Thin film synthesis and the influence of irradiation-induced defects on the superconductivity of La1.8Sr0.2CuO4

Thin superconducting films of La_1.8Sr_0.2CuO₄ have been prepared by magnetron sputter deposition and subsequent temperature treatment. The composition of the films has been determined by Rutherford backscattering and the structure by thin film X-ray diffraction. The onset of superconductivity was about 32 K and the midpoint near 28 K. Defect production in the films by He ion bombardment revealed a drasticT _c reduction with a sensitivity similar to that observed in the Chevrel phases. Oxygen implantation and subsequent annealing led to an enhancement of theT _c onset.     

Quantum HeisenbergS=1/2 spin glass with ferromagnetic coupling and random Dzyaloshinskii-Moriya interactions

By means of the generalized static replica symmetric spin glass theory, a quantum HeisenbergS=1/2 spin glass model with the infinite-ranged random Dzyaloshinskii-Moriya (DM) interaction and ferromagnetic coupling is investigated. The dependence of entropy, specific heat, susceptibility and the corresponding order parameters on temperature is studied numerically for different ferromagnetic interactions and fixed anisotropy. Two spin glass phases has been found including transverse and mixed spin glass phases. It has been shown that the local susceptibility exhibits double-cusp features for different ferromagnetic coupling (J ₀). Phase transition poins are found in the specific heat-temperature plane at various ferromagnetic coupling values. Additionally, the dependence of the spontaneous moment on temperature is calculated.     

400GeV/c pp碰撞赝快度空间带电粒子数密度的研究

利用CERNNA27合作组提供的LEBC泡室照片,测量了400GeV/cpp碰撞产生的带电粒子多重数为4—24的赝快度分布.观察到在选择的赝快度窗口(Δη=0.5和0.1)内平均最大带电粒子数密度随带电粒子多重数线性增加的规律.最大带电粒子数密度的几率分布在n大时有加宽和变平坦的趋势.没有观察到最大粒子数密度反常高的事例.     

The High Energy X-ray telescope (HE) onboard the Insight-HXMT astronomy satellite

The Insight-Hard X-ray Modulation Telescope(Insight-HXMT) is a broadband X-ray and γ-ray(1-3000 ke V) astronomy satellite. One of its three main telescopes is the High Energy X-ray telescope(HE). The main detector plane of HE comprises 18 Na I(Tl)/Cs I(Na) phoswich detectors, where Na I(Tl) is used as the primary detector to measure ~ 20-250 ke V photons incident from the field of view(FOV) defined by collimators, and Cs I(Na) is used as the active shielding detector to Na I(Tl) by pulse shape discrimination. Additionally, Cs I(Na) is used as an omnidirectional γ-ray monitor. The HE collimators have a diverse FOV,i.e. 1.1°×5.7°(15 units), 5.7°×5.7°(2 units), and blocked(1 unit). Therefore, the combined FOV of HE is approximately5.7°×5.7°. Each HE detector has a diameter of 190 mm resulting in a total geometrical area of approximately 5100 cm2, and the energy resolution is ~15% at 60 ke V. For each recorded X-ray event by HE, the timing accuracy is less than 10 μs and the deadtime is less than 10 μs. HE is used for observing spectra and temporal variability of X-ray sources in the 20-250 ke V band either by pointing observations for known sources or scanning observations to unveil new sources. Additionally, HE is used for monitoring the γ-ray burst in 0.2-3 Me V band. This paper not only presents the design and performance of HE instruments but also reports results of the on-ground calibration experiments.     

Ce掺杂6H-SiC电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,对未掺杂及Ce掺杂6H-SiC的电子结构和光学性质进行理论计算.计算结果表明,未掺杂6H-SiC是间接带隙半导体,其禁带宽度为2.045 eV,掺杂Ce元素,带隙宽度下降为0.812 eV.未掺杂6H-SiC在价带的低能区,Si-3s、C-2s电子轨道对态密度的贡献较大,在价带的高能区,主要是由Si-3p、Si-3s、C-2p态组成.掺杂后Ce原子的4f轨道主要贡献在导带部分,掺杂后电导率提高.未掺杂时,只有一个介电峰,是价带电子跃迁到导带电子所致,掺杂后有两个介电峰,第一个介电峰是由于导带电子跃迁到Ce原子4f轨道上产生,第二个峰是价带电子向导带电子跃迁产生.未掺杂6H-SiC,在能量为10.31 eV处吸收系数达到最大值,掺杂后在能量为6.57 eV处,吸收系数达到最大值.     

