does not require optical pulses for time-resolved detection. Instead of measuring the intensity decay rate of an optical pulse in the time domain as in conventional CRD experiments, we measure the decay rate of a CW signal in a ring-down cavity (RDC) using frequency-shifted interferometry in the spatial domain, as a function of distance traveled by the light. As a proof-of-concept demonstration, we measured fiber bend loss in a loop RDC using this technique, and a cavity loss change as low as 0.0135 dB induced by every fiber turn on a mandrel was unambiguously discerned.     

Stability of trapped Bose-Einstein condensates in one-dimensional tilted optical lattice potential

Using the direct perturbation technique,this paper obtains a general perturbed solution of the Bose-Einstein condensates trapped in one-dimensional tilted optical lattice potential. We also gave out two necessary and sufficient conditions for boundedness of the perturbed solution. Theoretical analytical results and the corresponding numerical results show that the perturbed solution of the Bose-Einstein condensate system is unbounded in general and indicate that the Bose-Einstein condensates are Lyapunov-unstable. However,when the conditions for boundedness of the perturbed solution are satisfied,then the Bose-Einstein condensates are Lyapunov-stable.     

Effect of the thickness of InGaN interlayer on a-plane GaN epilayer

In this paper,we use the a-plane InGaN interlayer to improve the property of a-plane GaN.Based on the a-InGaN interlayer,a template exhibits that a regular,porous structure,which acts as a compliant effect,can be obtained to release the strain caused by the lattice and thermal mismatch between a-GaN and r-sapphire.We find that the thickness of InGaN has a great influence on the growth of a-GaN.The surface morphology and crystalline quality both are first improved and then deteriorated with increasing the thickness of the InGaN interlayer.When the InGaN thickness exceeds a critical point,the a-GaN epilayer peels off in the process of cooling down to room temperature.This is an attractive way of lifting off a-GaN films from the sapphire substrate.     

Geometric and electronic structure of positively and negatively poled LiNbO3 (0 0 0 1) surfaces

The effect of ferroelectric poling direction on the structure and electronic properties of the LiNbO₃ (0 0 0 1) surface was characterized. Low energy and reflection high energy electron diffraction indicated that both the positively and negatively poled surfaces were (1 × 1) with no evidence of longer range periodic reconstructions. Low energy ion scattering spectra from both surfaces were dominated by scattering from oxygen atoms. X-ray and ultraviolet photoelectron spectra also showed little difference between the positively and negatively poled surfaces, with the exception of a high binding energy shoulder on the O 1s core level of the negative surface. Exposure of the surfaces to atomic hydrogen caused reduction of the surface Nb rather than an increase in intensity on the high binding energy side of the O 1s peak, indicating that the shoulder on the O 1s peak on the negative surface was not due to surface hydroxyl groups. Temperature programmed desorption measurements indicated that the nearly stoichiometric LiNbO₃ samples were susceptible to loss of Li₂O starting at temperatures as low as 500 K, independent of the poling direction. An adatom/vacancy model is proposed in which oxygen ad-anions accumulate on one side of the crystal while oxygen anion vacancies are created on the opposite surface. This model can explain the apparent oxygen termination of both surfaces and the observed (1 × 1) periodicity of the surfaces, and also effectively screens the thickness dependent electric field associated with the polar orientation of the crystal.     

Generalized optical logic elements - GOLEs

A Generalized Optical Logic Element or GOLE is device that performs any of the 16 Boolean logic operations on signals in an optical beam with very fast switching among functions. The advantages of a generalized or universal gate in manufacturing are obvious. Extremely flexible functioning becomes possible if the GOLE functionality is switched in response to earlier computations. Likewise Field Programmable Gate Arrays or FPGAs can be used to fix the GOLE functions, making one of the most powerful and flexible processor units ever designed - called a Field GOLE. Such systems can be made in bulk optics to utilize Spatial Light Modulator or SLM capabilities, but integrated optics on silicon will be the choice for most applications. GOLEs can be generalized in several ways to become Fredkin gates and generalized Fredkin gates. They can also be cascaded similarly to electronic gates.     

三线摆实验中摆角偏大产生的误差及修正方法

研究了三线摆实验中摆角偏大(5°θ20°)时对测量转动惯量产生的误差和修正办法。实验发现随着摆角的增大,测得的圆盘转动惯量也会相应偏大,从而导致测量误差增大。文章通过进一步的理论分析解释了这一现象,并对测量结果进行了系统误差修正。     

基于单片机的电缆导通测试方法 

文章介绍了一种基于单片机的电缆导通测试方法。该方法以小型化、智能化为目标,采用了嵌入式设计,不仅使测试系统的体积大幅度降低,而且使操作界面更加简洁方便;系统采用C8051F120单片机做为核心控制器,以及技术成熟的万用表作为测量模块;通过设计接口电路,实现了单片机与液晶显示模块、微型打印机模块和键盘模块的互通;通过使用移位寄存器和继电器阵列,系统也实现了多个通道间的切换;系统用单片机驱动外部测量模块,完成了某型伺服系统电缆束的导通、不导通的测试;该测试方法改变了一直以来电缆导通测试需要依赖人工手动测试的现状,同时提高了测试的效率和准确性。