Growth of SnO2 nanoparticles via thermal evaporation method

Tin oxide (SnO₂) nanoparticles were fabricated by evaporation of Sn powers at 1000 °C in air pressure. The as-deposited SnO₂ particles were single crystal structure, which were mostly spherical shape, the diameter of particles was ranging from 200 to 600 nm. The photoluminescence (PL) spectrum showed that a sharp emission peak at around 393 nm with the excitation wavelength at 325 nm, which suggested possible applications in nanoscaled optoelectronic devices. It was also found that the holding time affects the morphology of the products. The formation mechanism of SnO₂ particles was discussed.     

Growth and properties of wide spectral white light emitting diodes

Wide spectral white light emitting diodes have been designed and grown on a sapphire substrate by using a metal-organic chemical vapor deposition system. Three quantum wells with blue-light-emitting, green-light-emitting and red-light-emitting structures were grown according to the design. The surface morphology of the film was observed by using atomic force microscopy. The films were characterized by their photoluminescence measurements. X-ray diffraction θ/2θ scan spectroscopy was carried out on the multi-quantum wells. The secondary fringes of the symmetric ω/2θ X-ray diffraction scan peaks indicate that the thicknesses and the alloy compositions of the individual quantum wells are repeatable throughout the active region. The room temperature photoluminescence spectra of the structures indicate that the white light emission of the multi-quantum wells is obtained. The light spectrum covers 400-700 nm, which is almost the whole visible light spectrum.     

Electronic band structure of a type-II ’W’ quantum well calculated by an eight-band k·p model

In this paper, we present an investigation of type-II 'W' quantum wells for the InAs/Ga_1-xIn_xSb/AlSb family, where 'W' denotes the conduction profile of the material. We focus our attention on using the eight-band k?p model to calculate the band structures within the framework of finite element method. For the sake of clarity, the simulation in this paper is simplified and based on only one period---AlSb/InAs/Ga_1-xIn_xSb/InAs/AlSb. The obtained numerical results include the energy levels and wavefunctions of carriers. We discuss the variations of the electronic properties by changing several important parameters, such as the thickness of either InAs or Ga_1-xIn_xSb layer and the alloy composition in Ga_1-xIn_xSb separately. In the last part, in order to compare the eight-band k?p model, we recalculate the conduction bands of the 'W' structure using the one-band k?p model and then discuss the difference between the two results, showing that conduction bands are strongly coupled with valence bands in the narrow band gap structure. The in-plane energy dispersions, which illustrate the suppression of the Auger recombination process, are also obtained.     

A controlled quantum teleportation scheme of an N-particle unknown state via three-particle W1 states

In this paper a controlled quantum teleportation scheme of an N-particle unknown state is proposed when N groups of three-particle W1 states are utilized as quantum channels. The quantum information of N-particle unknown state is transmitted from the sender to the recipient under the control of all supervisors. It can be realized with a certain probability. After the sender makes Bell-state measurements and the supervisors perform the computational basis measurements, the recipient will introduce auxiliary particles and carry out unitary transformations depending on classical information from the sender and the supervisors. Finally, the computational basis measurement will be performed by the recipient to confirm whether the teleportation succeeds or not. The successful completion of the scheme relies on all supervisors＇ cooperation. In addition, the fidelity and security of the scheme are discussed.     

镉污染水稻高光谱诊断分析与建模

为了快速、准确地探测自然环境下水稻镉污染胁迫状况,提出了一种基于可见光-近红外光谱小波分析技术的快速识别和估算水稻镉污染的方法。根据野外实测水稻高光谱数据、水稻叶片主要生化参数及重金属含量等数据,利用Daubechies小波系的db5小波函数对350～1300nm水稻高光谱反射率进行9层分解,并提取小波能量系数进行镉含量回归建模。结果显示:第5层小波分解(d5)的奇异范围为550～810nm,奇异幅度为0.04,模极大值的中心位于700nm处,对识别水稻镉污染效果最佳;以第3层小波能量系数作为自变量的回归模型对水稻镉含量估算精度最高,其决定系数R2高达0.958,均方根误差RMSE为0.122。小波奇异性分析可以较准确的诊断水稻镉污染胁迫状况,基于小波能量系数的建模能有效估算水稻镉污染胁迫水平。     

高能π–p碰撞J/ψ+γ硬衍射产生

用I–S模型与夸克偶素的色八重态产生机制,对πp碰撞J/ψ+γ协同产生的单衍射过程的微分截面及总截面进行计算,结果表明,把J/ψ+γ协同产生的单衍射过程和单举过程相结合,可以探测Pomeron中的胶子成分并对硬衍射因子化进行检验.     

V型原子与光场拉曼相互作用传送未知原子态

未知量子态从一个地方到另一个地方的隐形传送在量子信息领域中有非常重要的作用,提出了一种利用简并V型三能级原子与振幅很大的单模相干态腔场的拉曼相互作用来传送未知原子态的方案。     

投影的约化极小模和空间的夹角

Let M and N be nonzero subspaces of a Hilbert space H, and PM and PN denote the orthogonal projections on M and N, respectively. In this note, an exact representation of the angle and the minimum gap of M and N is obtained. In addition, we study relations between the angle, the minimum gap of two subspaces M and N, and the reduced minimum modulus of （I - PN）PM,     

一类广义幂零群

This paper considers such a group G which possesses nontrivial proper subgroups H 1 ,H 2 such that any proper subgroup of G not contained in H 1 ∪ H 2 is p-closed and obtains that if G is soluble,then the number of prime divisors contained in ｜G｜ is 2,3 or 4;if not,then it has a form x N where N/Φ（N） is a non-abelian simple group.Then the structure of such a group is determined for p = 2,H 1 = H 2 under some conditions.     

二极管侧面抽运Nd∶YAG 4波长同时输出激光

为了获得1064nm,1319nm,589nm及660nm 4波长激光同时输出,设计了双激光晶体同步声光调Q“T”型复合谐振腔。通过软件模拟与计算,筛选出理想的谐振腔参数,使2波长基频光在大泵浦电流范围内能稳定运转。以KTP晶体和LBO晶体为和频晶体和倍频晶体,在泵浦电流为17A,重复频率为10kHz时,获得了1064nm,1319nm,589nm和660nm 4波长激光输出,最高平均功率分别为150mW,80mW,2.3W和1.7W,同时测得589nm激光和660nm激光的脉冲宽度分别为110ns和130ns。结果表明：使用热稳“T”型复合腔,可以获得4波长激光同时稳定输出。