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291.
The Dantzig-Wolfe reformulation principle is presented based on the concept of generating sets. The use of generating sets allows for an easy extension to mixed integer programming. Moreover, it provides a unifying framework for viewing various column generation practices, such as relaxing or tightening the column generation subproblem and introducing stabilization techniques. 相似文献
292.
Jiang Tongsong Liu Yonghui Wei Musheng 《高校应用数学学报(英文版)》2006,21(1):113-118
This paper derives a theorem of generalized singular value decomposition of quaternion matrices (QGSVD),studies the solution of general quaternion matrix equation AXB -CYD= E,and obtains quaternionic Roth's theorem. This paper also suggests sufficient and necessary conditions for the existence and uniqueness of solutions and explicit forms of the solutions of the equation. 相似文献
293.
Raman scattering studies were performed on hot-wall chemical vapor deposited (heteroepitaxial) silicon carbide (SiC) films grown on Si substrates with orientations of (1 0 0), (1 1 1), (1 1 0) and (2 1 1), respectively. Raman spectra suggested that good quality cubic SiC single crystals could be obtained on the Si substrate, independent of its crystallographic orientation. Average residual stresses in the epitaxially grown 3C-SiC films were measured with the laser waist focused on the epilayer surface. Tensile and compressive residual stresses were found to be stored within the SiC film and in the Si substrate, respectively. The residual stress exhibited a marked dependence on the orientation of the substrate. The measured stresses were comparable to the thermal stress deduced from elastic deformation theory, which demonstrates that the large lattice mismatch between cubic SiC and Si is effectively relieved by initial carbonization. The confocal configuration of the optical probe enabled a stress evaluation along the cross-section of the sample, which showed maximum tensile stress magnitude at the SiC/Si interface from the SiC side, decreasing away from the interface in varied rate for different crystallographic orientations. Defocusing experiments were used to precisely characterize the geometry of the laser probe in 3C-SiC single crystal. Based on this knowledge, a theoretical convolution of the in-depth stress distribution could be obtained, which showed a satisfactory agreement with stress values obtained by experiments performed on the 3C-SiC surface. 相似文献
294.
Tao Jin Feng-Xian Jiang Xiao-Li Li Fang Wang Xiao-Hua Shen Rui-Qiang Zhang Hai-Shun Wu 《Applied Surface Science》2006,253(5):2708-2712
CoPt/Ag and [C/CoPt]n/Ag thin films have been prepared onto the glass substrates by magnetron sputtering. We investigated the evolution of texture and magnetic properties of CoPt/Ag and [C/CoPt]n/Ag films. The results show that C-doping plays an important role in improving (0 0 1) texture, improving the order parameter S, reducing the intergrain interactions, and making the magnetization reversal mechanism more close to Stoner-Wolfarth rotational mechanism. The growth mechanism of (0 0 1) texture also seems to be related strongly to the films thickness. Our results show that the highly (0 0 1)-oriented films with ordered fct phase have a significant potential for the perpendicular media of extremely high-density recording. 相似文献
295.
The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl2-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH4/H2/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl2 discharges is smooth, whereas that after etching in CH4/H2/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH4/H2/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH4/H2/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication. 相似文献
296.
297.
M. Mayr K. -H. Speidel M. Knopp W. Karle T. Faestermann F. Hagelberg H. -J. Simonis P. N. Tandon J. Gerber 《Zeitschrift für Physik A Hadrons and Nuclei》1987,327(2):157-161
[Theg-factor ratio of the first excited 3? and 5? states in40Ca was measured to beg 3/g 5=1.01(10) employing the implantation perturbed angular correlation technique. The static hyperfine fields (SF) in Fe and Gd hosts were used. In addition the lifetime of the 5? state was measured to be τ=426(7)ps. The values of the SF in Gd and Fe hosts were deduced and compared with systematics in this element region. 相似文献
298.
299.
The authors give a consistent affirmative response to a question of Juhász, Soukup and Szentmiklóssy: If GCH fails, there are (many) extraresolvable, not maximally resolvable Tychonoff spaces. They show also in ZFC that for ω<λ?κ, no maximal λ-independent family of λ-partitions of κ is ω-resolvable. In topological language, that theorem translates to this: A dense, ω-resolvable subset of a space of the form (DI(λ)) is λ-resolvable. 相似文献
300.