g-Natural Contact Metrics on Unit Tangent Sphere Bundles

We construct a three-parameter family of contact metric structures on the unit tangent sphere bundle T ₁ M of a Riemannian manifold M and we study some of their special properties related to the Levi-Civita connection. More precisely, we give the necessary and sufficient conditions for a constructed contact metric structure to be K-contact, Sasakian, to satisfy some variational conditions or to define a strongly pseudo-convex CR-structure. The obtained results generalize classical theorems on the standard contact metric structure of T ₁ M.     

The solution existence of general variational inclusion problems

We propose general variational inclusion problems which are slightly different from corresponding problems considered in several recent papers in the literature and show that they are advantageous. Sufficient conditions for the solution existence are established. As applications we derive consequences for several special cases of variational inclusion problems, quasioptimization problems, equilibrium problems and implicit variational inequalities and show that they improve the results of some recent existing papers.     

An invariance of geometric mean with respect to Lagrangian means

The invariance of the geometric mean G with respect to the Lagrangian mean-type mapping (Lf,Lg), i.e. the equation G○(Lf,Lg)=G, is considered. We show that the functions f and g must be of high class regularity. This fact allows to reduce the problem to a differential equation and determine the second derivatives of the generators f and g.     

Correlation between energy positions of deep intrinsic point-defect levels and a limiting fermi level in irradiated III–V semiconductors

The energy levels of neutral anion (V_A) and cation (V_C) vacancies and antisite defects are calculated for the anion C_A and cation A_C sublattices of III–V semiconductors. An averaged energy level position for these defects is estimated to be E_av ^abs = 4.9 eV. The position coincides with the local charge electroneutrality level. It is shown that the case, where the total energies of formation of V_A, V_C and antisite C_A, A_C defects in the sublattices of binary semiconductors are similar, corresponds to the point-defect equilibrium condition and stabilization of the Fermi level in the proximity of the local charge electroneutrality level. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 17–22, May, 2007.     

Langevin description of the charge distribution of fragments originating from the fission of excited nuclei

The charge distribution of fragments originatingfrom the fission of the ²³⁶U compound nucleus is calculated within a stochastic approach based on Langevin equations. The elongation coordinate, the neck-thickness coordinate, and the charge-asymmetry coordinate are chosen as collective variables. The friction parameter of the charge mode is calculated on the basis of two nuclear-viscosity mechanisms, that of one-body and that of two-body dissipation. It is shown that the Langevin approach is applicable to studying isobaric distributions. In addition, the charge distribution in question is studied as a function of the excitation energy of the compound nucleus and as a function of the coefficient of two-body viscosity.     

Relaxation contribution to shear moduli of the low-temperature phase of solid C60

The relaxation contribution of the molecular reorientation in an elastic field of an acoustic wave to the effective shear moduli is calculated in the framework of the phenomenological two-level model of orientational states in the low-temperature phase of solid C₆₀. The polarity of the rotation axis of C₆₀ molecules and the possible existence of orientational domains in the structure of the low-temperature phase are taken into consideration. The estimates obtained are compared with the available experimental data.