首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   82095篇
  免费   650篇
  国内免费   131篇
化学   44446篇
晶体学   1296篇
力学   3365篇
综合类   1篇
数学   8426篇
物理学   25342篇
  2022年   710篇
  2021年   983篇
  2020年   1042篇
  2019年   1172篇
  2018年   1658篇
  2017年   1750篇
  2016年   2310篇
  2015年   1129篇
  2014年   1842篇
  2013年   3529篇
  2012年   3233篇
  2011年   3640篇
  2010年   2834篇
  2009年   2786篇
  2008年   3307篇
  2007年   3160篇
  2006年   3003篇
  2005年   2714篇
  2004年   2448篇
  2003年   2256篇
  2002年   2289篇
  2001年   2288篇
  2000年   1676篇
  1999年   1284篇
  1998年   1166篇
  1997年   1066篇
  1996年   955篇
  1995年   858篇
  1994年   841篇
  1993年   849篇
  1992年   885篇
  1991年   961篇
  1990年   911篇
  1989年   927篇
  1988年   841篇
  1987年   795篇
  1986年   754篇
  1985年   892篇
  1984年   980篇
  1983年   830篇
  1982年   851篇
  1981年   757篇
  1980年   714篇
  1979年   782篇
  1978年   896篇
  1977年   919篇
  1976年   811篇
  1975年   776篇
  1974年   794篇
  1973年   762篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
101.
102.
Latent macroscopic defects in silicon are detected by electrical and electron microscope measurements. They lead to anomalous temperature dependence of the Fermi level position and growth in the hole capture coefficient. A level with energy of 0.55 eV measured from the conduction zone controls the recombination process. It is proposed that macroscopic defects develop upon association of oxygen-silicon vacancy complexes. Action of an electron beam leads to reversible changes which increase upon multiple scanning, affecting the value of the diffusion length.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 71–75, April, 1991.  相似文献   
103.
104.
105.
106.
107.
We prove theorems that characterize the classes of functions whose best approximations by algebraic polynomials tend to zero with given order. We construct approximations of solutions of operator-differential equations by polynomials in the inverse operator. Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 50, No. 11, pp. 1506–1516, November, 1998.  相似文献   
108.
The asymptotic behavior of the spectra for large values of the scattering vector for the case of elastic multiple small-angle neutron scattering (SANS) is investigated theoretically and experimentally. An expansion of the spectrum in terms of the reciprocal of the magnitude of the momentum transfer is obtained taking account of the influence of the instrumental line. It is shown that, to within some factor, the leading term of the expansion is identical to the differential single-scattering cross section averaged over a statistical ensemble of particles; several subsequent terms in the expansion are calculated and the range of applicability of the resulting expressions is determined. The asymptotic behavior of the multiple SANS spectrum is measured, using a two-crystal neutron spectrometer, for samples of an HTSC ceramic, the alloy Fe-Ni, and Al powder. The agreement between the experimental results and the theoretical predictions is analyzed. Zh. éksp. Teor. Fiz. 114, 2194–2203 (December 1998)  相似文献   
109.
Films of nonuniform Cu100−xCox alloys with x = 6, 11, 20, and 35 at. %, obtained by electrolytic deposition, are investigated using quantum magnetometry in fields of up to 5.5 T and temperatures of 2–300 K. In all the compositions a characteristic feature is the deviation from pure superparamagnetic behavior, which increases as the annealing of the films and their cobalt content increase. Institute of Solid State and Semiconductor Physics. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 60–62, March, 1998.  相似文献   
110.
Results are presented for experimental studies of the static current-voltage characteristics of tunneling MIS diodes based on n-type gallium arsenide. It is shown that the forward branch of the current-voltage characteristics can be used to determine the dependence of the surface potential at the dielectric-semiconductor interface on the voltage and the distribution of the surface state density over energy in the forbidden band. The results of studies of these dependences for diodes prepared by thermal annealing at various temperatures are given. The possible causes of changes in the forward and reverse current, and the dependence of the surface potential on the voltage and distribution of surface state density in energy under the action on the diodes of a gaseous mixture containing hydrogen are analyzed. V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 69–83, January, 1998.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号