Preparation and tribological properties of DLC/Ti filmby pulsed laser arc deposition

This paper reports that DLC (diamond like carbon)/Ti and DLC films were prepared by using pulsed laser arc deposition. R-ray diffraction, Auger electron spectroscopy, Raman spectroscopy, atomic force microscopy, nanoindenter, spectroscopic ellipsometer, surface profiler and micro-tribometer were employed to study the structure and tribological properties of DLC/Ti and DLC films. The results show that DLC/Ti film, with $I(D)/I(G)$ 0.28 and corresponding to 76{\%} sp$^{3}$ content calculated by Raman spectroscopy, uniform chemical composition along depth direction, 98 at{\%} content of carbon, hardness 8.2 GPa and Young's modulus 110.5 GPa, compressive stress 6.579 GPa, thickness 46~nm, coefficient of friction 0.08, and critical load 95mN, exhibits excellent mechanical and tribological properties.     

角分辨光电子能谱光束线1200line/mm光栅研制

国家同步辐射实验室新建了覆盖5～40 eV的低能区高分辨率角分辨光电子能谱光束线.其球面光栅单色仪包含了三块光栅,即300,600和1200 line/mm球面层式(Laminar)光栅.采用全息离子束刻蚀工艺,在硅光栅基片上成功地刻蚀出1200 line/mm、占空比0.35、槽深35 nm、有效刻划面积大于120 ...     

V型稠密介质中脉宽对超短脉冲和频谱及其CEP依赖性的影响

利用不含慢变包络近似和旋波近似的全波Maxwell-Bloch方程组的数值解,研究脉宽对稠密V型三能级原子介质中超短激光脉冲和频谱及其载波包络位相(CEP)依赖性的影响.结果表明:脉宽较小时,脉冲分裂数目少,频谱较宽,高频部分显著,CEP的变化对脉冲及频谱的影响较大,尤其对子脉冲间的时间间隔及频谱高频部分强度大小的影响更为显著;随着脉宽的增大,脉冲分裂数目增多,频谱宽度变窄,高频部分强度明显降低,CEP的变化对脉冲及频谱的影响减弱.     

Leading-order actions of Goldstino fields

This paper starts with a self-contained discussion of the so-called Akulov–Volkov action S_AV\mathcal{S}_{\mathrm{AV}}, which is traditionally taken to be the leading-order action of the Goldstino field. Explicit expressions for S_AV\mathcal{S}_{\mathrm{AV}} and its chiral version S_AV^ch\mathcal{S}_{\mathrm{AV}}^{\mathrm{ch}} are presented. We then turn to the issue on how these actions are related to the leading-order action S_NL\mathcal{S}_{\mathrm{NL}} proposed in the newly proposed constrained superfield formalism. We show that S_NL\mathcal{S}_{\mathrm{NL}} may yield S_AV/S_AV^ch\mathcal{S}_{\mathrm {AV}}/\mathcal{S}_{\mathrm{AV}}^{\mathrm{ch}} or a totally different action S_KS\mathcal{S}_{\mathrm{KS}}, depending on how the auxiliary field in the former is integrated out. However, S_KS\mathcal{S}_{\mathrm{KS}} and S_AV/S_AV^ch\mathcal{S}_{\mathrm {AV}}/\mathcal{S}_{\mathrm{AV}}^{\mathrm{ch}} always yield the same S-matrix elements, as one would have expected from general considerations in quantum field theory.     

农产品外部品质无损检测中高光谱成像技术的应用研究进展

高光谱成像技术是一种传统图像及光谱的融合技术,可以同时获取研究对象的空间及光谱信息.由于图像数据能反映农产品的外部特征、表面缺陷及污斑情况,而光谱数据又可以对物体内部物理结构及化学成分进行分析.因此,近几年在农产品品质无损检测中引起越来越多的关注,成为一个研究热点.为了跟踪国内外的最新研究成果,对高光谱反射及荧光成像技术应用于农产品(水果、蔬菜、肉类、谷物等)的外部品质检测进行了分类综述,以期为高光谱技术在农业方面更广阔的应用提供参考.     

自旋梯中的量子失协

对存在循环相互作用的自旋梯耦合的两粒子的量子失协进行了讨论.对于双边耦合的情况,两耦合粒子的量子失协都是时间的周期函数,但是与时间间隔无关.通过讨论我们发现量子失协比量子纠缠更有利于量子信息的处理和量子计算.     

基于发射光谱的DF激光器光腔温度与粒子数分布

 建立了谱线增益系数与温度、粒子数分布之间及谱线增益系数与谱线强度之间的关系式,对一台燃烧驱动DF激光器的发射光谱进行了测量,利用发射光谱数据计算得到光腔温度为381.4 K,分布在振动态能级1与0,振动能级2与1,振动能级3与2的粒子数之比分别为0.60～0.62, 0.676 4, 0.71～0.74。     

Development of novel flexible black silicon

We report a new type of black silicon: flexible black silicon. A silicon-on-insulator (SOI) wafer is irradiated by automatically scanning a femtosecond laser and then split by etching out the SOI silica middle layer. Large-area, uniform micro spikes on the surface of a very thin flexible silicon layer are obtained. The black silicon shows good flexibility and optical properties. The absorption spectrum of the flexible black silicon is as high as 97% in the visible and insensitive to the change of the incident angle of the light, which makes it a potential good candidate as an absorber for the solar-thermo generator.     

透明激光陶瓷散射损耗分析

 为了定量分析激光陶瓷中散射损耗对其透过率的影响,通过建立气孔尺寸分布模型,引入第二相体积比概念,并结合Mie散射、瑞利散射和全散射积分等理论,讨论了激光陶瓷中气孔、晶界第二相和表面粗糙度等引起的散射损耗对激光陶瓷透光性能的影响。研究结果表明：气孔率的大小将明显影响陶瓷透过率,且气孔尺寸分布决定了透过率包络的变化趋势;晶界和表面散射对透过率的影响主要集中在短波长处;在气孔率较低情况下,晶界第二相的存在是导致短波长处透过率急剧降低的主要因素。     

微波射频场在微波管中产生爆炸电子发射特性初步分析

对微波射频场在微波管内引起的场致发射和爆炸电子发射及等离子体的产生进行了分析,推导了等离子体产生强度与微波振幅、材料的电阻率、热传导系数、质量密度和比热容之间的关系,得到了晶须温度分布的表达式,通过数值解析的方式总结出在远大于微波周期的时间尺度上晶须温度提高随时间线性上升。在模型所述材料特性下,温度的上升率达到了3.22×1010 ℃/s,在100 ns量级就可以使晶须发生气化形成等离子体。