磁控溅射技术制备ZnO透光薄膜

采用RF磁控溅射方法,在玻璃衬底上制备了择优取向的ZnO薄膜;通过台阶仪、X射线衍射技术、原子力显微镜和分光光度计分别测量了不同溅射功率条件下淀积的ZnO薄膜厚度(淀积速率)、结晶质量、表面形貌与粗糙度、透光光谱,报道了该薄膜结晶质量、薄膜粗糙度与其在可见光区透光率的关系.     

新试剂二溴氟基偶氮氟胂分光光度法快速测定热镀锌合金中微量铈

报道了新试剂DBF-FAsA的合成及其应用于测定锌合金中添加微量元素铈量的方法。在强酸性体系中铈与二溴氟基偶氮氟砷(DBF-FAsA)形成蓝紫色配合物,其最大吸收波长为624nm,表观摩尔吸光系数ε为1.20×105L·mol-1·cm-1,线性范围为0～1.0μg/mL。该法可用于锌合金或中间锌合金材料中微量铈的测定。     

BRD96N光调制吸收增强现象的实验研究

通过光谱响应特性实验和记录／读出图像实验，研究了基因变异型细菌视紫红质（BR_D96N）分子膜对单色光的光调制特性.发现BR_D96N分子膜在550nm—600nm范围内对调制光有吸收增强的现象，且对此范围内不同波长的单色光其调制程度有差异.利用曲线拟和方法发现550nm—600nm吸收增强的变化过程分为快过程和慢过程，其对应的时间常数分别为30s和5min.利用强度调制器的吸收强度与图像灰度之间的关系，分析了560nm—600nm范围内出现图像反转的实验现象. 关键词： 细菌视紫红质D96N分子膜 光谱响应 吸收增强现象 图像反转现象     

全固态多波长飞秒脉冲激光系统

利用棱镜对引进频谱空间啁啾来补偿飞秒脉冲激光二次谐波产生中的相位失配,提高了倍频效率建立了一套全固态、多波长(1065nm, 532nm,823.1nm, 402nm)飞秒脉冲激光系统自制的Nd:YVO4激光器输出532nm绿光激光,最高平均功率可达5.6W当用2.5W绿光激光泵浦时,从自制的钛宝石激光器及经BBO倍频可分别输出中心波长为823.1nm和402nm,平均功率300mW和73mW,谱宽32.3nm和5.1nm,脉宽22fs和33.3fs、重复率108MHz的近红外和蓝光激光整个系统具有结构紧凑、倍频效率高、运行稳定的特点.     

可允许集上的广义向量拟均衡问题

主要讨论可允许集上的广义向量拟均衡问题,推广L in的一些结果.     

牛顿弦截法预估校正迭代格式的收敛阶

研究如下形式的牛顿弦截法的预估校正(P.C.)格式:P(预估):~xk+1=xk-(xk-xk-1)f(xk)f(xk)-f(xk-1)C(校正):xk+1=xk-(~xk+1-xk)f(xk)f~(xk+1)-f(xk)证明了它的收敛阶为2.618.     

Gain Characteristics of Er^3＋-Doped Phosphate Glass Fibres

An erbium-doped phosphate glass fibre has been drawn by the rod-in-tube technique in our laboratory. The gain for the Er^3＋-doped phosphate glass fibre with different pump powers and with different input signal wavelengths is investigated. The 2.2-cm-long fibre, pumped by a single-mode 980-nm fibre-pigtailed laser diode, can provide a net gain per unit length greater than 1.SdB/cm. The pump threshold is about 50mW at the wavelength of 1534nm, and below 70roW at 1550nm. The gain linewidth of the Er^3＋-doped phosphate glass fibre is greater than 34 nm and can cover the C band in optical communication networks.     

Acoustic characterization and prediction for fan-duct-plenum-room integrations

This paper investigates mutual influence of duct and room acoustics in the whole fan-duct-plenum-room integrations. Applying the parametric design language of finite element software ANSYS (APDL), dimensional and positional influence on system acoustics has been studied. Models with different room dimensions, duct lengths, duct cross-sections, duct locations, duct discharges and duct elbow were constructed, and their characteristics were compared qualitatively. Results show that small rooms, short ducts, large duct cross-sections and bell mouth duct discharges help to increase room sound pressure levels (SPLs); SPLs in ducts and plenums are sensitive to duct dimensions and duct discharge types but insensitive to duct locations and room dimensions; duct elbows have relatively indistinct acoustic influence in each component. Based on the calculation results, a semi-experimental method was proposed for simply and approximately evaluating indoor acoustic spectra of fan-duct-plenum-room integrations, then an example was used to demonstrate the prediction process. Finally, by adopting several ideal models, sound field constitutions, duct and room wall admittances and duct end reflection were explored quantitatively. This study may give a detailed understanding of fan-duct-plenum-room acoustics for researchers, also it might provide a new, simple and approximate prediction method for professionals to evaluate and improve fan-ducted acoustics.     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

有界连通区域上Dirichlet空间及其算子

本文主要讨论了有界连通区域Dirichlet空间上Toeplitz算子的Fredholm性质,计算了符号在C1中的Toeplitz算子的本性谱和Fredholm指标．