Electric field enhancement in guided-mode resonance filters

Electric fields inside guided-mode resonance filters (GMRFs) may be intensified by resonance effects. The electric field enhancement is investigated in two GMRFs: one is resonant at normal incidence, the other at oblique incidence. It is shown that the two GMRFs exhibit different behaviors in their electric enhancement. Differences between the electric field distributions of the two GMRFs arise because coupling between counterpropagating modes occurs in the first case. It is also shown that the order of the electric field of maximum amplitude can be controlled by modulation of the dielectric constant of the grating.     

Multichip vertical-external-cavity surface-emitting lasers: a coherent power scaling scheme

We propose an efficient coherent power scaling scheme, the multichip vertical-external-cavity surface-emitting laser (VECSEL), in which the waste heat generated in the active region is distributed on multi-VECSEL chips such that the pump level at the thermal rollover is significantly increased. The advantages of this laser are discussed, and the development and demonstration of a two-chip VECSEL operating around 970 nm with over 19 W of output power is presented.     

Laser-induced damage of Ta2O5/SiO2 narrow-band interference filters under different 1064 nm Nd:YAG laser modes

The laser-induced damage (LID) behavior of narrow-band interference filters was investigated with a Nd:YAG laser at 1064 nm under single-pulse mode and free-running mode. The absorption measurement of such coatings was performed with surface thermal lensing (STL) technique. The damage morphologies under the two different laser modes were also studied in detail. It was found that all the filters exhibited a pass-band-center-dependent absorption and laser-induced damage threshold (LIDT) behavior, but the damage morphologies were diverse. The explanation was given with the analysis of the electric field distribution and the operational behavior of the irradiation laser.     

The Modeling Library of Eavesdropping Methods in Quantum Cryptography Protocols by Model Checking

The most crucial issue of quantum cryptography protocols is its security. There exists many ways to attack the quantum communication process. In this paper, we present a model checking method for modeling the eavesdropping in quantum information protocols. So when the security properties of a certain protocol are needed to be verified, we can directly use the models which are already built. Here we adopt the probabilistic model checking tool—PRISM to model these attack methods. The verification results show that the detection rate of eavesdropping is approximately close to 1 when enough photons are transmitted.     

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利用Matlab语言将EFIT程序反演计算过程进行优化整合,简化了程序操作步骤,并增加了对计算结果的分析与存储功能。利用整合后的 EFIT 程序,计算分析了 J-TXET 装置放电过程中等离子体磁场位形和其它参数的演变,绘制了等离子体压强剖面图、等离子体电流密度和安全因子分布等磁面信息的重建结果。此外,还将反演结果与软X射线测算数据进行比对。结果表明,改善后的EFIT程序能够初步满足对实验放电的反演计算分析要求,为J-TXET装置的放电控制和运行提供重要的参考数据。     

基于双核模型对超重元素合成机制的研究

在双核模型基础上，考虑了熔合与准裂变的竞争，通过数值法求解主方程，计算了⁵⁰Ti，⁵⁸Fe+²⁰⁸Pb，²⁰⁹Bi这4个反应系统通过冷熔合反应合成超重元素的激发函数，得到了与实验比较符合的结果.计算了不同入射能量时各角动量分波对熔合概率和超重核存活概率的影响以及对蒸发剩余截面的贡献.这些结果对进一步理解超重核的合成机制有重要意义. 关键词： 超重元素 双核模型 熔合反应 蒸发剩余截面     

Laser-induced damage of high reflectors for Ti:sapphire laser system

A broadband (～ 176 nm, R ＞ 98%, λ0 = 800 nm) and high laser-induced damage threshold (LIDT =2.4 J/cm2) TiO2/HfO2/SiO2 high reflector (HR) for Ti:sapphire chirped-pulse amplification (CPA) laser system is fabricated by the electron beam evaporation. The refractive index and extinction coefficient of TiO2 and HfO2 films are calculated from single-layer films' transmittance spectra. The properties of HR are mainly determined by the high refractive index material. The high refractive index leads to wide bandwidth. A low extinction coefficient indicates low absorption and high LIDT. The possible damage mechanism of HR is discussed.     

圆窗片表面次级电子倍增效应的数值模拟

基于Monte Carlo模拟算法, 建立了粒子输运模型, 通过对盒形窗内圆窗片表面次级电子倍增现象进行数值仿真, 获得了TE₁₁模非均匀分布电场作用下次级电子倍增的规律. 结果表明: 在微波输入端, 指向窗片表面的磁场力起到了维持次级电子与窗片碰撞的作用, 在电场强度较高的区域倍增剧烈, 有质动力对倍增无贡献; 在微波输出端, 受背离窗片表面磁场力的影响, 在表面静电场较弱的情况下, 次级电子倍增不能发生; 当表面静电场足以维持单面倍增的发生, 随着传输功率的增大, 电子渡越时间增长, 有质动力使得倍增强烈的区域由强电场区逐渐转移到弱电场区域. 对利用外静电场抑制微波输入端次级电子倍增效应的方法进行了数值模拟验证. 关键词： 圆窗片 11模')" href="#">TE₁₁模 次级电子倍增 MonteCarlo模拟     

利用混沌信号幅值实现混沌同步

构造了一个三维混沌系统, 简要分析了该混沌系统的平衡点性质、混沌吸引子相图和Lyapunov指数等特性. 在此基础上, 利用反馈同步思想设计了一种利用混沌信号部分信息实现混沌同步的方法, 完成了三维混沌系统的同步. 该方法仅利用混沌信号幅值信息即可实现两个混沌系统的同步, 其同步建立与混沌信号的极性无关, 此特性可有效提高混沌通信质量. 通过分析系统的条件Lyapunov指数证实该方法的有效性, 数值仿真表明该方法与利用混沌信号全部信息的线性反馈同步法相比, 同步建立时间基本相同.