Synthesis of Phosphonoindoprofen

Two synthetic routes to phosphonic analogues of indoprofen, a nonsteroidal anti-inflammatory drug, were developed by the cyclization of aniline 2 (method A) and by the Arbuzov reaction of corresponding alkylchloride 3 with triethylphosphite (method B).     

Sulfur Ligands. from β-Lactam Antibiotics to Contrast Agents for MRI

Abstract

NMR, IR and semi empirical Molecular Orbital PM3 studies on selected β-lactam antibiotics are reported. The role of sulfur in β-lactam antibiotics is discussed.     

Energy dependence of the 6Li + 16O elastic scattering versus that of 7Li + 16O

The European Physical Journal A - Existing data for the 6Li + 16O elastic scattering at $ E_{c.m.}=3.27$ -36.8MeV were analyzed within the optical model and coupled-reaction-channels method. The...     

Strain relaxation in the epitaxy of La2/3Sr1/3MnO3 grown by pulsed-laser deposition on SrTiO3(001)

With a Curie point at 370?K, the half-metal (La_0.7Sr_0.3)MnO₃ (LSMO) is one of the most interesting candidates for electronic devices based on tunnel magnetoresistance. SrTiO₃ (STO) is up to now the best substrate for the epitaxy of suitable thin films of LSMO. The pseudocubic unit cell of rhombohedral LSMO has a parameter a _LSMO such that (a _STO ? a _LSMO)/a _LSMO = +?0.83% (where a _STO is the parameter of cubic STO) and an angle of 90.26°. As strained growth is tetragonal, relaxation implies recovery of both the pseudocubic parameter and of the original angle. In the LSMO layers that we prepare by pulsed-laser deposition, we show that these two processes are quite independent. The angular distortion is partially recovered by twinning in films 25?nm thick, while recovery of the parameter never occurs in the thickness range that we explored (up to 432?nm). A relaxation, however, takes place above a thickness of 100?nm, associated with a transition from two-dimensional to three-dimensional columnar growth. It is accompanied by chemical fluctuations. Our magnetic measurements exhibit Curie temperatures and magnetic moments very close to the bulk values in those layers where the crystal parameter is strained but the angle partially relaxed.     

Gapless-excitation induced resistivity in ferromagnetic layers

Magnetic domains in a two-dimensional ferromagnetic metal and the existence of gapless magnons confined along the domain walls are studied starting from the XXZ model for localized spins. The relevance for transport properties of the inelastic interaction between conduction electrons and the localized magnons is analysed, and conductivity calculations presented.