Effect of Xe ion irration of Fe/Sn bilayers

Films of Fe (20 nm) and Sn (40 nm) have been deposited by PVD onto Al supports and irradiated with 100 keV Xe ions at a dose of 5×10¹⁵ ions/cm². Scanning electron microscopy (SEM) shows that the irregular morphology of deposited Sn is considerably flattened by irradiation, which produces also a noticeable sputtering of Sn. Conversion electron Mössbauer spectroscopy (CEMS) reveals the formation at the interface of a variety of intermetallic phases which is enhanced by irradiation. These phases, seem to be insensible to prolonged (several months) room temperature aging. Their thermal stability under annealing at temperature up to 523 K has also been investigated.     

Breit-Wigner formulas for the scattering phase and the total scattering cross-section in the semi-classical limit

In this paper we prove results in resonance scattering for the Schrödinger operatorP _v=–h ²+V, V being a smooth, short range potential onR ⁿ . More precisely, for energy near a trapping energy level ₀ for the classical system defined by the Hamiltonianp(x,)= ²+V(x), we prove that the scattering phase and the scattering cross sections associated to (P _v, P₀) have the Breit-Wigner form (Lorentzian line shape) in the limith0.     

Frequency stability of an optically pumped cesium beam frequency standard

Results obtained in an experimental optically pumped cesium beam frequency standard in which a single semiconductor laser is used for the state selection and the atom detection are reported. The separation between the two interaction regions is equal to 21 cm. This gives a 500 Hz linewidth which is observed with a signal to noise ratio equal to 10,000 in a 1 Hz noise bandwidth. A quartz crystal oscillator is frequency controlled by the atomic transition. The measured short term frequency stability is given by _y()=2×10^–12–1/2 for 1 s<500 s. Prospects for improvement of this frequency stability are discussed.     

Preparation and electrochemical behavior of ordered rh adlayers on Pt(100) electrodes

Rhodium adlayers on Pt(100) substrates have been prepared by electrodeposition from dilute Rh(III) acidic solutions. The initially disordered layer is electrochemically annealed by applying a polarization program consisting of high-sweep-rate multicycle sequences between 0.05 and 0.78 V(RHE) in 0.1 M H(2)SO(4). In this way, a pseudomorphic Rh monolayer can be prepared on Pt(100) substrates. The degree of order of the electrochemically annealed layer has been evidenced not only through voltammetric experiments but also by means of scanning tunneling microscopy with atomic resolution for iodine-protected adlayers, which show a c(2 x 2) structure. The electrochemically induced ordering of the Rh adlayer appears to be a consequence of the repeated cycles of adsorption/desorption of H and, especially, oxygenated species. Voltammetry in sulfuric acid solutions permits examination of the energetics of H/anions and OH/O adsorption as a function of the Rh coverage. The first monolayer adsorbs both hydrogen and oxygenated species more strongly than the second one. This can be explained through an electronic effect caused by the underlying Pt(100) substrate.