小间隙高放大多丝室及其放电机制

对以强猝灭气体工作的小间隙多丝室及其放电机制进行了研究,实验表明,因为工作在饱和模式区,这种室同时具有很高的气体放大和相当快的时间特性.文中探讨了放电机制,雪崩中空间电荷效应以及电离光子的产生和作用是重要的因素,而其中后一因素又受到强猝灭气体的抑制.     

更新时间概率模型及其无偏估计定理的论证

本文提出应用小参数法 ,探讨 Markov链中相邻两次更新时刻内稀疏事件的概率估计问题 .建立了三种最重要的具有更新时间的概率模型 .通过小参数的引入和对概率式的幂展开 ,进而推证出幂渐近展开系数的模型估算法 .论证了无偏估计的重要定理 ,给出了概率估计式和无偏估计精度 .亦将许多算法扩展到Markov链的任意状态空间     

Herstein定理的推广

1955年Herstein将著名的Jacobson定理推广为:定理A.如果对R中任意x,y,存在可依赖于x,y的整系数多项式p(t),使[x-x2p(x),y]=0,则R是交换的.本文利用多项式的系数和定义了n元多项式,f(x1,x2…,xn)的Fk性质,并以此证明了一个环的交换性定理,当n=1时,即得到定理A.     

一类齐次对称多项式上的切比雪夫不等式

本文借助于控制不等式及数学归纳法，将著名的切比雪夫不等式推广到m次一般齐次对称多项式上(如文中定理及引理7)，并将此结果用于对称平均等．旨在展示证明解析不等式的一些有效的方法和技巧，同时为数学研究特别是高维几何研究提供一些新的有趣而有用的解析不等式．     

A completion of the spectrum for large sets of disjoint transitive triple systems

In this paper, we give a recursive construction from an LTTS(v + 2) to an LTTS(16v + 2) for v 3. Furthermore, the existence of LTTS(2ⁿ + 2) is proved. Thereby, we completely solve the existence problem of LTTS)(v) (large set of pairwise disjoint transitive triple systems of order v).     

The class number one problem for some non-abelian normal CM-fields of degree 48

We prove that there is precisely one normal CM-field of degree 48 with class number one which has a normal CM-subfield of degree 16: the narrow Hilbert class field of with .

     

Surface status and size influences of nickel nanoparticles on sulfur compound adsorption

Metallic nickel nanoparticles were incorporated on mesoporous silica to remove sulfur compounds in diesel selectively. In the first method, nickel nanoparticles were formed on mesoporous silica SBA-15 by impregnation and subsequent reduction of nickel nitrate. The sulfur adsorption capacity was strongly dependent on the nickel loading and the average nickel particle size. In the second method, nickel nanoparticles were synthesized in solution in the presence of a capping agent and then incorporated in mesoporous silica MCF by sonication. Although these particles maintain their sizes on the MCF surface after heat treatment, capping agent remaining on the Ni particle surface might interfere the adsorption of sulfur compounds.     

Stability of polymer thin-film transistors based on poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene)

Polymer thin-film transistors (PTFTs) based on poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) semiconductor are fabricated by spin-coating process and characterized. In the experiments, solution preparation, deposition and device measurements are all performed in air for large-area applications. Hysteresis effect and gate-bias stress effect are observed for the devices at room temperature. The saturation current decreases and the threshold voltage shifts toward the negative direction upon gate-bias stress, but carrier mobility hardly changes. By using quasi-static C-V analysis for MOS capacitor structure, it can be deduced that the origin of threshold-voltage shift upon negative gate-bias stress is predominantly associated with hole trapping within the SiO₂ gate dielectric near the SiO₂/MEH-PPV interface due to hot-carrier emission.     

J/psi production versus centrality, transverse momentum, and rapidity in Au+Au collisions at square root sNN=200 GeV

The PHENIX experiment at the BNL Relativistic Heavy Ion Collider (RHIC) has measured J/psi production for rapidities -2.2相似文献