氘化对KH2PO4晶体微观缺陷影响的正电子湮没研究

采用传统降温法从不同程度氘化(x=0, 0.51, 0.85)的生长溶液中生长氘化KH₂PO₄(KDP) 晶体, 利用正电子湮没技术(正电子寿命谱和多普勒展宽谱)、结合X射线衍射谱(XRD) 结构分析, 对KDP晶体氘化生长的微观缺陷进行了研究, 讨论了氘化程度对晶体内部微观结构特性、缺陷类型和浓度的影响. XRD结果显示晶胞参数a, b值随氘含量的增加而增加, c值无明显变化; 正电子寿命谱结果发现随着氘化浓度的提高, KDP晶体内部中性填隙缺陷以及氧缺陷不断增加, 引起晶体晶格畸变; 氢空位、K空位、杂质替位缺陷不断发生缔合反应形成复合缺陷, 缺陷浓度不断减少; 团簇、微空洞等大尺寸缺陷也在不断发生聚合反应, 缺陷浓度表现为不断减少. 多普勒实验结果表明随着氘化程度的提升, 晶体内部各类缺陷表现为同步变化. 实验结果表明, KDP晶体在低浓度氘化生长(50%以内)下缺陷反应较弱, 而在高浓度氘化(50%以上)下的缺陷反应显著增强.     

基于Cu/SiO_x/Al结构的阻变存储器多值特性及机理的研究

采用氧化硅材料构建了Cu/SiOx/Al的三明治结构阻变存储器件.用半导体参数分析仪对其阻变特性进行测量,结果表明其具有明显的阻变特性,并且通过调节限制电流,得到了四个稳定的阻态,各相邻阻态的电阻比大于10,并且具有良好的数据保持能力.在不同温度条件下对各个阻态进行电学测试及拟合,明确了不同阻态的电子传输机理不尽相同:阻态1和阻态2为欧姆传导机制,阻态3为P-F(Pool-Frenkel)发射机制,阻态4为肖特基发射机制.根据电子传输机制,建立了铜细丝导电模型并对Cu/SiOx/Al阻变存储器件各个阻态的电致阻变机制进行解释.     

(2+1)维Konopelchenko-Dubrovsky方程新的多孤子解

利用齐次平衡方法,将(2+1)维Konopelchenko-Dubrovsky方程转化为两个变量分离的线性偏微分方程,然后采用三种不同的函数假设,得到相应的常系数微分方程,通过求解特征方程,方便地构造出Konopelchenko-Dubrovsky方程新的多孤子解.     

Traveling wave solutions for two nonlinear evolution equations with nonlinear terms of any order

In this paper, based on the known first integral method and the Riccati sub-ordinary differential equation (ODE) method, we try to seek the exact solutions of the general Gardner equation and the general Benjamin-Bona-Mahoney equation. As a result, some traveling wave solutions for the two nonlinear equations are established successfully. Also we make a comparison between the two methods. It turns out that the Riccati sub-ODE method is more effective than the first integral method in handling the proposed problems, and more general solutions are constructed by the Riccati sub-ODE method.     

Slowly moving matter--wave gap soliton propagation in weak random nonlinear potential

We systematically investigate the motion of slowly moving matter--wave gap solitons in a nonlinear potential, produced by the weak random spatial variation of the atomic scattering length. With the weak randomness, we construct an effective-particle theory to study the motion of gap solitons. Based on the effective-particle theory, the effect of the randomness on gap solitons is obtained, and the motion of gap solitons is finally solved. Moreover, the analytic results for the general behaviours of gap soliton motion, such as the ensemble-average speed and the reflection probability depending on the weak randomness are obtained. We find that with the increase of the random strength the ensemble-average speed of gap solitons decreases slowly where the reduction is proportional to the variance of the weak randomness, and the reflection probability becomes larger. The theoretical results are in good agreement with the numerical simulations based on the Gross--Pitaevskii equation.     

