多量子位Heisenberg XX链中的杂质纠缠

通过分析系统的杂质位与其余部分间的纠缠N_1-A以及单个正常位与其余部分间的纠缠N_L-A研究了匀强磁场作用下含杂质Heisenberg XX链的纠缠特性.研究表明三量子位时纠缠存在的临界温度依赖于杂质参数J₁和匀强磁场B.研究发现,当量子位L为奇数时,纠缠N_1-A随量子位的增加而增大,而L为偶数时则相反,并且量子位L为偶数时的纠缠大于量子位L为奇数时的纠缠;对N_L-A, 量子位L为奇数时,纠缠随杂质参数J₁的变化与L=3类似,而L为偶数时纠缠随杂质参数|J₁|的增加而增加.     

Fiber-optic sensor based on evanescent wave absorbance around 2.7 μm for determining water content in polar organic solvents

The feasibility of sapphire fiber-optic sensors based on evanescent wave absorption spectroscopy in the infrared range for quantitative determination of water content in polar organic solvents has been investigated. Evanescent wave absorption spectra of sapphire fiber-optic sensors in glycerol, ethanol, and glycol with different water concentrations obtained and analyzed, respectively. Evanescent absorbance of the sensors in those organic solvents has been utilized to implement for in situ monitoring water concentration in organic solvents. The evanescent absorbance of sensors in glycerol and glycol has been found to vary linearly with water content in the range 0–30 % and in ethanol in the range 0–10 %, respectively. The fiber-optic sensors based on evanescent absorbance for monitoring water concentrations in those organic solvents are acceptably accurate, cost-effective, and reliable. Some methods to improve the accuracy of predicated water content in those organic solvents are also suggested. Overall, the results demonstrate that the sapphire fiber-optic sensor based on evanescent absorption spectroscopy is a promising candidate for prediction of water content in polar organic solvents in on-line and remote situation.     

Theoretical and experimental study of laser induced damage on GaAs by nanosecond pulsed irradiation

The surface damage experiments of gallium arsenide (GaAs) single crystal irradiated by 1.06 and 0.53 μm nanosecond irradiations are carried out with fundamental and frequency-doubled Nd:YAG laser, respectively. The surface damage thresholds for both wavelengths are experimentally determined and the damaged morphologies and elementary component are analyzed with electron probe microanalyzer (EPM). It is found that the components of Ga and As almost keep constant in our experiments when the irradiated fluence is just around the surface damage threshold and no oxygen is found at all. The theoretical calculations on temperature rise for both wavelengths are carried out using the purely thermal model. It is shown that for irradiation with photon energy above the corresponding band gap the theoretical calculation is in good agreement with the experimental results; however, for that with photon energy just below the band gap, the experimental results cannot be effectively explained by the purely thermal heating mechanism. Combining with the experiment of multi-shot damage from references we finally conclude that the damage by laser irradiation with photon energy below the band gap should be explained by the micro-defect accumulation and consequently enhanced absorption heating mechanism.     

基于微扫描镜的激光投影

利用微机械加工技术制造出一种新型微扫描镜,结合半导体激光器,可用于投影显示.激光器发出的光束被两个分别沿着X轴、Y轴扭转的镜面相继反射,扫描出二维图形.实验测得扫描镜在15 V电压,频率为扫描镜谐振频率2倍的方波信号驱动下,镜子的光学扫描角度达±12°.由于每个镜子都沿各自轴以简谐规律扭转,扫描所得投影为李萨如图形.通过分析图形的形成原理并用Matlab仿真,选出了适用用于任意图案显示的扫描镜谐振频率组合(X轴2 400 Hz, Y轴2 425 Hz).该组合可以形成194×192个像素点,刷新频率为25 Hz.在此基础上提出了一种通过调制激光开关来进行投影显示的方法.     

