A Hybrid Metaheuristic Based on Neurocomputing for Analysis of Unipolar Electrohydrodynamic Pump Flow

A unipolar electrohydrodynamic (UP-EHD) pump flow is studied with known electric potential at the emitter and zero electric potential at the collector. The model is designed for electric potential, charge density, and electric field. The dimensionless parameters, namely the electrical source number (Es), the electrical Reynolds number (ReE), and electrical slip number (Esl), are considered with wide ranges of variation to analyze the UP-EHD pump flow. To interpret the pump flow of the UP-EHD model, a hybrid metaheuristic solver is designed, consisting of the recently developed technique sine–cosine algorithm (SCA) and sequential quadratic programming (SQP) under the influence of an artificial neural network. The method is abbreviated as ANN-SCA-SQP. The superiority of the technique is shown by comparing the solution with reference solutions. For a large data set, the technique is executed for one hundred independent experiments. The performance is evaluated through performance operators and convergence plots.     

Study of Nonlinear Models of Oscillatory Systems by Applying an Intelligent Computational Technique

In this paper, we have analyzed the mathematical model of various nonlinear oscillators arising in different fields of engineering. Further, approximate solutions for different variations in oscillators are studied by using feedforward neural networks (NNs) based on the backpropagated Levenberg–Marquardt algorithm (BLMA). A data set for different problem scenarios for the supervised learning of BLMA has been generated by the Runge–Kutta method of order 4 (RK-4) with the “NDSolve” package in Mathematica. The worth of the approximate solution by NN-BLMA is attained by employing the processing of testing, training, and validation of the reference data set. For each model, convergence analysis, error histograms, regression analysis, and curve fitting are considered to study the robustness and accuracy of the design scheme.     

Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

We demonstrate a simple, low‐cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono‐crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma‐assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in‐situ Czochralski process. We show well‐behaved high‐κ /metal gate metal–oxide–semiconductor capacitors (MOSCAPs) using this film. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Transfer of radioactivity from soil to vegetation in Rechna Doab,Pakistan

In Rechna Doab, samples of the most common vegetation, perennial grass Desmostachya bipinnata (dab), were collected along with soil samples from 29 sites. Natural radioactivity of ²²⁶Ra, ²³²Th/²²⁸Ac and ⁴⁰K was measured by using high purity germanium-based gamma ray spectrometer. Activity concentration levels of ²²⁶Ra, ²³²Th/²²⁸Ac and ⁴⁰K in soil were found to be 46.8±6.2 (36.0–57.6), 61.4±5.9 (48.2–73.2) and 644.8±73.9 (537.7–868.4) Bq kg^?1 (dry mass), respectively, and those in vegetation were 2.74±1.70 (1.00–6.39), 2.24±0.59 (1.56–2.61) and 172.72±113.37 (53.14–469.24) Bq kg^?1 (dry mass), respectively. The measured values of the activity concentration in vegetation are comparable with some other international data. Calculated soil to vegetation transfer factors of ²²⁶Ra, ²²⁸Ac and ⁴⁰K were 0.06±0.03 (0.02–0.14), 0.04±0.01 (0.03–0.04) and 0.26±0.16 (0.09–0.69). The mean outdoor absorbed dose rate in air for the area under study was determined as 8.22 nGy h^?1 and the mean indoor absorbed dose rate in air was 11.52 nGy h^?1. The total annual effective dose to the general public from the vegetation was found to be (0.02–0.16) mSv, which is below the recommended limit value of 1 mSv y^?1 for the general public. The dab vegetation under study was found to be radiologically safe for the population and environment.     

