锂离子进入碳纳米管端口速度的分子动力学模拟

锂离子进入碳纳米管端口的速度V Li是影响锂离子电池充电性能的重要因素.采用分子动力学模拟方法,研究了直径、温度、电场强度和端口改性官能团四种因子对其影响.运用正交实验方法,分析得出了各因子及其不同水平的影响规律.结果表明,四种因子的影响力度由大到小依次为:电场强度、官能团类型、碳纳米管直径和温度.在本文的模拟条件下,随着电场强度和碳纳米管直径的增大,V Li逐渐增加,且在电场强度下的增幅会更显著;碳纳米管端口官能团分别改性为氢原子(—H),羟基(—OH),氨基(—NH2)以及羧基(—COOH)时,V Li会逐步降低;随着温度的增大,V Li先增加后减小,但整体波动偏幅不大.     

基于能量分布的红外像点定位分析方法

在红外探测器的应用中,常用统计分析、算例验证等方法研究目标成像精确定位问题。鉴于上述方法难以充分阐释物理意义与揭示普遍规律,提出基于能量分布及成像特征的分析方法,针对红外探测目标成像精确定位问题,利用能量分布和数字图像中成像规律,研究像点定位及精度分析。研究了红外目标成像和数字图像特点,建立了定位模型和方法流程;分析了定位误差影响因素,实现了定位结果精度评定;最后结合典型应用实例,进行了计算验证。该方法与已有方法相比,分析过程更直观,获取了红外像点定位分析的理论依据,并给出了定位结果的精度水平:通常红外成像应用中,精度优于1/6像元;在成像较大时,精度可达1/10像元以上。该研究结论对红外探测应用中目标准确定位具有重要意义。     

广义Lienard方程边值问题

By coincidence degree,the existence of solution to the boundary value problem of a generalized Liénard equation a(t)x＂+F(x,x′)x′+g(x)=e(t),x(0)=x(2π),x′(0)=x′(2π)is proved,where a∈C1[0,2π],a(t)>0(0≤t≤2π),a(0)=a(2π),F(x,y)=f(x)+α| y|β,α>0,β>0 are all constants,f∈C(R,R),e∈C[0,2π]. An example is given as an application.     

依状态独立的随机环境中的马氏链

本主要讨论了依状态独立的随机环境中的马氏链，并严格地证明了依状态独立的随机环境中的马氏链，如果在环境不退化的一般情形下，不是时齐马氏链，而环境退化必然是马氏链这个结论。     

The p-Harmonic Heat Flow with Potential into Homogeneous Spaces

In this paper we prove the existence of global weak solutions of the p-harmonic flow with potential between Riemannian manifolds M and N for arbitrary initial data having finite p-energy in the case when the target N is a homogeneous space with a left invariant metric. Received March 17, 1999, Revised September 22, 1999, Accepted October 15, 1999     

Bifurcation and resonance in a fractional Mathieu-Duffing oscillator

The bifurcation and resonance phenomena are investigated in a fractional Mathieu-Duffing oscillator which contains a fast parametric excitation and a slow external excitation. We extend the method of direct partition of motions to evaluate the response for the parametrically excited system. Besides, we propose a numerical method to simulate different types of local bifurcation of the equilibria. For the nonlinear dynamical behaviors of the considered system, the linear stiffness coefficient is a key factor which influences the resonance phenomenon directly. Moreover, the fractional-order damping brings some new results that are different from the corresponding results in the ordinary Mathieu-Duffing oscillator. Especially, the resonance pattern, the resonance frequency and the resonance magnitude depend on the value of the fractional-order closely.     

Characterization of Al/Si junctions on Si(100) wafers with chemical vapor deposition-based sulfur passivation

Chemical vapor deposition-based sulfur passivation using hydrogen sulfide is carried out on both n-type and p-type Si(100) wafers. Al contacts are fabricated on sulfur-passivated Si(100) wafers and the resultant Schottky barriers are characterized with current–voltage (I–V), capacitance–voltage (C–V) and activation-energy methods. Al/S-passivated n-type Si(100) junctions exhibit ohmic behavior with a barrier height of <0.078 eV by the I–V method and significantly lower than 0.08 eV by the activation-energy method. For Al/S-passivated p-type Si(100) junctions, the barrier height is ~0.77 eV by I–V and activation-energy methods and 1.14 eV by the C–V method. The discrepancy between C–V and other methods is explained by image force-induced barrier lowering and edge-leakage current. The I–V behavior of an Al/S-passivated p-type Si(100) junction remains largely unchanged after 300 °C annealing in air. It is also discovered that heating the S-passivated Si(100) wafer before Al deposition significantly improves the thermal stability of an Al/S-passivated n-type Si(100) junction to 500 °C.