Numerical wave propagation on non-uniform one-dimensional staggered grids

The wave propagation behaviour of centered difference schemes on one-dimensional non-uniform staggered grids is investigated. Previous results for the linear advection equation are extended to the case of the shallow water equations on staggered grids. For waves of a given frequency, the wave field is decomposed into right- and left-propagating components, and a wave energy conservation law is derived in terms of these components. For slowly varying grids, separate evolution equations for the right- and left-propagating components are derived, leading to the result that there is asymptotically no reflection in the limit of a slowly varying grid, provided that waves of that frequency are resolvable. However, there will be reflection from any location at which the wave group velocity goes to zero. The possibility for wave energy to tunnel through a narrow region of the grid too coarse for propagation is noted. Grids with an abrupt jump in resolution are also investigated. It is possible to tailor the scheme at the jump to minimize spurious wave reflection over a range of frequencies provided the waves are resolvable on both sides of the jump. However, it does not appear possible to avoid complete reflection, except by introducing extra dissipation terms, if the waves are not resolvable on one side of the jump. An example is presented of a second-order accurate scheme that spontaneously radiates waves from the resolution jump.     

FeS2多晶薄膜电子结构的实验研究

用磁控溅射方法制各纯Fe薄膜，并硫化合成FeS₂. 采用同步辐射X射线近边吸收谱与X射线光电子能谱研究了薄膜的电子结构. 结果表明，合成的FeS₂薄膜，在费米能级附近，有较强的Fe 3d态密度存在，同时，在价带谱中2—10eV处有强度较大的S 3p态密度存在；Fe的3d轨道在八面体配位场作用下分别为t_2g和e_g轨道，实验中由Fe的吸收谱计算得到两分裂能级之差为2.1eV;实验测得FeS₂价带结构中导带宽度约为2.4eV，导带上方仍存在第二能隙，其宽度约为2.8eV. 关键词： 磁控溅射 二硫化铁 X射线吸收近边结构 电子结构     

Be(d,n)反应中子源能谱测量及应用

 利用中子飞行时间技术和BC501A液体闪烁探测器的粒子分辨特性,测量了0°方向、20 MeV氘束轰击厚金属铍靶反应产生的中子源能谱,测量的中子能谱范围为0.7～25.0 MeV。在60°方向放置芪晶体闪烁探测器,由刻度好的BC501A液体闪烁探测器归一校正后,用于中子源强度监测。利用Be(d, n) 反应中子源,采用单粒子灵敏度标定方法,实验标定了0.75~15.75 MeV能量范围内的薄膜闪烁探测器中子能量响应曲线,实验结果与蒙特卡罗模拟计算结果在8%的不确定度范围内一致。     

Hydrothermal synthesis of graphene oxide/multiwalled carbon nanotube/Fe<Subscript>3</Subscript>O<Subscript>4</Subscript> ternary nanocomposite for removal of Cu (II) and methylene blue

In this work, highly activated graphene oxide/multiwalled carbon nanotube/Fe₃O₄ ternary nanocomposite adsorbent was prepared from a simple hydrothermal route by using ferrous sulfate as precursor. For this purpose, the graphene oxide/multiwalled carbon nanotube architectures were formed through the π-π attractions between them, followed by attaching Fe₃O₄ nanoparticles onto their surface. The structure and composition of as-prepared ternary nanocomposite were characterized by XRD, FTIR, XPS, SEM, TEM, Raman, TGA, and BET. It was found that the resultant porous graphene oxide/multiwalled carbon nanotube/Fe₃O₄ ternary nanocomposite with large surface area could effectively prevent the π-π stacking interactions between graphene oxide nanosheets and greatly improve sorption sites on the surfaces. Thus, owing to the unique ternary nanocomposite architecture and synergistic effect among various components, as-prepared ternary nanocomposite exhibited high separation efficiency when they were used to remove the Cu (II) and methylene blue from aqueous solutions. Furthermore, the adsorption isotherms of ternary nanocomposite structures for Cu (II) and methylene blue removal fitted the Langmuir isotherm model. This work demonstrated that the graphene oxide/multiwalled carbon nanotube/Fe₃O₄ ternary nanocomposite was promising as an efficient adsorbent for heavy metal ions and organic dye removal from wastewater in low concentration.     