光电导天线太赫兹辐射峰值调控研究

针对微结构光电导天线与飞秒激光之间相互作用效应以及辐射太赫兹波调控问题进行了研究。采用德鲁德-洛伦兹理论模型获得微结构光电导天线辐射光电流密度,通过时域有限差分把光电流密度迭代在激励网格上,结合麦克斯韦方程求解时变电磁场,并通过传输线格林函数获得多层介质近场到远场的辐射太赫兹波,建立了辐射光电流与辐射阻抗、电磁共振模式之间的关系模型,模拟仿真分析了微结构S型光电导天线太赫兹波辐射调控机理。研究结果表明：微结构改变了天线等效模型的辐射阻抗;同时得知耦合系数不为零时存在耦合作用,且随着耦合系数增大共振频率峰值发生辐射增强和位移;并通过设计S型光电导天线获得辐射峰值频率调整范围为0.50～0.80 THz之间,对比工形天线辐射峰值频率由原来的0.40 T移动到0.76 T,频率调整度75%,峰值辐射效率约提高70%。该研究工作为后续高功率光导天线太赫兹波辐射的共振中心频点以及结构设计奠定重要基础。     

基于图像处理的光学谐振腔自准直研究方法

针对我国氧碘化学激光器输出能量不断提高的情况下,主要限制光束质量的因素之一是出光过程中的光腔失调,提出了一种基于图像处理的光学谐振腔自准直研究方法。该研究方法利用氦氖穿腔光通过凹腔镜中心孔,并在凸腔镜后方放置工业相机,在屏幕上方形成一个干涉同心圆环。通过借助OpenCV库中二值化、霍夫圆检测等图像处理的方法,获得干涉同心圆环的圆心坐标,再通过以圆心为中心将图像分成上下左右四个部分,通过判断这四部分亮点像素的数量差值来预估干涉同心圆环的偏移状态,进而获得空腔条件下光学谐振腔发生变化的理论判据。实验结果表明,该方法可以获得相当精准的光学谐振腔失调判据,其失调判据选取左右亮点像素差值30 000,上下亮点像素差值45 000,为今后失调判据与步进电机自动调腔的结合做好充足的准备。

     

有机发光器件的磁电导效应

制备了基于三(8-羟基喹啉)铝(tris-(8-hydroxyquinoline) aluminum (III), Alq₃) 的有机发光二极管, 并在不同偏压下测量了器件的室温磁电导效应.在小偏压下, 发光器件展示出明显的负磁电导效应.偏压增加后, 磁电导由负值变为正值, 出现了正负转变的现象. N, N'-二苯基-N, N'-(1-萘基)-1, 1'-联苯-4, 4'-二胺(N, N′-Di(naphthalen-1-yl)-N, N′ diphenyl-benzidine, NPB) 与铜酞菁 (Copper phthalocyanine, CuPc) 单极器件磁电导的测量结果表明, 发光器件在小偏压下的负磁电导效应来源于器件中的CuPc层. 双极电流的磁电导效应可用电子-空穴对模型进行解释, 而单极电流的磁电导效应可归因于器件中的极化子-双极化子转变. 在注入电流的变化过程中, 发光器件的正负磁电导转变是两种机理共同作用的结果.     

Irradiation induced changes in small angle grain boundaries in mosaic Cu thin films

We studied the effect of irradiation on small angle grain boundaries in mosaic structured Cu thin films. The films showed a decrease in mosaic spread via a narrowing of the full width at half maximum in XRD rocking curves and a smaller minimum yield of RBS channeling after irradiation. These data indicate the irradiation decreased the misorientation angles between mosaic blocks separated by small angle grain boundaries. Mechanisms involving interactions between grain boundary dislocations and irradiation induced defects are discussed.     

高速摄影在流体动力学不稳定性研究中的应用

用高速摄影技术研究了高压气体膨胀驱动空气-水界面的瑞利-泰勒不稳定性,获得了空气-水界面的不稳定性清晰图像,得到气炮尖顶运动速度及湍流混合层高度增长速度与时间关系曲线。在横式激波管上用高速纹影诊断技术研究了激波作用空气-SF6界面的里克特迈耶-梅什科夫不稳定性,初步获得了实验图像,可清晰显示混合区变化过程。