Current-voltage characteristics of Au/GaN/GaAs structure

Au/GaN/n-GaAs structure has been fabricated by the electrochemically anodic nitridation method for providing an evidence of achievement of stable electronic passivation of n-doped GaAs surface. The change of the electronic properties of the GaAs surface induced by the nitridation process has been studied by means of current-voltage (I-V) characterizations on Schottky barrier diodes (SBDs) shaped on gallium nitride/gallium arsenide structure. Au/GaN/n-GaAs Schottky diode that showed rectifying behavior with an ideality factor value of 2.06 and barrier height value of 0.73 eV obeys a metal-interfacial layer-semiconductor (MIS) configuration rather than an ideal Schottky diode due to the existence of GaN at the Au/GaAs interfacial layer. The formation of the GaN interfacial layer for the stable passivation of gallium arsenide surface is investigated through calculation of the interface state density N_ss with and without taking into account the series resistance R_s. While the interface state density calculated without taking into account R_s has increased exponentially with bias from 2.2×10¹² cm⁻² eV⁻¹ in (E_c−0.48) eV to 3.85×10¹² cm⁻² eV⁻¹ in (E_c−0.32) eV of n-GaAs, the N_ss obtained taking into account the series resistance has remained constant with a value of 2.2×10¹² cm⁻² eV⁻¹ in the same interval. This has been attributed to the passivation of the n-doped GaAs surface with the formation of the GaN interfacial layer.     

Stable H and O isotope-based investigation of moisture sources and their role in river and groundwater recharge in the NE Carpathian Mountains,East-Central Europe†

The region situated between the mountain area and the lowlands in NE Romania (East-Central Europe) is experiencing increased competition for water resources triggered by a growing population, intensification of agriculture, and industrial development. To better understand hydrological cycling processes in the region, a study was conducted using stable isotopes of water and atmospheric trajectory data to characterize regional precipitation and vapour sources derived from the Atlantic Ocean, Mediterranean and Black Seas, as well as recycled continental moisture, and to assess and partition these contributions to recharge of surface and groundwater. Atmospheric moisture in the lowlands is found to be predominantly delivered along easterly trajectories, while mountainous areas appear to be dominated by North Atlantic Ocean sources, with moisture transported along mid-latitude, westerly storm tracks. Large-scale circulation patterns affect moisture delivery, the North Atlantic Oscillation being particularly influential in winter and the East Atlantic pattern in summer. Winter precipitation is the main contributor to river discharge and aquifer recharge. As winter precipitation amounts are projected to decrease over the next decades, and water abstraction is expected to steadily increase, a general reduction in water availability is projected for the region.     

Using Raman Spectroscopy to Investigate the Molecular Level Characteristics of Endometriosis

Optics and Spectroscopy - Endometriosis is a benign gynecologic disorder. It is particularly common among young women and may make pregnancy difficult. In this study molecular level...     

A High Sensitive,Reproducible and Disposable Immunosensor for Analysis of SOX2

In this study, an ITO (indium tin oxide) based biosensor was constructed to detect SOX2. SOX2 helps the regulation of cell pluripotency and is closely related to early embryonic development, neural and sexual differentiation. SOX2 is amplified and overexpressed in some malignant tumors such as squamous cell, lung, prostate, breast, esophageal cell, colon, ovarian, glioblastoma, pancreatic cancer, gastric cancer, head and neck squamous cell carcinoma. To generate a hydroxylated clean electrode surface, ITO electrodes were treated with NH₄OH/H₂O₂/H₂O. Later, ITO‐PET electrode surfaces were modified with 3‐glycidoxypropyl trimethoxysilane (3‐GOPS). Then, Anti‐SOX2 was covalently immobilized onto the electrode surfaces. 3‐GOPS concentration, Anti‐SOX2 concentration and incubation time, SOX2 incubation time were optimized. Electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV) were utilized in order to follow up the immobilization processes and the optimization steps of the biosensor. To characterize the analytical properties of constructed immunosensor; linear range, repeatability, reproducibility and regeneration studies were investigated. The linear range of the immunosensor was detected as 0.625 pg/mL–62.5 pg/mL. Square wave voltammetry technique was also applied to the biosensor. Storage life of the biosensor was determined for identifying the possible usability of the biosensor in clinical field. Finally, the designed biosensor was applied to the real human serum samples. The results obtained with the presented biosensor were also compared with ELISA results.     

Processing and compressive response of Al/SiC functionally graded composites

The European Physical Journal Plus - The nonlocal defocusing nonlinear Schrödinger (ND-NLS) equation is comparatively studied via the Riemann–Hilbert approach. Firstly, via spectral...     

Quadratic sums of Gaussian q-binomial coefficients and Fibonomial coefficients

The Ramanujan Journal - In this paper we evaluate quadratic sums of Gaussian q-binomial coefficients with two additional parameters. We obtain a general summation theorem using a combination of...     

单晶YSZ的Xe+离子辐照效应研究

200keV Xe+离子辐照使单晶YSZ由无色透明变成紫色透明,结果表明,能量为200keV,注量为1×1017cm-22的Xe+离子辐照YSZ单晶产生的损伤高达350dpa,在损伤区产生高密度的缺陷,但仍然没有发生非晶化转变。吸收光谱测试结果表明,产生吸收带的注量阈值大约为1016cm-2。注量为1×1016cm-2和1×1017cm-2的样品,吸收带峰值分别位于522nm和497nm。光吸收带可能与Zr阳离子最近邻的氧空位捕获电子形成的F型色心和Y阳离子近邻的氧离子捕获空穴形成的V型色心有关。     

利用电子束蒸发制备铝隧道结工艺研究

采用电子束蒸发的方法在Si片上制备超导铝(Al)薄膜。利用X射线衍射和直流四电极电阻法分别测试了厚度从100埃到5000埃的Al薄膜物向组成,超导转变温度(Tc)和临界电流密度(Jc)。当Al薄膜厚度大于500埃时,超导转变温度Tc=1.2K。电子束蒸发制备的Al薄膜性能良好,具有较高的结晶质量,为制备Al超导隧道结奠定了良好基础。对小面积的Al超导隧道结工艺进行了研究,该超导隧道结两层的超导体材料为Al薄膜,中间势垒层材料为Al2O3。其中Al薄膜利用电子束蒸发制备,势垒层通过直接氧化Al薄膜表面实现,该工艺和采用直接蒸发氧化物薄膜工艺相比不仅简单而且能有效防止势垒层不连续造成的弱连接。     

Eigenvalues of Two Parameter Polynomial Operator Pencils of Waveguide Type

The spectral structure of two parameter unbounded operator pencils of waveguide type is studied. Theorems on discreteness of the spectrum for a fixed parameter are proved. Variational principles for real eigenvalues in some parts of the root zones are established. In the case of n = 1 (quadratic pencils) domains containing the spectrum are described (see Fig. 1–3). Conditions in the definition of the pencils of waveguide type arise naturally from physical problems and each of them has a physical meaning. In particular a connection between the energetic stability condition and a perturbation problem for the coefficients is given.     

Pro-torus actions on Poincaré duality spaces

In this paper, it is shown that some of the results of torus actions on Poincaré duality spaces, Borel’s dimension formula and topological splitting principle to local weights, hold if ‘torus’ is replaced by ‘pro-torus’.