SnS Nanosheets for 105th Harmonic Soliton Molecule Generation

As a member of the 2D group IV monochalcogenides (MX; M = Sn, Ge; X = S, Se), SnS has attracted great interest due to its outstanding optical, electrical, and optoelectronic properties. Especially, SnS nanosheets material have a large absorption coefficient and high photoelectric conversion efficiency, it can be potentially used in optical modulators, saturable absorbers, solar cells, supercapacitors, and other optical devices. However, the nonlinear optical properties of SnS nanosheets and their applications in ultrafast photonics are seldom studied. In this paper, the nonlinear optical properties of SnS nanosheets have been characterized through a dual‐balance detection system, whose modulation depth is 5.8%. More importantly, 105th harmonic soliton molecule based on SnS saturable absorbers has been realized for the first time to the authors’ knowledge. A compact mode‐locked fiber laser with a pulse duration of 1.02 ps and a repetition rate of 459 MHz is realized near 1.5 µm. It is demonstrated that SnS nanosheets have outstanding nonlinear properties and play an extremely important role in the field of ultrafast photonics.     

Periodic Orbits Around Kerr Sen Black Holes

We investigate periodic orbits and zoom-whirl behaviors around a Kerr Sen black hole with a rational number q in terms of three integers(z,w,v),from which one can immediately read off the number of leaves(or zooms),the ordering of the leaves,and the number of whirls.The characteristic of zoom-whirl periodic orbits is the precession of multi-leaf orbits in the strong-field regime.This feature is analogous to the counterpart in the Kerr space-time.Finally,we analyze the impact of the charge parameter b on the zoom-whirl periodic orbits.Compared to the periodic orbits around the Kerr black hole,it is found that typically lower energies are required for the same orbits in the Kerr Sen black hole.     

Chirality-asymmetry force between ɑ-quartz and copper block

The chirality-asymmetry macroscopic force mediated by light pseudoscalar particles between α -quartz and some achiral matter is studied. If this force between achiral source mass and α -quartz with some chirality is attractive, it will become repulsive when the chirality of the α -quartz crystal is changed. According to the tested limits of the coupling constant g_s g_p /\hbar c< 1.5× 10^-24 at the Compton wavelength λ = 10^-3 m, the force (F) between a 0.08× 0.08× 0.002 m³ block of α -quartz and a 0.08× 0.08× 0.01 m³ copper block with a separation being 0.5× 10^-3 \mbox{m} in between, is estimated from the published data at less than 4.64× 10^-24 N, i.e. F < 4.64× 10^-24 N.     

Study of theoretical tensile strength of Fe by afirst-principles computational tensile test

This paper employs a first-principles total-energy method to investigate the theoretical tensile strengths of bcc and fcc Fe systemically. It indicates that the theoretical tensile strengths are shown to be 12.4, 32.7, 27.5~GPa for bcc Fe, and 48.1, 34.6, 51.2~GPa for fcc Fe in the [001], [110] and [111] directions, respectively. For bcc Fe, the [001] direction is shown to be the weakest direction due to the occurrence of a phase transition from ferromagnetic bcc Fe to high spin ferromagnetic fcc Fe. For fcc Fe, the [110] direction is the weakest direction due to the formation of an instable saddle-point `bct structure' in the tensile process. Furthermore, it demonstrates that a magnetic instability will occur under a tensile strain of 14%, characterized by the transition of ferromagnetic bcc Fe to paramagnetic fcc Fe. The results provide a good reference to understand the intrinsic mechanical properties of Fe as a potential structural material in the nuclear fusion Tokamak.     

氢离子与里德伯原子碰撞中的电荷转移过程

应用双中心原子轨道强耦合方法研究了H⁺与里德伯态原子Li（5d）碰撞的电荷转移过程,计算了电子转移到氢原子各个n,l壳层（这里n为主量子数,l为角量子数）的态选择截面.结果发现,电荷转移的末态主要分布在与初态电子能量5d接近的n=4—7能级,该分布随碰撞能量的变化不大;但俘获末态的l分布对入射离子能量很敏感：在1 keV左右的低能时主要分布在高l的末态,随着碰撞能量增加峰值逐渐向低l方向移动,并在l= 关键词： 电子俘获过程 双中心原子轨道强耦合方法 态选择截面     

A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er+ ions

This paper compares the properties of silicon oxide and nitride as host matrices for Er ions.Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system.After deposition,the films were implanted with Er3+ at different doses.Er-doped thermal grown silicon oxide films were prepared at the same time as references.Photoluminescence features of Er3+ were inspected systematically.It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe.However,a very high annealing temperature up to 1200° C is needed to optically activate Er3+,which may be the main obstacle to impede the application of Er-doped silicon nitride.     

A Quantum Image Watermarking Scheme Based on Two-Bit Superposition

Quantum watermarking technology protects copyright by embedding an invisible quantum signal in quantum multimedia data. This paper proposes a two-bit superposition method which embeds a watermark image (or secret information) into a carrier image. Firstly, the bit-plane is used to encrypt the watermark image. At the same time, the quantum expansion method is used to extend the watermark image to the same size with the carrier image, and then the image is encrypted through the Fibonacci scramble method again. Secondly, the first proposed method is the two bits of the watermark image which is embedded into the carrier image in accordance with the order of the high and lowest qubit, and the second proposed method which is the high bit of the watermark image is embedded to the lowest bit. Then the lowest bit of the watermark image is embedded in carrier image. Third, the watermark image is extracted through 1-CNOT and swap gates, and the watermark image is restored by inverse Fibonacci scramble, inverse expansion method and inverse bit-plane scramble method. Finally, for the validation of the proposed scheme, the signal-to-noise ratio (PSNR), the image histogram and the robustness of the two watermarking methods are analyzed.

     

A coupled-channel lattice study of the resonance-like structure Zc(3900)

In this exploratory study, near-threshold scattering of D and \begin{document}$\bar{D}^*$\end{document} meson is investigated using lattice QCD with \begin{document}$N_f=2+1+1$\end{document} twisted mass fermion configurations. The calculation is performed in the coupled-channel Lüscher finite-size formalism. The study focuses on the channel with \begin{document}$I^G(J^{PC})=1^+(1^{+-})$\end{document} where the resonance-like structure \begin{document}$Z_c(3900)$\end{document} was discovered. We first identify the two most relevant channels and the lattice study is performed in the two-channel scattering model. Combined with the two-channel Ross-Shaw theory, scattering parameters are extracted from the energy levels by solving the generalized eigenvalue problem. Our results for the scattering length parameters suggest that for the particular lattice parameters that we studied, the best fit parameters do not correspond to the peak in the elastic scattering cross-section near the threshold. Furthermore, in the zero-range Ross-Shaw theory, the scenario of a narrow resonance close to the threshold is disfavored beyond the 3\begin{document}$\sigma$\end{document} level.     

Al2O3绝缘栅AlGaN/GaN MOS-HEMT器件温度特性研究

采用原子层淀积(ALD)实现了10nm Al₂O₃为栅介质的高性能AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT). 通过对MOS-HEMT器件和传统MES-HEMT器件室温特性的对比,验证了新型MOS-HEMT器件饱和电流和泄漏电流的优势. 通过分析MOS-HEMT器件在30—180℃之间特性的变化规律,与国内报道的传统MES-HEMT器件随温度退化程度对比,得出了器件饱和电流和跨导的退化主要是由于输运特性退化造成的,证明栅介质减小了引 关键词： 原子层淀积 AlGaN/GaN MOS-HEMT器件 温度特性