Ultrafast Saturable Absorption of Core/Shell Colloidal Quantum Dots

Ultrafast saturable absorption (SA) materials that are capable of blocking the optical absorption under strong excitation have extensive applications in photonic devices. This work presents core/shell colloidal quantum dots (CQDs) which have the quantized energy levels, excellent band gap tunability, and possess significant SA performance. When the band gap is close to the pump pulse energy, the CQDs show significant resonant SA response. At the same excitation conditions, the core/shell CQDs dispersions show better SA response than graphene dispersions, and comparable to the recently reported molybdenum disulfide. The carrier dynamics of the SA of the CQDs is analyzed systematically. The research has also found that the two‐photon absorption of the CQDs show nearly cubic power law of the band gap, while the SA performance keeps almost the same in the nonresonant regime. Further, superior passive Q‐switched laser behavior is observed using the CQDs as a saturable absorber. The results directly reveal the physical processes of this basic problem and broaden the applications of CQDs in photonic devices.     

光的折射定律(Snell定律)演示实验装置

基于光子动量在不同媒质分界面上沿分界面方向守恒原理,制作了光的折射定律演示装置.使用该装置可演示入射角连续变化,折射角也自动遵循折射定律相应变化.本文介绍了该演示装置的原理、构造及使用方法.     

用于爆炸物探测的X射线相干散射技术研究

建立了基于X光机的相干散射实验装置, 对用于爆炸物探测的X射线相干散射技术进行了研究. 在一个固定的角度下(6.5°), 测量了多种常见爆炸物和非爆炸物的相干散射谱. 结果表明, 每种爆炸物都有特定的相干散射谱线, 包含了与物质化学组分相关的"指纹信息". 使用这一方法可以将爆炸物从常见的非爆炸物中鉴别出来.     

Ground-state entanglement in a three-spin transverse Ising model with energy current

The ground-state entanglement associated with a three-spin transverse Ising model is studied. By introducing an energy current into the system, a quantum phase transition to energy-current phase may be presented with the variation of external magnetic field; and the ground-state entanglement varies suddenly at the critical point of quantum phase transition. In our model, the introduction of energy current makes the entanglement between any two qubits become maximally robust.     

Preparation and properties of SnS film grown by two-stage process

SnS films have been prepared by a novel two-stage process. It involved sputtering of Sn film on glass substrate and sulfurization of the thin metallic tin precursor layers in a vacuum furnace. The X-ray diffraction results showed that the SnS layers had orthorhombic structure and (0 4 0) preferential growth is more and more obvious with the increase of sulfurization time. The SnS film obtained by this work shows high optical absorption efficiency, and the film has a direct optical band gap of about 1.3 eV. The films show p-type conductivity and the resistivity of SnS film decreased obviously under illumination.     

Cu掺杂β-Si3N4的力学性能和电子结构的第一性原理研究

采用基于密度泛函的第一性原理方法研究了(Si_3-xCu_x)N₄(x=0,0.25,0.5,0.75,1)晶体的稳定性、力学性能和电子结构,分析了Cu掺杂对β-Si₃N₄力学性能的影响机制.结果表明,(Si_3-xCu_x)N₄为热力学稳定结构,Cu掺杂降低了β-Si₃N₄的稳定性.由弹性常数和Voigt-Reuss-Hill近似看出,(Si_3-xCu_x)N₄满足波恩力学稳定性判据,Cu掺杂使得β-Si₃N₄的体模量、剪切模量和杨氏模量降低,当x=0时,(Si_3-xCu_x)N₄的体模量、剪切模量和杨氏模量最大,分别为234.3 GPa、126.7 GPa和322.1 GPa.根据泊松比和G/B值判断出(...