环境气体种类对激光烧蚀粒子速度劈裂的影响

采用蒙特-卡罗(Monte Carlo)方法, 模拟了激光烧蚀粒子输运动力学过程, 在环境气体压强为100 Pa的情况下, 研究了环境气体种类(He, Ne, Ar和假想气体等)对烧蚀粒子速度劈裂的影响. 研究结果表明, 在四种环境气体中传输的烧蚀粒子均出现了速度劈裂现象, 形成速度劈裂所需时间按He, Ne, 假想气体和Ar的次序减小. 还研究了环境气体分子的质量和半径对烧蚀粒子速度劈裂的影响, 形成速度劈裂所需时间随环境气体分子半径(或质量)增大而减小. 在假想气体中, 两速度峰强度相等时的强度最小. 结合欠阻尼振荡模型和惯性流体模型, 对劈裂的形成时间进行了解释. 所得结论可为进一步定量研究纳米晶粒生长机理提供基础.     

碱土和过渡金属掺杂NdAlo3导电陶瓷的制备、结构与电性能研究

采用有机凝胶法结合后期高温烧结制备了较为致密的六方钙钛矿结构Nd0．9Sr0．1Al1-xO3—δ（M=Co,Fe,Mn;X=0,0．15,0．3,0．5）系列陶瓷,详细研究了过渡金属元素及掺杂量对其结构特征和电性能的影响．结果表明,凝胶前驱体在900。C焙烧5h可制得结晶良好且粒径较为细小的钙钛矿结构精细粉体,陶瓷体的晶格参数随过渡金属含量z的增加而增大,且按Co,Mn,Fe顺序递增;所有陶瓷样品在空气气氛中都是氧离子与电子空穴的混合导体,碱土金属Sr单掺杂NdAlo3的氧离子迁移数由500℃时的0．32单调增加到850℃时的0．63,其电导率随温度的升高由以电子电导为主逐渐转变为以离子电导为主;而Sr与过渡金属共掺杂样品的氧离子迁移数均在0．001以下,其电导率主要取决于P型电导,且随X的增加而增大,并按Mn,Fe,Co顺序递增,相应活化能的变化刚好与之相反,在所制备的样品中Nd0．9Sr0．1Al0．5Co0.5O3—δ具有最高的电导率（800℃时达到100．8S／cm）和最低的表观活化能（0．135eV）．在结构和电性能上所观察到的这些变化行为可根据掺杂过渡金属Co,Fe,Mn的离子半径及其金属一氧（M-O）键的键能和共价性的不同来进行解释．     

高斯光束经圆形光阑衍射的远场发散特性

线偏振高斯光束经圆形光阑衍射后,其远场可表示成互相正交的横电(TE)项和横磁(TM)项之和。利用TE项和TM项的远场能流分布,导出了高斯衍射光束的TE项和TM项远场功率的解析表达式,由此可度量TE项和TM项在远场占总功率的比例。基于能流二阶矩的定义,给出了高斯衍射光束、TE项和TM项远场发散角的解析式以及三者远场发散角间的关系通式,重点分析了f参数和截取参数对远场发散角的影响。结果表明:随着f参数的增大,远场发散角先增大后趋向于各自的饱和值。截取参数对远场发散角的影响与f参数相关,当f参数较大时,截取参数对远场发散角的影响不明显;当f参数适中时,随着截取参数的增大,远场发散角先减小后趋向于各自的最小值;但当f参数较小时,高斯衍射光束和TM项二者的远场发散角出现一定的波动性。     

采用密度泛函理论研究二甲基胺-二苯甲酮的分子内电荷转移激发态氢键

利用(含时)密度泛函理论研究了二甲基胺-二苯甲酮(DMABP)及其氢键二聚物DMABP-MeOH的光物理性质和弛豫动力学过程. 结果表明,在非极性和非质子性溶剂中,DMABP分子的第一和第二激发态跃迁同时具有局域激发和分子内电荷转移的特征;在极性质子性溶剂中,分子间氢键C=O…H-O的形成增加了这两个最低激发态之间的能量差,使DMABP-MeOH的第一激发态具有较强极性的分子内电荷转移特性. 通过计算DMABP和DMABP-MeOH分子的激发态构型弛豫势能曲线研究了激发态动力学弛豫过程. 结果表明,通过扭     

酮缺陷对中性和带电六卟啉芳香性影响的直接可视化研究

利用含时密度泛函理论研究了酮缺陷对中性和带电六卟啉芳香性的影响,并使用多维可视化技术给出了该体系基态电荷分布和电子跃迁的直观图像. 研究结果表明,芳香性是决定这类体系基态密立根电荷分布的主要因素;酮缺陷效应使得体系基态的密立根电荷分布更多地局域在六卟啉基团上,在这类体系的五氟苯基取代基上密立根电荷布居较少,同时使得体系的芳香性发生改变. 进一步,通过计算体系的跃迁密度和电荷差分密度,可视化了酮缺陷对中性和带电六卟啉芳香性的影响. 结果表明,酮缺陷加强了体系电荷转移的能力.     