节能灯用BaMgAl10O17:Eu2+,Mn2+荧光粉的劣化机理研究

对节能灯用BaMgAl₁₀O₁₇: Eu²⁺,Mn²⁺荧光粉的热劣化和紫外辐照劣化机理进行了对比研究. 发现热处理和紫外辐照处理均对BaMgAl₁₀O₁₇: Eu²⁺,Mn²⁺产生明显的发光劣化作用. 研究结果表明：热劣化主要涉及到Eu²⁺ 的氧化及其格位偏移, 而紫外辐照劣化与上述过程无关. 紫外辐照劣化主要源自高能紫外辐照使Eu²⁺ 处于更加不稳定的状态, 从而降低Eu²⁺ 的直接吸收和发射强度.     

CuAPTPP-TDI-TiO2光催化微球的合成及其光催化性能 (cited: 1)

采用Adler法合成了5-(4-氨基苯基)-10,15,20-三苯基卟啉铜配合物(CuAPTPP),通过甲苯二异氰酸酯(TDI)的桥联作用对TiO₂微球进行表面修饰,使TDI分子中的两个活性TDI基团分别与TiO₂表面的羟基和CuAPTPP的氨基反应,将CuAPTPP敏化剂分子以化学键合的方式固定在TiO₂表面,形成光催化微球CuAPTPP-TDI-TiO₂．通过FT-IR、XRD、SEM、EA、UV-Vis和DRS等测试手段对CuAPTPP-TDI-TiO₂进行结构表征．讨论了桥联分子TDI修饰量对光催化微球性能的影响,确定了TDI与TiO₂的最佳摩尔比．以亚甲基蓝(MB)为降解对象,考察了CuAPTPP-TDI-TiO₂微球的可见光催化性能．结果表明,桥联分子TDI在CuAPTPP与TiO₂微球表面形成了牢固的化学键,复合微球在150 W氙灯辐照下降解10 mg/LMB溶液,120 min降解率可达98.7%,其降解率过程服从一级动力学规律,测得降解速率常数为5.1×10^-2 min^-1,半衰期为11.3 min．催化微球在回收4次的条件下,对MB的降解率仍保持在90%以上．     

基于振幅调制的超冷铯原子高分辨光缔合光谱的实验研究

基于振幅调制的超冷铯原子高分辨光谱的实验研究，用相对于铯分子6S_1/2+6P_3/2离解限红失谐的光缔合激光作用于磁光阱中超冷铯原子，观察到通过光缔合产生的激发态超冷分子.在实验中，为了得到高信号-噪声比的光缔合光谱，利用声光调制器对俘获光进行振幅调制，将探测到的超冷铯原子的荧光信号利用lock-in技术解调.同时利用密度矩阵方程系统地分析了实验结果.     

含偶氮苯类星型液晶化合物的光致变色

研究了一种以Si为中心外围含4个丁氧基偶氮苯液晶基元的星型液晶化合物Si(AZO)4的光致变色规律,利用紫外-可见吸收光谱研究了在氯仿和四氢呋喃溶液中的量子产率、光致变色和光回复反应.实验结果表明样品在各溶液的光致变色和光回复反应均为一级动力学反应,并求算了光致变色反应的正、逆反应速率常数均为10-1s-1数量级,是偶氮类侧链液晶高分子的速率常数的107倍,表明Si(AZO)4的星型结构对末端偶氮基团的吸收光谱没有明显影响,产物具有类似小分子的光致变色性,并且Si(AZO)4的正、逆反应速率常数比值小于液晶基元的比值,表明具有更好的光可逆性,有望作为光控开关和新型信息功能材料.     

Adsorption-controlled transition of the electrical properties realized in Hematite（alpha-Fe2O3） nanorods ethanol sensing

Alpha-Fe2O3 nanorods are synthesized through a hydrothermal method with no surfactant introduced and ethanol sensors are fabricated from these nanorods.The device can respond to ethanol vapour in a concentration range from 1 to 1500 parts per million and shows both p-type and n-type responding characteristics during the investigation of the ethanol sensing.The sensor displays a p-type characteristic when the ethanol concentration is low and converted into an n-type characteristic as the concentration exceeds a certain value.Such a phenomenon is attributed to the chemisorbed oxygen,which leads to different modifications of the energy band at the surface,namely,depletion layer or inversion layer.