Bi2S3纳米复合材料的非线性光学性质

利用单光束 Z扫描技术 ,在波长为 1 .0 64μm、脉宽为 38ps条件下测定了不同热处理条件下表面包覆纳米 Bi2 S3 掺杂有机改性硅酸盐材料的三阶光学非线性。结果发现室温下自然干燥的样品和在 N2 气氛下 1 50℃加热处理 2小时后的样品的三阶光学非线性极化系数分别为5.8× 1 0 -1 3 esu和 3.7× 1 0 -1 2 esu。后者的三阶光学非线性极化系数比前者几乎大一个数量级。显然 ,适当的热处理能增强样品的三阶光学非线性。对此现象进行了分析和讨论。     

Temperature dependence of thermal properties of Ag<Subscript>8</Subscript>In<Subscript>14</Subscript>Sb<Subscript>55</Subscript>Te<Subscript>23</Subscript> phase-change memory materials

The dependence of thermal properties of Ag₈In₁₄Sb₅₅Te₂₃ phase-change memory materials in crystalline and amorphous states on temperature was measured and analyzed. The results show that in the crystalline state, the thermal properties monotonically decrease with the temperature and present obvious crystalline semiconductor characteristics. The heat capacity, thermal diffusivity, and thermal conductivity decrease from 0.35 J/g K, 1.85 mm²/s, and 4.0 W/m K at 300 K to 0.025 J/g K, 1.475 mm²/s, and 0.25 W/m K at 600 K, respectively. In the amorphous state, while the dependence of thermal properties on temperature does not present significant changes, the materials retain the glass-like thermal characteristics. Within the temperature range from 320 K to 440 K, the heat capacity fluctuates between 0.27 J/g K and 0.075 J/g K, the thermal diffusivity basically maintains at 0.525 mm²/s, and the thermal conductivity decreases from 1.02 W/m K at 320 K to 0.2 W/m K at 440 K. Whether in the crystalline or amorphous state, Ag₈In₁₄Sb₅₅Te₂₃ are more thermally active than Ge₂Sb₂Te₅, that is, the Ag₈In₁₄Sb₅₅Te₂₃ composites bear stronger thermal conduction and diffusion than the Ge₂Sb₂Te₅ phase-change memory materials.     

热致晶化高反射率SbOx薄膜的结构分析和光学性质

利用直流磁控反应溅射法制备了SbOx薄膜,利用X射线衍射分析仪和光谱仪分别研究了这种薄膜热致晶化的微观结构和光学性质的变化,并通过非晶态薄膜粉末的示差扫描量热实验测出不同加热速度条件下结晶峰温度,研究了这种薄膜的结晶动力学。发现沉积态SbOx薄膜为非晶态,非晶态SbOx薄膜在热致晶化过程中发生了两种变化,分别对应为较低温度下Sb晶体和较高温度下立方Sb2O3相的生成。退火后晶态薄膜中出现了单质Sb和Sb2O3,300℃退火后Sb2O3相含量最大。晶态薄膜的反射率均高于沉积态,在晶态薄膜中200℃退火的薄膜反射率最大。     

AgTCNQ衍生物旋涂膜绿光可擦重写光存储性质研究

报道了新型电子转移复合物AgTCNQ脂类衍生物：银-(2,5-二丙酸甲酯-7,7,8,8-四氰基对苯醌二甲烷)的旋涂薄膜的光谱特征、薄膜的静态绿光可擦重写光存储性能,并研究了薄膜的可擦重写机理。结果表明该薄膜在388nm和675nm处有两个源于复合物中阴离子自由基TCNQ(C2H4COOCH3)2^-中的电子跃迁的特征吸收峰;AgTCNQ酯类衍生物旋涂膜具有良好的绿光光存储性能,该薄膜在写入功率为9mW,写入脉冲为80ns,擦除功率为4mW,擦除脉冲为500ns时反射率衬比度大于15％,循环次数可达100次以上,并且没有出现任何疲劳现象。机理研究表明,AgTCNQ酯类衍生物与AgTCNQ有着相同的可逆光致变色机理,即在激光作用下因复合物中可逆电子转移引起薄膜光学性质的可逆变化,从而实现可擦重写光信息存储。     

氟锆酸盐玻璃(ZBLAN)中Nd3+和Er3+的紫外上转换发光

利用Ar离子激光器激发掺Nd³⁺和Er³⁺的氟化物玻璃,获得了近紫外的上转换发光.测量了上转换荧光的功率特性和浓度特性.阐述了紫外上转换的能级跃迁过程,并与理论作了对比.     

掺杂Nd对GdFeCo薄膜的磁光性能的影响

制备了三元GdFeCo合金薄膜和四元NdGdFeCo合金薄膜,测量了其磁饱和磁化强度对温度的依赖关系、磁滞回线以及可见光范围内的克尔谱.研究了轻稀土Nd掺杂对GdFeCo磁光薄膜的克尔旋转角的影响,发现在一定掺杂范围内能够有效提高薄膜在短波长下的克尔旋转角.掺入适量的轻稀土Nd可以使GdFeCo薄膜在短波长下的磁光性能提高,更好的适用于作为中心孔探测磁超分辨的短波长磁光读出层材料.     

Bias analysis for misclassification in a multicategorical exposure in a logistic regression model

We derive the expressions of asymptotic biases when ignoring the misclassification in a multicategory exposure. For a model with a misclassified exposure variable only, we provide a general conclusion on the direction of the biases under nondifferential misclassification assumption. To better understand the bias formulas, we use a numerical example.     

Spectroscopic Properties of Yb3+-doped Borate Glasses

The spectroscopic properties of Yb3+-doped some borate glasses have been determined from absorption and emission measurements at room temperature. The emission cross sections range from approximately 1.0 to 1.7 pm2. Systematic variations of the spectroscopic properties with glass composition and activator concentration can be used to optimize emission cross-sections and fluorescence lifetimes.     

Cr, Ca∶YAG晶体中四价Cr4+中心的晶场特性

综合分析了铬钙离子共掺钇铝石榴石晶体(Cr, Ca∶YAG)可见光-近红外区的室温吸收光谱, 其中四配位和六配位的四价Cr4+离子光谱成分是共存的, 拟合得到的晶场参数符合光谱学的理论和实验规律, 并且这两类Cr4+中心的晶场性质均受到晶体中二价补偿离子Ca2+的影响.     

Thermal and Optical Properties of Cyanine Dye for High Density Digital Versatile Disc-Recordable (DVD-R)

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