(NH4)2MoS4在活性炭上浸渍过程的研究:Ⅱ.干燥机理及模型

（ＮＨ＿４）＿２ＭｏＳ＿４在活性炭上浸渍过程的研究Ⅱ．干燥机理及模型秦慧芳，张成芳，陆岗，俞丰，朱子彬（华东理工大学无机化工研究所，上海２００２３７）２３７）关键词硫代钼酸铵，活性炭，干燥，钼分布，干燥模型负载型催化剂的活性组分在载体上的分布，受浸渍...     

光电光谱法分析钢中钙

本文研究了用光电光谱法测定钢中钙的方法 ,确定了最佳分析条件 ,分析了共存元素的干扰情况。用本方法测定钢中钙 ,具有良好的准确度和精密度 ,结果令人满意。     

探索性物理实验的双重教育功能

利用现代教育理论，结合物理实验的教学实际，探讨和研究了探索性物理实验的双重教育功能．通过具体的探索性物理实验案例，验证了探索性物理实验具有激发学生的兴趣、发展学生的探索精神和唤起教师创造性的双重教育功能．     

Bis[μ‐1‐(1,10‐phenanthrolin‐2‐yl)‐2‐pyridone]bis{aqua[1‐(1,10‐phenanthrolin‐2‐yl)‐2‐pyridone]cadmium(II)} tetrakis(perchlorate)

In the title centrosymmetric binuclear complex, [Cd₂(C₁₇H₁₁N₃O)₄(H₂O)₂](ClO₄)₄, the Cd^II ion assumes a distorted octahedral geometry. There are π–π stacking interactions between the pyridine and 1,10‐phenanthroline ring systems of adjacent ligands at the same Cd^II centre. Intermolecular hydrogen bonds between the coordinated aqua ligand and the O atom of a keto group connect adjacent complex cations into extended chains. Hydrogen bonds also exist between the complex cations and the perchlorate anions. Compared with the fluorescence spectrum of the organic ligand, the complex displays strong fluorescent emission and an ipsochromic shift of the emission peaks, which may be attributed to the structural character.     

宜产葛根中微量元素含量的测定

原子吸收分光光度法测定了宜昌地区产葛根中的Cu．Fe．Zn、Mn、Mo．Mg、Se等6种微量元素。为葛根的药效进一步研究和综合开发利用提供了新的科学依据。     

On the characterization of continuum structure functions

A continuum structure function is a non-decreasing mapping from the unit hypercube to the unit interval. Within the class of continuum structure functions, new axiomatic characterizations of the Natvig and the Barlow-Wu subclass are obtained.     

CO（ a）+ NO（X）传能体系中的新传能通道

在相对碰撞平动能为 0 .0 5eV的分子束实验条件下 ,研究了亚稳态CO(a) +NO(X)的E E传能通道 .通过测量和分析交碰区的传能发射光谱 ,在 780和 860nm处观测到了NO(b -a)跃迁Ogawa带的△v =+ 4和△v =+ 3序的发射光谱 .从而首次在实验上直接证实了传能过程中第四通道的存在 (CO (a) +NO(X)→CO (X) +NO(b) ) .这一通道的发现解释了前人测量到的在CO(a)与NO(X)碰撞传能过程中CO(a)的猝灭速率远大于NO(A ,B)生成速率的实验结果 ,并进一步证实了这一“经典”E E传能体系为电子交换机理的传能观点     

The Characteristic of Threading Dislocation in Different Structures GaN Films Grown by MOCVD

Three mechanisms to reduce threading dislocations(TDs) in GaN films as the epitaxial films grow thicker are suggested by SEM and TEM