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981.
Twenty-five years ago, we introduced the phenomenon of negative luminescence (NL) into semiconductor physics. This paper provides an overview of work conducted to develop this fundamental concept. Initially, we consider the first-principle approach to radiation interaction with basic matter and the major properties of NL. Then we describe the problems of NL direct measurements in homogeneous materials and structures. Finally, we emphasize the use of NL approach in applications involving devices for infrared (IR) wavelength (3–12 μm) high-temperature (300–400 K) optoelectronics. Our subjects will include NL IR emitting diodes, radiative coolers, IR dynamic scene simulators, light up-conversion devices, and the Stealth effect in IR. 相似文献
982.
The dependence of the strangeness saturation factor on the system size, centrality and energy is studied in relativistic heavy-ion collisions. 相似文献
983.
A new optical technique based on real time holographic interferometry in true colors has been implemented around the transonic
wind tunnel of the ONERA-Lille center to analyze 2D unsteady wake flows. Tests realized in color interferometry, real time
and double exposure, use simultaneously three wavelengths of a continuous waves laser (argon and krypton mixed) and holograms
are recorded on silver-halide single-layer panchromatic Slavich PFG03c plates. The very principle of real-time true color
holographic interferometry uses three primary wavelengths (red, green and blue) to record, under no-flow conditions, the interference
among the three measurement beams and the three reference beams simultaneously on a single reference hologram. After the holographic
plate is developed, it is placed on the test setup again in the position it occupied during exposure and the hologram is illuminated
again by the three reference beams and three measurement beams. A flat, uniform color can then be observed behind the hologram.
So a horizontal, vertical, or even circular fringe pattern can be formed and the achromatic central fringe can be made out
very clearly. The single color is used to determine the path difference zero on the interferograms. The flow studied was the
unsteady flow downstream of a cylinder placed crosswise in the test section. A sequence of hundred interferograms was recorded
on the flow around the cylinder at Mach 0.37. The vortex formation and dissipation phases can be seen very clearly, along
with the fringe beat to either side of the cylinder. 相似文献
984.
985.
The UV-blue thermoluminescence (TL) emission of exsolved and twinned potassium feldspars is potentially valid to be employed in the field of dating and retrospective dosimetry. This paper reports about the following results: (i) The dose dependence of the 400 nm TL intensity of a K-rich feldspar exhibits an excellent linearity in the range of 50 mGy–8 Gy. (ii) The stability of the TL signal after 6 months of storage, shows an initial rapid decay (ca. 45%) maintaining the stability from 40 days onwards which indicates that the electron population decreases asymptotically by the X-axis and the involved electrons are located in deeper traps at room temperature. The fading process can be fitted to a first-order decay equation of the sort y=y0+A exp(−x/t). (iii) The tests of thermal stability at different temperatures confirm a continuous trap distribution with progressive changes in the glow curve shape, intensity and temperature position of the maximum peak. According to this behaviour some physical parameters are defined. 相似文献
986.
The glow curve structures for LiF:Mg,Cu,Na,Si TL detectors with various dopant concentrations and sintering temperatures were investigated for the improvement of the glow curve structure and sensitivity of the TL detector. The dopant concentrations were varied over the following ranges: Mg (0–0.25 mol%), Cu (0–0.07 mol%), Na and Si (0–1.5 mol%). With increasing Cu concentration, the intensity of the main peak was intensified and reached a maximum at a concentration of 0.05 mol%. The high-temperature peak was reduced. The dependency of the main peak intensity on the Mg concentration exhibits a sharp maximum at 0.2 mol%. The intensity of the high-temperature peak tends to rise slightly with increasing Mg concentration. It was found that the optimum concentrations of the dopants in the LiF:Mg,Cu,Na,Si TL material are Mg: 0.2 mol%, Cu: 0.05 mol%, Na and Si: 0.9 mol%. The dependency of the main peak intensity on sintering temperature exhibits a very sharp maximum at 830°C. The high-temperature peak was rapidly reduced after 825°C. 相似文献
987.
Absorption and luminiscence measurements were performed on lead-doped KCl:KI mixed single crystals. Strong differences were found between as-grown and quenched samples. New bands were observed in the absorption spectra of unquenched samples in the spectral region between the limit positions of the A bands, corresponding to chloride or iodide lattices. The strong band at 449 nm dominates the luminescence of these samples at low temperatures. Its kinetics have a complicated form and the decay time is in the interval from ns to ms. Quenched samples have a well-known luminescence spectrum caused by octahedral lead impurity centres in KCl single crystals. The kinetics, however, also indicate mixed chlorine and iodine coordination of lead in the investigated crystals. 相似文献
988.
M. Missous C. Mitchell J. Sly K. T. Lai R. Gupta S. K. Haywood 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):496
Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In0.84Ga0.16As/AlAs/In0.52Al0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In0.84Ga0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated. 相似文献
989.
J. R. Lindle W. W. Bewley I. Vurgaftman J. R. Meyer J. L. Johnson M. L. Thomas W. E. Tennant 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):558
A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 μm as a function of sample temperature. The internal efficiency at a wavelength of 4 μm was 93% at 295 K, and nearly independent of temperature in the 240–300 K range. This corresponds to an apparent temperature reduction >50 K at room temperature and >30 K at 240 K. Moreover, the reverse-bias saturation current density was only 0.13 A/cm2. The measured transmission and emission spectra were simulated using empirical HgCdTe absorption formulas from the literature. 相似文献
990.