A new model for automatic normalization of multitemporal satellite images using Artificial Neural Network and mathematical methods

Relative Radiometric Normalization is often required in remote sensing image analyses particularly in the land cover change detection process. Normalization process minimizes the radiometric differences between two images caused by inequalities in the acquisition conditions rather than changes in surface reflectance. A wide range of RRN methods have been developed to adjust linear models. This paper proposes an automated Relative Radiometric Normalization (RRN) method to adjust a non-linear model based on an Artificial Neural Network (ANN) and unchanged pixels. The proposed method includes the following stages: (1) automatic detection of unchanged pixels based on a new idea that uses CVA (Change Vector Análysis) method, PCA (Principal Component Analysis) transformation and K-means clustering technique, (2) evaluation of different architectures of perceptron neural networks to find the best architecture for this specific task and (3) use of the aforementioned network for normalizing the subject image. The method has been implemented on two images taken by the TM sensor. Experimental results confirm the effectiveness of the presented technique in the automatic detection of unchanged pixels and minimizing imaging condition effects (i.e., atmosphere and other effective parameters).     

Reductivity of the Lie Algebra of a Bilinear Form

Let f: V × V → F be a totally arbitrary bilinear form defined on a finite dimensional vector space V over a field F, and let L(f) be the subalgebra of 𝔤𝔩(V) of all skew-adjoint endomorphisms relative to f. Provided F is algebraically closed of characteristic not 2, we determine all f, up to equivalence, such that L(f) is reductive. As a consequence, we find, over an arbitrary field, necessary and sufficient conditions for L(f) to be simple, semisimple or isomorphic to 𝔰𝔩(n) for some n.     

XHSTT: an XML archive for high school timetabling problems in different countries

We present the progress on the benchmarking project for high school timetabling that was introduced at PATAT 2008. In particular, we announce the High School Timetabling Archive XHSTT-2011 with 21 instances from 8 countries and an evaluator capable of checking the syntax of instances and evaluating the solutions.     

Growth and investigation of antifungal properties of ZnO nanorod arrays on the glass

In this study, we have investigated the antifungal activity of ZnO nanorods prepared by the chemical solution method against Candida albicans. In the study, Zinc oxide nanorods have been deposited on glass substrates using the chemical solution method. The as-grown samples are characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). X-ray diffraction (XRD) showed zinc oxide nanorods grown in (0 0 2) orientation. The antifungal results indicated that ZnO nanorod arrays exhibit stable properties after two months and play an important role in the growth inhibitory of Candida albicans.     

Influence of Fano interference and incoherent processes on optical bistability in a four-level quantum dot nanostructure

Role of Fano interference and incoherent pumping field on optical bistability in a four-level designed In Ga N/Ga N quantum dot nanostructure embedded in a unidirectional ring cavity are analyzed. It is found that intensity threshold of optical bistability can be manipulated by Fano interference. It is shown that incoherent pumping fields make the threshold of optical bistability behave differently by Fano interference. Moreover, in the presence of Fano interference the medium becomes phase-dependent. Therefore, the relative phase of applied fields can affect the behaviors of optical bistability and intensity threshold can be controlled easily.     

Inverted organic solar cells with solvothermal synthesized vanadium-doped TiO_2 thin films as efficient electron transport layer

We investigated the effects of using different thicknesses of pure and vanadium-doped thin films of TiO_2 as the electron transport layer in the inverted configuration of organic photovoltaic cells based on poly(3-hexylthiophene) P3HT:[6-6] phenyl-(6) butyric acid methyl ester(PCBM). 1% vanadium-doped TiO_2nanoparticles were synthesized via the solvothermal method. Crystalline structure, morphology, and optical properties of pure and vanadium-doped TiO_2 thin films were studied by different techniques such as x-ray diffraction, scanning electron microscopy, transmittance electron microscopy, and UV–visible transmission spectrum. The doctor blade method which is compatible with roll-2-roll printing was used for deposition of pure and vanadium-doped TiO_2 thin films with thicknesses of 30 nm and 60 nm. The final results revealed that the best thickness of TiO_2 thin films for our fabricated cells was 30 nm. The cell with vanadium-doped TiO_2 thin film showed slightly higher power conversion efficiency and great J_(sc) of 10.7 mA/cm~2 compared with its pure counterpart. In the cells using 60 nm pure and vanadium-doped TiO_2 layers, the cell using the doped layer showed much higher efficiency. It is remarkable that the external quantum efficiency of vanadium-doped TiO_2 thin film was better in all wavelengths.     

