Marginal Distributions of Wigner Function in a Mesoscopic L-C Circuit at Finite Temperature and Thermal Wigner Operator

Wigner function in phase space has its physical meaning as marginal probability distribution in coordinate space and momentum space respectively, here we endow the Wigner function with a new physical meaning, i.e., its marginal distributions’ statistical average for q ²/(2C) and p ²/(2L) are the energy stored in capacity and in inductance of a mesoscopic L-C circuit at finite temperature, respectively. PACS numbers: 03.65.-w, 73.21.-b     

[5‐(p‐alkoxy)phenyl‐10, 15, 20‐tri‐phenyl] porphyrin and their rare earth complex liquid crystalline

Three series of porphyrin liquid crystalline compounds, [5‐(p‐alkoxy)phenyl‐10, 15, 20‐tri‐phenyl] porphyrin and their rare earth complexes (Tb (III), Dy (III), Er (III), Yb (III)), with a hexagonal columnar discotic columnar(Col_h) phase have been synthesized. These compounds were characterized by elemental analysis, molar conductances, UV‐visible spectra, infrared spectra, luminescence spectra, and cyclic voltammetry. These compounds exhibit more than one mesophases, which transition points of temperature change from ?33.6 to 16.0 °C, and transition points of temperature for isotropic liquid also increase from 4.9 to 38.2 °C, with increasing chain length. Their surface photovoltage (SPV) response have also been investigated by the means of surface photovoltage spectroscopy (SPS) and field‐induced surface photovoltage spectroscopy (EFISPS). It was found that their SPV bands are analogous with the UV‐visible absorption spectra and derived from the same transition. Copyright © 2007 John Wiley & Sons, Ltd.     

Spin asymmetry and s-electron itinerancy in Co/X (X=Co,Cu, V and Ta) multilayers: their dependence on the electronegativity of non-magnetic layers

The electronic structure and magnetic properties of the Co at the Co/X (X=Co, Cu, V and Ta) interfaces have been studied by first-principle discrete variational method. We have found that the spin asymmetry and the s-electron itinerancy of the Co interface layer in the Co/X systems are strongly dependent on the electronegativity of the non-magnetic layers. A large difference in the electronegativity between the non-magnetic and Co layers is unfavorable both for s-electron itinerancy and for the spin exchange split of DOS at the Fermi level. Further study on charge density has revealed that a bond is formed across the Co/V and Co/Ta interfaces.     

Hollow glass microspheres coated with CoFe2O4 and its microwave absorption property

Spinel CoFe₂O₄ coating on the surface of hollow glass microspheres of low density was synthesized by co-precipitation method. The phase structures, morphologies, particle size, shell thickness, chemical compositions of the composites have been characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and energy dispersive X-ray spectroscopy (EDS). The results show that CoFe₂O₄ coating on hollow glass microspheres can be achieved, and the coating layers are constituted by CoFe₂O₄ nanoparticles of mean size ca. 10 nm. The as-synthesized powder materials were uniformly dispersed into the phenolic cement, then the mixture was pasted on metal plate with the area of 200 mm×200 mm as the test plate. The test of microwave absorption was carried out by the radar-absorbing materials (RAM) reflectivity far field radar cross-section (RCS) method. The results indicate that the coated CoFe₂O₄/hollow glass microspheres composites can be applied in lightweight and strong absorption microwave absorbers.     

Synthesis and electrochemical characteristics of Ta-N thin films fabricated by cathodic arc deposition

Ta-N thin films were deposited on AISI 317L stainless steel (SS) substrates by cathodic arc deposition (CAD) at substrate biases of −50 and −200 V. The as-deposited films were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray analysis (EDX). The results show that stoichiometric TaN with hexagonal lattice (3 0 0) preferred orientation was achieved at the bias of −200 V. On the other hand, Ta-rich Ta-N thin film deposited at −50 V shows amorphous nature. According to the XPS result, Ta element in the films surface exist in bonded state, including the Ta-N bonds characterized by the doublet (Ta 4f_7/2 = 23.7 eV and Ta 4f_5/2 = 25.7 eV). Electrochemical properties of the Ta-N coated stainless steel systems were investigated using potentiodynamic polarization and electrochemical impedance spectroscope (EIS) in Hank's solution at 37 °C. For the Ta-N coated samples, the corrosion current (i_corr) is two or three orders of magnitude lower than that of the uncoated ones, indicating a significantly improved corrosion resistance. Growth defects in the Ta-N thin films produced by CAD, however, play a key role in the corrosion process, especially the localised corrosion. Using the polarization fitting and the EIS modelling, we compared the polarization resistance (R_p) and the porosity (P) of the Ta-N coatings deposited at different biases. It seems that Ta-N film with comparatively lower bias (−50 V) shows better corrosion behavior in artifical physiological solution. That may be attributed to the effect of ion bombarding, which can be modulated by the substrate bias.     

