时滞种群模型的正周期解对所有正解的吸引性

建立了对数种群模型Ｎ′（ｔ）＝Ｎ（ｔ）｛ｒ（ｔ）－ａ１（ｔ）ｌｎ［Ｎ（ｔ）］－ａ２（ｔ）ｌｎ［Ｎ（ｔ－τ（ｔ））］｝的周期正解的存在性，并得到了正周期解对所有正解的吸引性．     

Vibrational spectrum of uridine obtained by means of nonresonant-background-free CARS spectroscopy

Received: 18 June 1996/Revised version: 3 January 1997     

处理原子-辐射场相互作用系统的变分方法

用Heisenberg-Weyl(简H-W)群直积SU(2)群上的相干态表述了原子-辐射场相互作用系统的非平衡态统计力学.引入一个新定义的含时分布函数,将非平衡态下密度矩阵所满足的von Neumann方程转化成可分离变量的偏微分方程,给出了方程的形式解,算符的平均值表示.本文还就便于作微扰展开的相互作用绘景作了讨论.     

采用MSDI严格角动量投影46Ti、48Cr形变HF谱

采用修正的表面δ相互作用(MSDI),以球形壳模型单粒子态作基矢,对fp壳层区偶偶核⁴⁶Ti、⁴⁸Cr进行形变Hartree–Fock(HF)计算,并用形变HF单粒子态构造Slater行列式波函数,即形变HF内禀态,然后对其实施严格角动量投影程序,得到比较合理的结果.     

The magnetic entropy changes in Gd1−xBx alloys

A series of Gd_(1−x)B_x alloys have been prepared by arc melting method. After introducing small quantity of B atom in Gd, the Curie temperature of these alloys increase while the magnetic entropy changes are almost same as that of Gd. The refrigerant capacities of these alloys are also greater than that of Gd. These results suggest that Gd_(1−x)B_x alloys may be utilized as refrigerant in household magnetic refrigeration.     

γ-LiAlO2晶体生长、改性和热学性质研究

采用快速提拉法生长出了透明、完整的γ-LiAlO2晶体,但是晶体的高熔点和易挥发性限制了γ-LiAlO2晶体质量.采用气相传输平衡法(vapor transport equilibration technique,VTE)工艺对晶体改性,半高宽(FWHM)值从116.9arcsec降至44.2arcsec,继续升高VTE处理温度至1300℃,FWHM值反而升高至55.2arcsec.快速提拉法生长出来晶体,[100]方向和[001]方向的热膨胀系数分别为17.2398×10-6/K,10.7664×10-6/K.经过三步VTE处理后[100]和[001]方向热膨胀系数降至16.6539×10-6/K和10.1784×10-6/K.     

Application of N,N‐bis(diphenylphosphino)aniline palladium(II) complexes as pre‐catalysts in Heck coupling reactions

Palladium(II) complexes with N,N‐bis(diphenylphosphino)aniline ligands catalyse the Heck reaction between styrene and aryl bromides, affording stilbenes in good yield. The structures of two of the complexes used as pre‐catalysts have been determined by single‐crystal X‐ray diffraction. Copyright © 2007 John Wiley & Sons, Ltd.     

Temperature effect on deposition rate of silicon nitride films

Temperature effects on deposition rate of silicon nitride films were characterized by building a neural network prediction model. The silicon nitride films were deposited by using a plasma enhanced chemical vapor deposition system and process parameter effects were systematically characterized by 2⁶⁻¹ fractional factorial experiment. The process parameters involved include a radio frequency power, pressure, temperature, SiH₄, N₂, and NH₃ flow rates. The prediction performance of generalized regression neural network was drastically improved by optimizing multi-valued training factors using a genetic algorithm. Several 3D plots were generated to investigate parameter effects at various temperatures. Predicted variations were experimentally validated. The temperature effect on the deposition rate was a complex function of parameters but N₂ flow rate. Larger decreases in the deposition rate with the temperature were only noticed at lower SiH₄ (or higher NH₃) flow rates. Typical effects of SiH₄ or NH₃ flow rate were only observed at higher or lower temperatures. A comparison with the refractive index model facilitated a selective choice of either SiH₄ or NH₃ for process optimization.