Compact and efficient coupler to interface hybrid dielectric-loaded plasmonic waveguide with silicon photonic slab waveguide

A coupler is proposed to interface a hybrid dielectric-loaded plasmonic waveguide (HDLPW) with a silicon photonic slab waveguide. The HDLPW is firstly designed and optimized to attain the best tradeoff between the mode confinement and the propagation distance. The designed coupler is inspired from the taper configuration and numerically modeled through finite-difference time-domain (FDTD) simulation. The results demonstrate that a high confinement and low loss of the energy is achieved from a silicon photonic slab waveguide into the dielectric slot of area 50×200 nm² in the HDLPW. The transmission attained through the coupler with a compact size of 400 nm is found to be as high as 80% (1 dB). Further, the planar nature of taper configuration makes the coupler easy to fabricate using the state-of-the-art CMOS facilities. The proposed coupler is useful in enabling the integration between photonic and hybrid plasmonic waveguides and thus realizing on-chip hybrid integrated circuits.     

Using high haze (> 90%) light-trapping film to enhance the efficiency of a-Si:H solar cells

The high haze light-trapping (LT) film offers enhanced scattering of light and is applied to a-Si:H solar cells. UV glue was spin coated on glass, and then the LT pattern was imprinted. Finally, a UV lamp was used to cure the UV glue on the glass. The LT film effectively increased the Haze ratio of glass and decreased the reflectance of a-Si:H solar cells. Therefore, the photon path length was increased to obtain maximum absorption by the absorber layer. High Haze LT film is able to enhance short circuit current density and efficiency of the device, as partial composite film generates broader scattering light, thereby causing shorter wave length light to be absorbed by the P layer so that the short circuit current density decreases. In case of lab-made a-Si:H thin film solar cells with v-shaped LT films, superior optoelectronic performances have been found (V_oc = 0.74 V, J_sc = 15.62 mA/cm², F.F. = 70%, and η = 8.09%). We observed ~ 35% enhancement of the short-circuit current density and ~ 31% enhancement of the conversion efficiency.     

Domain,dielectric and optical studies in antiferroelectric (Pb,La) (Zr,Sn, Ti)O3 single crystals

Antiferroelectric (Pb, La) (Zr, Sn, Ti)O₃ (PLZST) single crystals have been successfully grown by flux method using PbO–PbF₂–B₂O₃ as the flux. The obtained crystals are pale yellow in color and translucent. Domain structures, dielectric constants and optical transmission measurements have been performed on the 〈001〉-oriented PLZST single crystals. Two types of domains, namely, 90° and 180° domains, are observed. The extinction of 90° domains at P/A: 0° reveals a tetragonal structure in the crystal. The sequence of phase transitions from antiferroelectric to ferroelectric and then paraelectric has been established with increasing temperature. According to the modified Curie–Weiss relationship, the PLZST crystal is in an intermediate state between normal and relaxor antiferroelectrics. The broad optical transparent region (from 0.4 to 7.0 μm) and high optical transmittance (up to 65%) indicate that PLZST crystals are promising for optical uses.     

Laser spot position dependence in photothermal mode cooling of a microcantilever

We explore the laser spot position (LSP) dependence of photothermal mode cooling in a microcantilever-based Fabry-Perot cavity. Experiments on photothermal cooling demonstrate that the direction of photothermal backaction on the first two cantilever modes is LSP dependent, which can be either parallel or antiparallel. A theoretical analysis of this LSP-dependent effect identifies the parallel and the antiparallel coupling regions along the lever. Simulation results are in quantitative agreement with our experimental observations. We conclude that the cooling limit imposed by photothermal mode coupling can be surmounted by operating in the parallel coupling region.     

Coherent detection of THz waves based on THz-induced time-resolved luminescence quenching in bulk gallium arsenide

A kind of photoluminescence quenching, in which the time-resolved photoluminescence is modulated by a THz pulse, has been theoretically investigated by performing the ensemble Monte Carlo method in bulk gallium arsenide (GaAs) at room temperature. The quenching ratio could reach up to 50% under a strong THz field (100 kV/cm). The range in which luminescence quenching is linearly proportional to the THz field could be over 60 kV/cm. On the basis of these results, a principle for THz modulation and coherent detection is proposed.