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121.
Sound intensity is a measure of the magnitude and direction of the flow of sound energy. Developments in sound intensity measurement capabilities in the last quarter century have occurred because of several reasons. The main ones include the derivation of the cross-spectral formulation for sound intensity and developments in digital signal processing. This paper begins with a brief historical introduction of sound intensity measurements. Then elementary theory for sound intensity is presented. A section on sound intensity measurements is then included. The next section of the paper discusses sources of measurement error; the major sources of error are described in some detail. The paper continues with a discussion of the main applications of sound intensity measurements: sound power determination, noise source identification, and transmission loss measurements. The paper concludes with a discussion of ISO and ANSI intensity related standards and relevant references.  相似文献   
122.
The results of calculations of the elastic scattering cross section of positrons on noble gas and alkali atoms are presented. The calculations are performed within the one-electron Hartree-Fock approximation with multielectron correlations in the so-called random phase approximation with exchange taken into account. Virtual positronium formation is taken into account and proved to be very important. Arguments are presented that the positron polarization potential is repulsive for alkali atoms. The results obtained are in a reasonable agreement with experiment and with some previously reported calculations.  相似文献   
123.
The surface of hydrogen-sensitive GaAs Schottky diodes is modified by nonpolishing etching and by producing quantum wells and quantum dots in the space-charge region of the semiconductor. The sensitivity to hydrogen is found to increase by a factor of 8–37 after the etching and by two or three orders of magnitude after the introduction of quantum wells and dots. It is shown that the increased sensitivity is associated with the lowering of the barrier at the Pd/GaAs interface, the retardation of hydrogen diffusion into GaAs due to the presence of strained quantum-size layers, and an increase in the recombination current. The presence of the recombination component is supported by luminescence from the quantum wells and quantum dots, as well as from the GaAs substrate. The etch composition is shown to be a decisive factor in raising the sensitivity.  相似文献   
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New radiative lifetime measurements based on time-resolved laser-induced fluorescence techniques are reported for 18 even-parity levels belonging to the 4f5d26p and 4f 25d 2 configurations of Ce I and 6 even-parity levels belonging to the 5d26s, 4f5d6p, and 4f6s6p configurations of Ce II. Free neutral and singly ionized cerium atoms were produced by laser ablation. The Ce I and Ce II levels range in energy from 26 545 to 29 102 cm-1, and 42 573 to 48 152 cm-1, respectively. Received 25 September 2002 Published online 4 March 2003  相似文献   
127.
A system of Abrikosov vortices in a quasi-two-dimensional HTSC plate is considered for various periodic lattices of pinning centers. The magnetization and equilibrium configurations of the vortex density for various values of external magnetic field and temperature are calculated using the Monte Carlo method. It is found that the interaction of the vortex system with the periodic lattice of pinning centers leads to the formation of various ordered vortex states through which the vortex system passes upon an increase or a decrease in the magnetic field. It is shown that ordered vortex states, as well as magnetic field screening processes, are responsible for the emergence of clearly manifested peaks on the magnetization curves. Extended pinning centers and the effect of multiple trapping of vortices on the behavior of magnetization are considered. Melting and crystallization of the vortex system under the periodic pinning conditions are investigated. It is found that the vortex system can crystallize upon heating in the case of periodic pinning.  相似文献   
128.
For ϕ a δ-subharmonic function, sharp results are obtained that connectA(r, ϕ), B(r, ϕ) andT(r, ϕ), whereA(r, ϕ)=inf|z|=r ϕ(z),B(r, ϕ)=sup|z|=r ϕ(z), andT(r, ϕ) is the Nevanlinna characteristics.  相似文献   
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In his recent series of lectures, Prof. B. I. Plotkin discussed geometrical properties of the variety of associativeK-algebras. In particular, he studied geometrically noetherian and logically noetherian algebras and, in this connection, he asked whether there exist uncountably many simpleK-algebras with a fixed finite number of generators. We answer this question in the affirmative using both crossed product constructions and HNN extensions of division rings. Specifically, we show that there exist uncountably many nonisomorphic 4-generator simple Ore domains, and also uncountably many nonisomorphic division algebras having 2 generators as a division algebra. The first author is grateful to Professor B. I. Plotkin for communicating this problem to him and for stimulating conversations.  相似文献   
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