Strain modification of AlGaN layers using swift heavy ions

Epitaxial AlGaN/GaN layers grown by molecular beam epitaxy (MBE) on SiC substrates were irradiated with 150 MeV Ag ions at a fluence of 5×10¹² ions/cm². The samples used in this study are 50 nm Al_0.2Ga_0.8N/1 nm AlN/1 μ m GaN/0.1 μ m AlN grown on SI 4H-SiC. Rutherford backscattering spectrometry/channeling strain measurements were carried out on off-normal axis of irradiated and unirradiated samples. In an as-grown sample, AlGaN layer is partially relaxed with a small tensile strain. After irradiation, this strain increases by 0.22% in AlGaN layer. Incident ion energy dependence of dechanneling parameter shows E ^1/2 dependence, which corresponds to the dislocations. Defect densities were calculated from the E ^1/2 graph. As a result of irradiation, the defect density increased on both GaN and AlGaN layers. The effect of irradiation induced-damages are analyzed as a function of material properties. Observed results from different characterization techniques such as RBS/channeling, high-resolution XRD and AFM are compared and complemented with each other to deduce the information. Possible mechanisms responsible for the observations have been discussed in detail.     

Role of ion energy flux on the structural and morphological properties of silicon oxy-nitride composite films deposited by plasma focus device

ABSTRACT

Crystalline silicon oxy-nitride (SiON) composite films are deposited on Si substrate for multiple (5, 15, 25 and 50) focus shots (FS) by plasma focus device. The X-rays diffraction patterns reveal the development of various diffraction peaks related to Si, Si₃N₄, and SiO₂ phases which confirms the formation of SiON composite film. The intensity of Si₃N₄ (1 0 2) plane is linearly increased with the increase of FS. The Si₃N₄ (1 0 2) phase does not nucleate for 5 FS. Raman analysis confirms the formation of β–Si–N phase. Raman and Fourier transform infrared spectroscopy analysis reveals that the strength of chemical bonds like Si–N, Si–O formed during the deposition process of SiON composite films is associated with the bonds intensity which in turn depends on the number of FS. The field emission scanning electron microscopic analysis reveals that the surface morphology like size, shape and distribution of micro/nano-dimensional particles, film compactness and the formation of micro-rods, micro-teethes and micro-tubes of SiON composite films is entirely associated with the rise in substrate surface transient temperature which in turn depends on the increasing number of FS. The EDX spectrum confirms the presence of Si (22.5?±?4.7 at. %), N (13.4?±?4.5 at. %) and O (54.7?±?11.3 at. %) in the SiON composite film. The thickness of SiON composite film deposited for 50 FS is found to ～15.47?µm.     

Track shapes,etching characteristics and track density distribution on different planes of apatite

Abstract

Studies concerning track shapes, etching characteristics and track density due to spontaneous fission of uranium along various crystallographic planes of apatite are represented. The studies were carried out on large complete crystals as well as on small grains of apatite belonging to various geological origins. Three track types (hexagonal, pyramidal and needle type) have been identified along various crystallographic planes.     

Harmonic and Intermodulation Performance of Fabry-Perot Intensity Modulator

Abstract

In this article, a mathematical model for the transfer function of the Fabry-Perot intensity modulator is presented. The model, basically a cosine-series function, can be used to obtain closed-form expressions for the amplitudes of the harmonic and intermodulation products of the Fabry-Perot intensity modulator driven by a multi-frequency radio frequency voltage. The special case of a Fabry-Perot intensity modulator driven by an equal-amplitude two-frequency radio frequency voltage is considered in detail, and the results are compared, whenever possible, with previously published experimental and numerically obtained results.     

Absorption intensities for the 4-0 through 7-0 overtone bands of HCl

We have measured the absorption intesities for a number of rotation-vibration lines in the 4-0 through 7-0 overtone bands of HCl utilizing a Fourier transform spectrometer and a 409.6 m path length White cell. Individual line strengths, band strengths, dipole matrix elements, and Herman-Wallis factors are presented.     

Activation energy in α-palladium hydrides

A tight-binding method is used to estimate the activation energy in α-palladium hydrides. We obtain an interstitial activation energy of 0.26 eV for the indirect migration through the tetrahedral position. This is in fair agreement with experimental results.