Resistance peak and giant magnetoresistance of degenerate ferromagnetic semiconductors with arbitrary spin polarization

The temperature peak of the resistance and the giant magnetoresistance of degenerate ferromagnetic semiconductors with an arbitrary degree of electron spin polarization are investigated. The spin-wave and paramagnetic domains are considered. The calculations are based on the notion of the magnetic-impurity scattering of carriers. Fiz. Tverd. Tela (St. Petersburg) 39, 1589–1593 (September 1997)     

Colossal magnetoresistance of the Sm1−x SrxMnO3 system

The results of investigating the temperature dependence of the resistivity, the differential magnetic susceptibility, and the magnetoresistance of a partially substituted perovskite Sm_1−x Sr_xMnO₃ (x=0.16–0.4) are presented. Colossal intrinsic magnetoresistance, reaching 90% in an external magnetic field of 30 kOe, is discovered in the compound with x=0.30 at 77 K. Fiz. Tverd. Tela (St. Petersburg) 39, 1831–1832 (October 1997)     

A Lieb-Thirring Bound for a Magnetic Pauli Hamiltonian

A Lieb-Thirring-Sobolev type inequality for Pauli Hamiltonians with magnetic fields is derived. The bound is in terms of an effective field, whose energy is comparable to that of the magnetic field itself. An application to the stability of matter in magnetic fields is given. Received: 19 September 1996 / Accepted: 3 January 1997     

Influence of radiation on thin ZnS-Tb films

Changes in thin zinc-sulfide films under the action of the γ-radiation of Co⁶⁰ are studied by investigating electroluminescence spectra of terbium embedded in these films as a luminescent probe. It is shown that changes in the relation of the intensities of bands, a decrease in their halfwidth and the background component, and simplification of the spectrum are observed in a short-wave region of the Tb radiation spectrum that corresponds to⁵D₃→⁷F_j transitions. The same modification of the radiation spectrum is characteristic of ZnS films whose crystalline structure is ordered in the course of thermal annealing at a temperature of 350°C. Based on the analysis of the data obtained it is inferred that irradiating the ZnS films with small radiation doses of 10⁴–10⁵ rad leads to the ordering of their crystalline structure due to the elimination of one of the types of structural defects. Institute of Physics of Semiconductors, National Academy of Sciences of Ukraine, 45, Nauka Ave., Kiev-28, 252650. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 3, pp. 338–341, May–June, 1997.     

Analytic solutions of the Schrödinger equation for the modified quartic oscillator

No analytic solutions of the Schrödinger equation are known for the quartic anharmonic oscillator. We show in this paper that there are closely related modified quartic oscillators with the potential depending on |x| for which analytic solutions for some states exist. These results can be extended to the higher order oscillators     

Dissipative Nonlinear Evolution Equations and Chaos

In this article we have studied the nonlinear interaction between ellipticity and dissipation in a set of model equations (1.1) and established the relation between this interaction and chaos. In addition to theoretical investigations, extensive numerical simulations with these equations have been made, and different routes to chaos have been found. The numerical studies have revealed the chaotic nature of the solutions.     

Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ − SR method

The residual polarization of negative muons in crystal silicon samples with phosphorus (P: 1.6×10¹³ cm⁻³) and antimony (Sb: 2×10¹⁸ cm⁻³) impurities is investigated. The measurements are made in a 1000 G magnetic field oriented in a direction transverse to the muon spin in the temperature range 4–300 K. The relaxation rate and shift of the precession frequency in the silicon sample with the phosphorus impurity are measured more accurately than previously. It is found that in antimony-doped silicon the acceptor center _μ A1 at temperatures below 30 K can be in both ionized and neutral states. The experimental data are interpreted on the basis of spin-lattice relaxation of the magnetic moment of an acceptor center, formation of acceptor-donor pairs, and recombination of charge carriers at the acceptor. Preliminary measurements showed a nonzero residual polarization of negative muons in germanium. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 61–66 (10 July 1998)