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81.
The universal condition for the formation of omnidirectional band gaps (OBG) in photonic crystal (PC) was derived with consideration
of permeability of the materials. And it was found that there are four kinds of PCs: one of them has no OBG, and one always
possesses OBG. For the other two kinds of PCs, there are OBG for only TM or TE waves respectively. Moreover, in all PCs, the
OBG can be broadened by decreasing the refractive index of the ambient medium or/and increasing the contrast between the wave
impedances of the component materials of the PC.
PACS 42.70.Qs; 71.20.Tx 相似文献
82.
83.
This paper proposes the Rice condition numbers for invariant subspace, singular sub-spaces of a matrix and deflating subspaces of a regular matrix pair. The first-order perturbation estimations for these subspaces are derived by applying perturbation expansions of orthogonal projection operators. 相似文献
84.
对于任意秩有限总体,在二次损失下,有关文献已给出了线性可预测变量在齐次线性预测类中的唯一线性Minimax预测.本文在正态假设下,证明了这个线性Minimax预测也是线性可预测变量在一切预测类中的唯一Minimax预测. 相似文献
85.
In this paper, the relation between synchronization and pattern formation in one-dimensional discrete and continuous open flow models is investigated in detail. Firstly a sufficient condition for globally asymptotical stability of lag/anticipating synchronization among lattices of these models is proved by analytic method. Then, by analyzing and simulating lag/anticipating synchronization in discrete case, three kinds of pattern of wave (it is called wave pattern) travelling in the lattices are discovered. Finally, a proper definition for these kinds of pattern is proposed. 相似文献
86.
In situ flying height testing technology is becoming more and more important in slider–disk interaction analysis and manufacturing quality control of disk drives and head-related components. Triple harmonic method is a quite promising choice for in situ flying height analysis, compared with other in situ methods reported up to now. This paper reports results of investigations on engineering issues of applying triple harmonic method for in situ flying height analysis. The paper reports results of analysis on the effects of various testing conditions on flying height testing repeatability and accuracy. Results suggest that working at reasonable high channel density and working on the ratio between third and first harmonics will be an advantage in terms of both flying height testing sensitivity and testing repeatability. Comparing with media thickness effect, the gap-length variation among different heads will be important if it is to study flying height difference among different heads and the testing is at high channel density. Also, it is suggested to work at AC erased track, in order to reduce the non-linearity caused by hard transition. 相似文献
87.
88.
Summary High-purity indium was analysed by spark source mass spectrometry, using electrical and photoplate detection. For the calibration of the differences in elemental sensitivity, a standard sample was prepared in which 10 impurities were determined by graphite furnace atomic absorption spectrometry. In this way accuracies of less than 40% were obtained for relatively homogeneous elements at ppm and sub-ppm level. About 40 elements could be determined with detection limits of 10 to 30 ppb. Two pattern recognition methods, principal component analysis and clustering analysis, were applied to obtain information on trace element distribution, which indicated that a number of elements were strongly spatially correlated in the analysed sample.
On leave from: Department of Chemistry, Nanjing Normal University, Nanjing, People's Republic of China 相似文献
Chemische Analyse und Verteilungsbestimmung von Spurenelementen in Indium-Matrix durch Funkenquellen-Massenspektrometrie
On leave from: Department of Chemistry, Nanjing Normal University, Nanjing, People's Republic of China 相似文献
89.
Y.-Q. Peng J.-H. Yang F.-P. Lu Q.-S. Yang H.-W. Xing X.-S. Li C.-A. Song 《Applied Physics A: Materials Science & Processing》2007,86(2):225-229
Based on the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation in chemically doped organic semiconductor are developed, by approximation of Coulomb traps with a rectangle potential well. Numerical calculations show that traditional Einstein relations do not hold for chemically doped organic semiconductors. Similar to physical doping, the dependence of diffusion coefficient to mobility D/μ ratio on the carrier concentration has a maximum. An essential difference between chemical doping and physical doping is that, the D/μ ratio in chemically doped organic semiconductors depends not only on carrier concentration and doping concentration, but also on the applied electric field. PACS 71.20.Rv; 72.90.+y; 73.50.-h 相似文献
90.