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991.
We report on the shape transition from InAs quantum dashes to quantum dots (QDs) on lattice-matched GaInAsP on InP(3 1 1)A substrates. InAs quantum dashes develop during chemical-beam epitaxy of 3.2 monolayers InAs, which transform into round InAs QDs by introducing a growth interruption without arsenic flux after InAs deposition. The shape transition is solely attributed to surface properties, i.e., increase of the surface energy and symmetry under arsenic deficient conditions. The round QD shape is maintained during subsequent GaInAsP overgrowth because the reversed shape transition from dot to dash is kinetically hindered by the decreased ad-atom diffusion under arsenic flux.  相似文献   
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995.
The treatment of tertiary esters with triphenylphosphine and iodine under mild conditions gives the most stable alkene in good yield. Formates, acetates and trifluoroacetates were studied.  相似文献   
996.
It has been found that by the addition of low concentrations of an amphiphilic block copolymer to an epoxy resin, novel disordered morphologies can be formed and preserved through curing. This article will focus on characterizing the influence of the block copolymer and casting solvent on the templated morphology achieved in the thermoset sample. The ultimate goal of this work is to determine the parameters that would control the microphase morphology produced. Epoxy resins blended with a series of amphiphilic block copolymers based on hydrogenated polyisoprene (polyethylene-alt-propylene or PEP) and polyethylene oxide (PEO), specifically, were investigated. In this article, the cure-induced order–order phase transition from the spherical to wormlike micelle morphology will also be discussed. It is proposed that the formation of the wormlike micelle structure from the spherical micelle structure is similar to the phase transition behavior that occurs in dilute block copolymer solutions as a function of the influence of the solvent on micelle morphology. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 3338–3348, 2007  相似文献   
997.
We introduce a random perturbed version of the classical fidelity and we show that it converges with the same rate of decay of correlations, but not uniformly in the noise. This makes the classical fidelity unstable in the zero-noise limit.  相似文献   
998.
Formulas that include the contribution from dipole-distributed anomalous masses represented as layers distributed in height relative to the reference ellipsoid to the gravitational field in the quadratic approximation have been derived. The relationships between the expansion coefficients of some function and its square in terms of spherical functions have been established. The contribution from the relief masses and the density jump at the Mohorovicic discontinuity is used to illustrate the results.  相似文献   
999.
In this paper we describe the design and manufacture of an axial-torsion test specimen, and provide relationships needed when conducting stress-strain characterization experiments with the specimen. The specimen is a short hollow cylinder of rubber bonded between two steel mounting rings, in which simultaneous axial and shear strains are produced via independently controlled axial and twist displacements. We present calculations for the strain-displacement and stress-load relationships, and strain energy density. These relationships have been established and validated via a combination of analytical and experimental techniques, and finite element analysis. We have investigated the extent and effects of strain and stress field non-uniformity in the test specimen. The specimen design is sufficiently simple that a closed-form expression for the strain-displacement relationship has been successfully developed.  相似文献   
1000.
The hyperfine constants for muonium in elemental and binary inorganic solids suggest formation of three different families of defect centre, with distinct electronic structures. The overall range of values, spanning nearly five orders of magnitude, and their correlation with host properties such as band gap and electron affinity, reveal a deep-to-shallow instability which has profound implications for the electrical properties of hydrogen impurity in electronic materials, both semiconducting and dielectric.  相似文献   
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