High-efficiency resonantly pumped room temperature Ho:YVO4 laser

An efficient 2 μm room temperature Ho:YVO(4) laser resonantly pumped by a 1.94 μm Tm:YAP laser is demonstrated, for the first time to our knowledge, in this Letter. Up to 8.58 W of laser output at 2053 nm is obtained with the optical-to-optical conversion efficiency as much as 41.2%. The output beam had quality of M² factor with Mx(2) of 3.58 and My(2) of 1.76 at 8 W output level. In addition, we also obtained 4.18 W laser output at 2066 nm and 7.04 W at 2040 nm from the Ho:YVO(4) laser with conversion efficiency of 27.8% and 33.8%, respectively.     

Accurate method for measuring the thermal coefficient of group birefringence of polarization-maintaining fibers

We present a method to accurately measure the group birefringence variation with temperature in high-birefringence polarization-maintaining (PM) fibers using a distributed polarization analyzer. By analyzing polarization cross-talk peaks purposely induced at both ends of a PM fiber, the temperature coefficient of group birefringence can be accurately obtained. We confirm the theoretical prediction that the group birefringence of PANDA and TIGER PM fibers decrease linearly with temperature from -40 °C to 80 °C, and find that the temperature coefficients are -5.93 × 10(-7) °C(-1) and -5.29 × 10(-7) °C(-1) for two types of PANDA fibers, and -5.36 × 10(-7) °C(-1) for a TIGER fiber.     

Lateral cavity photonic crystal surface-emitting laser with ultralow threshold

A lateral cavity photonic crystal (PhC) surface-emitting laser is realized on a commercial epitaxial waveguide wafer without a distributed Bragg reflector first. Energy is coupled from the lateral resonance to surface-emitting light through the Γ band edge of the PhC with a square lattice. Electrically driven 1553.8?nm surface-emitting lasing action is observed at room temperature. The threshold current density of 667?A/cm2 is ultralow for the surface-emitting laser.     

电磁波在大面积等离子体片中传播特性的分析

脉冲磁约束线形空心阴极放电形成的大面积等离子体片可应用于等离子体天线、隐身及模拟超音速飞行器表面的等离子体鞘套. 本文首次利用实测等离子体片电子密度时空分布和横向场传播矩阵法, 研究了电磁波在等离子体片中反射率、透射率、吸收率随频率及脉冲放电时间的变化特征. 结果表明: 极化方向平行磁场的电磁波, 在小于截止频率的低频带内具有较高的反射率和吸收率, 增大电流, 反射率增加, 吸收率下降, 在大于截止频率的高频带内反射率和吸收率较低, 增大电流, 透射率下降, 吸收率升高; 极化方向垂直磁场的电磁波在高混杂谐振频率附近存在吸收率明显增强的吸收带, 谐振吸收峰值与放电电流无关; 脉冲放电期间, 电磁波的反射率、透射率与吸收率由不稳定过渡到稳定的时间约为100 μs, 过渡时间随着放电电流的增加而增大, 极化方向垂直磁场、小于截止频率的电磁波在稳定放电阶段谐振吸收较强. 本文的研究成果对利用等离子体片实现对电磁波的稳定高反射作用具有重要意义.     

丰质子核反应中轻带电粒子发射的同位旋效应

采用同位旋相关的Boltzmann—Langevin方程计算了核素^12-15N和^17-20Ne反应中轻带电粒子发射的同位旋效应。^12-15N与^28Si靶的反应结果显示轻带电粒子的产生截面有明显的同位旋效应,^12N的轻带电粒子产生截面突然增大,与实验得出的结论相同,由此检验了所采用的计算方法的可行性。同时还计算了^17-20Ne与^9Be靶的反应,发现^17Ne的轻带电粒子产生截面也是突然增大,并且其质子分布有较大的弥散,据此认为^17Ne可能具有晕结构。 Within the Boltzmann-Langevin equation, the isospin effects on the production cross sections of light charged particles （LCP） in the reaction of proton rich nuclei were studied. We have calculated the LCP productio n cross sections of the reaction ^12-15N ＋ ^28Si at 55 MeV/u and ^17-20Ne ＋ ^9Be at 60 MeV/u. The LCP production cross sections of ^12N increase abnormally in comparison with those of ^13-15N. The result accorded with experimental one. It also happened to ^17-20Ne. It suggests that ^17Ne is probably a proton halo nucleus.