Structures de Hodge mixtes et faisceaux réflexifs semistablesMixed Hodge structures and semistable reflexive sheaves

Let X be a smooth projective variety over an algebraically closed field of characteristic 0. We prove that the category of μ-semistable reflexive sheaves of slope μ equivariant for the action of some group on X is Abelian. The same claim for $\text{X=}\text{P}{}^2{}_{\mathrm{<mtext>C</mtext>}}$ and a stronger semistability condition gives us a geometric proof of the fact that the category of mixed Hodge structures is Abelian. To cite this article: O. Penacchio, C. R. Acad. Sci. Paris, Ser. I 335 (2002) 475–480.     

Well-posed absorbing layer for hyperbolic problems

Summary. The perfectly matched layer (PML) is an efficient tool to simulate propagation phenomena in free space on unbounded domain. In this paper we consider a new type of absorbing layer for Maxwell's equations and the linearized Euler equations which is also valid for several classes of first order hyperbolic systems. The definition of this layer appears as a slight modification of the PML technique. We show that the associated Cauchy problem is well-posed in suitable spaces. This theory is finally illustrated by some numerical results. It must be underlined that the discretization of this layer leads to a new discretization of the classical PML formulation. Received May 5, 2000 / Published online November 15, 2001     

Working Methods Paper: Critical considerations with respect to the identification of tin species in the environment

Biogeochemical pathways of tin species in the environment are still controversial, e.g. with regard to methylation and transmethylation phenomena, owing to the fact that the identification of methylated tin-compounds is often difficult. The previous tentative identification of a mixed methylbutyltin compound in sediment and biological samples by GC/AAS after hydride generation gave an illustration of this problem. This compound was previously identified in sediments by other authors and also suspected to occur in a contaminated sediment sample from the Boyardville Marina, France. The retention time obtained by GC/AAS corresponded to the actual retention time of a mixed methylbutyltin calibrant. However, additional checks demonstrated that the compound detected was actually monophenyltin. This evidence was produced by a thorough analysis of a selected sediment sample by alternative techniques such as GC/AAS and GC/AES after pentylation, GC/FPD and GC/MS. The results presented highlight the need for a full identification of compounds to avoid mis-interpretation.     

Courants caractéristiques et analyse de SEREigen currents and RCS analysis

In this Note, we return to the theory of characteristic modes which was introduced 30 years ago for electromagnetic scattering problems. A simple mathematical framework is proposed and complete definitions are given. The potential interest of this theory in terms of Radar Cross Section (RCS) analysis is then discussed, especially in the low frequency case. Finally, a 3-D example is presented to illustrate the efficiency of this decomposition. To cite this article: Y. Morel et al., C. R. Mecanique 332 (2004).     

Space–time integrated least squares: a time‐marching approach

A time‐marching formulation is derived from the space–time integrated least squares (STILS) method for solving a pure hyperbolic convection equation and is numerically compared to various known methods. Copyright © 2004 John Wiley & Sons, Ltd.     

Photothermal microanalysis of thermal discontinuities in metallic samples

Modeling the behavior of a protective coating during a thermal shock not only requires the knowledge of its own thermophysical characteristics, but also those of the coating–substrate discontinuity. According to its nature, this discontinuity can be modeled as a zero-thickness interface (thermal contact resistance) or a finite thickness layer (thermal third body). This paper presents an experimental device and two associated thermal transfer models developed in view of the microscale characterization of such discontinuities.     

Geometric modeling of homoepitaxial CVD diamond growth: I. The {1 0 0}{1 1 1}{1 1 0}{1 1 3} system

Plasma-assisted CVD homoepitaxial diamond growth is a process that must satisfy many stringent requirements to meet industrial applications, particularly in high-power electronics. Purity control and crystalline quality of the obtained samples are of paramount importance and their optimization is a subject of active research. In the process of such studies, we have obtained high purity CVD diamond monocrystals with unusual morphologies, namely with apparent {1 1 3} stable faces. This phenomenon has led us to examine the process of CVD diamond growth and build up a 3D geometrical model, presented here, describing the film growth as a function of time. The model has been able to successfully describe the morphology of our obtained crystals and can be used as a predictive tool to predetermine the shape and size of a diamond crystal grown in a given process configuration. This renders accessible control of desirable properties such as largest usable diamond surface area and/or film thickness, before the cutting and polishing manufacture steps take place. The two latter steps are more sensitive to the geometry of the growth sectors, which will be addressed in a companion paper.Our model, applicable to the growth of any cubic lattice material, establishes a complete mapping of the final morphology state of growing diamond, as a function of the growth rates of the crystalline planes considered, namely {1 0 0}, {1 1 1}, {1 1 0}, and {1 1 3} planes, all of which have been observed experimentally in diamond films. The model makes no claim as to the stability of the obtained faces, such as the occurrence of non-epitaxial crystallites or twinning. It is also possible to deduce transient behavior of the crystal morphology as growth time is increased. The model conclusions are presented in the form of a series of diagrams, which trace the existence (and dominance) boundaries of each face type, in presence of the others, and where each boundary crossing represent a topology change in terms of number of faces, edges and vertices. We validate the model by matching it against crystals published in the literature and illustrate its predictive value by suggesting ways to increase usable surface area of the diamond film.