Space charge limited electric currents in thin-film metal-InSb-metal structures

The VA characteristics of thin-film metal-InSb-metal structures are analyzed in the temperature interval from –100 °C to 140 °C, up to an electric field intensity ofE 2×10⁴ V/cm, on samples having an InSb resistivity of 10⁴ cm, and prepared by cathodic sputtering. In interpreting the VA characteristics, we start out from Lampert's theory on space charged limited electric currents, according to which the injection of carriers of one kind is considered and the mobility of the carriers depends upon the electric field intensity. Attention is drawn to the qualitative agreement of the experimental and theoretical results.     

Vapor pressure of selected aliphatic alcohols by ebulliometry. Part 2

Vapor pressures of six pentanols, 2-methyl-1-butanol (CAS Registry Number 137-32-6), 2-methyl-2-butanol (CAS Registry Number 75-85-4), 3-methyl-1-butanol (CAS Registry Number 123-51-3), 3-methyl-2-butanol (CAS Registry Number 598-75-4), 2-pentanol (CAS Registry Number 6032-29-7) and 3-pentanol (CAS Registry Number 584-02-1), were measured by the precision ebulliometry over an approximate pressure range from 9 to 99 kPa. The absolute uncertainties in pressure and temperature are estimated to be less than or equal to 7 Pa and 0.02 K, respectively. The results are represented by the Antoine equation and compared with available literature data.     

On the difference scheme for a nonlinear diffusion-reaction-type problem

Published in Lietuvos Matematikos Rinkinys, Vol. 33, No. 1, pp. 16–29, January–March, 1993.     

Non-uniqueness of the heat current operator and the hopping thermoelectric and Nernst-Ettingshausen effects in amorphous semiconductors

The Hardy correction in the heat current operator is generalized to the case of non-zero electron-phonon coupling constantg. It is then shown that not only the lowest (minus first) order but also the fist order contribution ing to the thermoelectric power of amorphous semiconductors in the hopping regime disappears. Consequently, since the lowest (zero) order contribution to the thermoelectric effects in the magnetic field yields no Nernst-Ettingshausen effect in these materials, the last effect is of the second order ing, at least.     

Spatial correlations and temperature dependence of the phonon-assisted hopping thermoelectric power in amorphous semiconductors

The assumption that the thermoelectric power of amorphous elemental semiconductors remains constant (in the hopping regime) down to zero temperature (which accords with some experiments on e.g. amorphous Ge performed above 100 K) is shown to be incompatible with the lowest order single-phonon hopping theory until the spatial interlevel correlations are taken into account.