电子束辐照烟气脱硫脱氮反应器中的剂量分布的模拟计算

采用Monte-Carlo程序EGSnrcMP对能量为0.8MeV的电子束辐照烟气脱硫脱硝反应器中的剂量分布进行了模拟计算,将计算的结果运用MATLAB数学分析软件进行了数据处理,对能量为0.5MeV的电子束辐照烟气脱硫脱硝反应器中的剂量分布进行了模拟计算,并与文献中实验测量值进行了比较。结果表明:采用EGSnrcMP程序计算所得到的剂量与实验结果吻合。     

紫外－可见光谱法研究含Schiff碱基双分子膜的构象

测定了不同浓度、不同温度条件下含Ｓｃｈｉｆｆ碱基的单链两亲性化合物在Ｃ１６ＳＢＣ６Ｎ＋ＯＨ水溶液的电子吸收光谱。结果表明，两亲性分子在高温低浓度水溶液中处于较为分散状态，而在低温高浓度水溶液中呈聚集状态（双分子膜）。同时，通过量化计算比较，得出了不同聚集态时Ｓｃｈｉｆｆ碱基的构象（即Ｎ－苯环与Ｃ－苯环的扭转二面角）。     

IN MEMORIAM PROFESSOR DONGGAO DENG

Donggao Deng, professor of mathematics, the associate Editor of ATA,was born in June 8, 1935 in Rongqi Town, Shunde City, GuangdongProvince, China. He passed away by illness in Guangzhou on October21, 2007.     

A Counterexample in the Central Limit Theorem

We construct a c₀-valued random variable X such that (S_n/n)_nNhas a convergent subsequence, but X does not satisfy the centrallimit theorem. 1991 Mathematics Subject Classification 60B12.     

All-optical add-drop node for optical packet-switched networks

We have demonstrated all-optical packet add-drop for all-optical packet-switched networks. Intelligent all-optical add-drop of packets is performed, based on all-optical processing of packet headers. The header and payload rates are 5 and 10 Gbits/s, respectively.     

On the Well-Posedness Problem and the Scattering Problem for the Dullin-Gottwald-Holm Equation

In this paper, we study the well-posedness of the Cauchy problem and the scattering problem for a new nonlinear dispersive shallow water wave equation (the so-called DGH equation) which was derived by Dullin, Gottwald and Holm. The issue of passing to the limit as the dispersive parameter tends to zero for the solution of the DGH equation is investigated, and the convergence of solutions to the DGH equation as ²0 is studied, and the scattering data of the scattering problem for the equation can be explicitly expressed; the new exact peaked solitary wave solutions are obtained in the DGH equation. After giving the condition of existing peakon in the DGH equation, it turns out to be nonlinearly stable for the peakon in the DGH equation.     

Polyoxometalates matrixed into surfactants: synthesis, characterizations, and conformations of surfactants

We synthesized two surfactant-encapsulated polyoxometalate (POM) clusters (SECs), (DODA)(15)[H(3)Mo(57)V(6)(NO)(6)O(189)(H(2)O)(12)(VO)(6)].13H(2)O (SEC-2, DODA: dimethyldioctadecyl ammonium) and (DODA)(12)[Eu(H(2)O)P(5)W(30)O(110)].28H(2)O (SEC-3). SECs were characterized in detail by elemental analysis, UV-Vis absorption spectroscopy, FTIR, 1H NMR, thermogravimetric analysis, Langmuir isotherms, and powdered X-ray diffractions. SEC-2 can form a stable monolayer at the air-water interface. SEC-2 and SEC-3 possess a layered structure with periodicities of 3.8 and 5.05 nm, respectively. Alkyl chains in SEC-2 are disordered, but SEC-3 is indicative of well-ordered alkyl chains. According to the simplified structural analysis for SEC-2 and SEC-3, DODAs occupy areas of 1.12 and 0.589 nm(2) on the surface of the POMs, which are characteristic of the liquid-like and crystalline-like phases for DODA, respectively. The different conformations of DODAs then lead to the different packing structures of SECs. This work is aiming to control the organizational structures of the POM-based materials by selecting the appropriate POMs.     

Precise rate in the law of iterated logarithm for <Emphasis Type="Italic">ρ</Emphasis>-mixing sequence

Let {X, X _n;n≥1} be a strictly stationary sequence of ρ-mixing random variables with mean zero and finite variance. Set . Suppose lim _n→∞ and , where d=2, if −1<b<0 and d>2(b+1), if b≥0. It is proved that, for any b>−1,

Hardy spaces of spaces of homogeneous type

Let be a space of homogeneous type, and be the generator of a semigroup with Gaussian kernel bounds on . We define the Hardy spaces of for a range of , by means of area integral function associated with the Poisson semigroup of , which is proved to coincide with the usual atomic Hardy spaces on spaces of homogeneous type.

     

Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials

The lattice-misfit InN/GaN (0001) interface supports a triangular network of α-core 90° partial misfit dislocations. These misfit dislocations provide excellent strain relief. However, in their unreconstructed form the dislocation contains numerous high-energy N dangling bonds, which must be eliminated by reconstructing the dislocation core. Existing single-period (SP) and double-period (DP) dislocation reconstruction models eliminate these dangling bonds via a like-atom dimerization, such as N-N dimers. However, we show that these N–N dimers are unstable for the III-N materials, so an entirely new reconstruction mechanism is needed. A “triple-period” (TP) structural model is developed which eliminates N dangling bonds via the formation of N vacancies instead of N-N dimers. The model contains no N–N (or III–III) bonds, fully bonds all N atoms to four group-III neighboring atoms, and satisfies the “electron counting rule” by transferring charge from In dangling bonds to Ga dangling bonds.