Ionization effect to plasma expansion study during nanosecond pulsed laser deposition

The dynamic characteristic and effects of plasma play an important role in film growth process of pulsed laser deposition (PLD). Based on numerical hydrodynamic modeling, supposed the laser radiation and partial ionization of the plasma as a dynamic source, we deduce a set of new plasma expansion dynamics equations. Based on which, as an example of carbon target, using finite difference method, the plasma flow dynamics evolvement in vacuum is investigated. Our results show the dynamic partial ionization increases the expansion in all directions, which changes into a new dynamic source for plasma expansion. In the axial direction, because of the collisional interactions between particles, the plume density peak is in the vicinity of the target surface and the acceleration of plasma occurs mainly near the target surface too. In the transverse direction, the plume peak is not near the target, but at the surface. The space expansion distance is far less than the axial direction because there is no high initial velocity component in this direction. The predictions of the plasma expansion action based on the proposed dynamics source assumption are found to be in agreement with the experimental observation.     

Optimization of thin-film design for multi-layer dielectric grating

Thin-film design used to fabricate multi-layer dielectric (MLD) gratings should provide high transmittance during holography exposure, high reflectance at use wavelength and sufficient manufacturing latitude of the grating design making the MLD grating achieve both high diffraction efficiency and low electric field enhancement. Based on a (HLL)⁹H design comprising of quarter-waves of high-index material and half-waves of low-index material, we obtain an optimum MLD coating meeting these requirements by inserting a matching layer being half a quarter-wave of Al₂O₃ between the initial design and an optimized HfO₂ top layer. The optimized MLD coatings exhibits a low reflectance of 0.017% under photoresist at the exposure angle of 17.8° for 413 nm light and a high reflectance of 99.61% under air at the use angle of 51.2° for 1053 nm light. Numerical calculation of intensity distribution in the photoresist coated on the MLD film during exposure shows that standing-wave patterns are greatly minimized and thus simulation profile of photoresist gratings after development demonstrates smoother shapes with lower roughness. Furthermore, a MLD gratings with grooves etched into the top layer of this MLD coating provides a high diffraction efficiency of 99.5% and a low electric field enhancement ratio of 1.53. This thin-film design shows perfect performances and can be easily fabricated by e-beam evaporation.     

Characterization of Cd1−xFexS diluted magnetic semiconductors grown at near phase conversion temperature

Fe-based cadmium sulfide alloy thin films have been grown on c-plane sapphire substrates by a low-pressure metalorganic chemical vapor deposition technique at different growth temperatures. From X-ray diffraction and absorption spectra of the samples, the evolutions with growth temperature show an inflexion at the growth temperature of 300 ^°C. This was attributed to the phase transformation from zinc-blende to wurtzite. With increasing growth temperature from 270 ^°C to 360 ^°C, Fe concentration in the films increases monotonously. The electronic states of Cd_1−xFe_xS were investigated by X-ray photoelectron spectroscopy. Magnetic measurement shows Van Vleck paramagnetism of the Cd_1−xFe_xS thin film in the temperature region below 7 K.     

Teleportation of an n-bit one-photon and vacuum entangled GHZ cavity-field state

A scheme for teleporting an arbitrary n-bit one-photon and vacuum entangled Greenberger-Horne-Zeilinger （GHZ） state is proposed. In this scheme, the maximum entanglement GHZ state is used as a quantum channel. We find a method of distinguishing four Bell states just by detecting the atomic states three times, which is irrelevant to the qubit number of the state to be teleported.     

Ag-SiO2复合薄膜形貌和吸收特性的研究

通过分层镀膜的方式制备Ag和SiO2的分层结构,经过快速热退火后,Ag颗粒扩散到复合薄膜的表面附近.通过改变Ag颗粒扩散的距离(SiO2的膜厚),可很好地控制Ag颗粒在复合薄膜表面附近的大小,浓度和形貌,进而对共振吸收特性产生影响.在实验中,根据Ag颗粒扩散的长度来调节退火的时间.发现经过足够长的时间(17.5 min)后,Ag颗粒会形成平行于衬底的平面团簇.由于Ag原子在平面团簇之间容易扩散,使得Ag颗粒的粒径平均值变小并趋于某一特定的半径,且粒径分布范围变小,导致吸收谱发生蓝移,吸收带变窄,且强度增加.