A 3D-CMOS compatible silicon photo-sensor with a large vertical photosensitive area

This paper introduces design and simulation of a three-dimensional complementary metal–oxide–semiconductor CMOS compatible photo-sensor based on a silicon substrate. In the structure of photo-sensor, a vertical n+/p junction as a photosensitive area is formed on one side of a U-groove, and perpendicular to a lateral n-i-p structure on top-side of the silicon surface. This configuration enables a direct butt-coupling of a fiber-optic to the photosensitive area, which is a privilege for many remote monitoring applications. The device analysis is carried out by a two-dimensional simulation using SILVACO TCAD simulator. The thickness of the photo-sensitive area is investigated by considering the figures of merit for the two different thicknesses of 30 and 50 µm. The simulated results (according to the parameters defined for the Si substrate) show a very low dark current of 70 and 100 (fA/μm) for the 30 and 50 µm thicknesses, respectively. In addition, a high photo-current to dark current ratio of ~3000 is achieved under an intensity of 2 mW/cm² at 633 nm wavelength, according to the wavelength of red He–Ne laser. The sensor demonstrates a responsivity of 0.33 A/W corresponding to 65% external quantum efficiency and a ?3 dB frequency response of 0.2 GHz under a small signal of 2 mW/cm² at 633 nm wavelength for 10 V reverse bias.     

Engineering Multifunctional Gold Decorated Dendritic Mesoporous Silica/Tantalum Oxide Nanoparticles for Intraperitoneal Tumor‐Specific Delivery

Nonspecific high‐energy radiation for treatment of metastatic ovarian cancer is limited by damage to healthy organs, which can be mitigated by the use of radiosensitizers and image‐guided radiotherapy. Gold (Au) and tantalum oxide (TaO_x) nanoparticles (NPs), by virtue of their high atomic numbers, find utility in the design of bimetallic NP systems capable of high‐contrast computed tomography (CT) imaging as well as a potential radiosensitizing effect. These two radio‐dense metals are integrated into dendritic mesoporous silica NPs (dMSNs) with radial porous channels for high surface‐area loading of therapeutic agents. This approach results in stable, monodispersed dMSNs with a uniform distribution of Au on the surface and TaO_x in the core that exhibits CT attenuation up to seven times greater than iodine or monometallic dMSNs without either TaO_x or Au. Tumor targeting is assessed in a metastatic ovarian cancer mouse model. Ex vivo micro‐CT imaging of collected tumors shows that these NPs not only accumulate at tumor sites but also penetrate inside tumor tissues. This study demonstrates that after intraperitoneal administration, rationally designed bimetallic NPs can simultaneously serve as targeted contrast agents for imaging tumors and to enhance radiation therapy in metastatic ovarian cancer.     

Gain-bandwidth trade-off in a transistor laser: quantum well dislocation effect

The Authors report an analytical model to investigate optoelectronic characteristics reliance of a Transistor Laser on Quantum Well Location. Using simulated base recombination lifetime, optical frequency response for different quantum-well locations extracted. Slipping the well towards the collector, improves the optical bandwidth where a maximum of ≈54 GHz is observed. No resonance peak, limiting factor in diode lasers, is occurred in this enhancement method. Analyzing current gain (β) as a function of the quantum well location, exhibits a decrease in β when the well moved in the direction of the collector so that a trade-off between optical and electrical properties of transistor laser is evident. The trade-off is utilized in conjunction with previously reported experimental researches to find an optimum place of quantum well for desired performance.     

Anti-plane elastodynamic analysis of planes with multiple defects

The solution of a screw dislocation under time-harmonic condition is obtained in an infinite isotropic plane by means of the Fourier transform method. The stress components reveal the familiar Cauchy singularity at the location of dislocation. The solution is employed to derive integral equations for a plane weakened by cracks and cavities. Cavities are considered as closed curved cracks without singularity. Several examples are solved and the stress intensity factor of cracks and hoop stress on cavities are obtained.