Structural and spectroscopic analysis of hot filament decomposed ethylene deposited at low temperature on silicon surface

The deposition of decomposed ethylene on silicon wafer at lower temperature using hot filament chemical vapor deposition (HFCVD) method was applied to compose thin film of carbon and its compounds with silicon and hydrocarbon structures. The films were analyzed using Raman spectroscopy, X-ray diffraction, and scanning electron microscopy with elemental microanalysis by energy dispersive X-ray spectrometer. The structure and morphology of the early stage of the film deposition was analyzed. The obtaining of SiC as well as diamond-like structure with this method and catalytic influence of chemical admixtures on the film structure and properties are discussed.     

Use of new composite materials for the determination of Cu, Cd, Mo, As, and Sb in biological samples by radiochemical neutron activation analysis

Summary  Vezetéknév     

Hindered motions in a ketonea-urea inclusion compound. An ESR and ENDOR study

We have studied by ESR and ENDOR spectroscopy the free radicals produced in γ-irradiated inclusion compound formed between the ketone 10-nonadecanone and urea. Only one type of long lived radical is formed by the removal of an α-proton from the ketone. The hyperfine (hf) coupling constants of the α- and β-protons of the radicals have been measured by ESR at different temperatures in the range 110–292 K and at different orientations of the crystals. The hf coupling of the γ-protons of the radical and of the urea protons have been studied by ENDOR. The temperature and angular dependences of the coupling constants have been analyzed in terms of the internal and overall motions of the radical inside the hexagonal channels formed by the urea molecules. It has been found that the radical cannot perform complete reorientations around the long molecular axis, but it undergoes restricted rotational diffusion. This process is explained by assuming a coupling between the rotational and translational degrees of freedom of the radical inside the urea channels.     

Band structures in73Se

Excited states of⁷³Se have been investigated up to spin, 21/2 using techniques of in-beamγ-ray spectroscopy in connection with the⁷⁰Ge(α, n) reaction. Mean lifetimes of 12 levels have been determined applying Doppler-shift andγ-RF-methods. Five different bands have been identified that reflect a variety of different excitation modes. The decoupled 9/2⁺ band is likely to correspond to an oblate deformation while the 5/2⁺ band is interpreted as a strongly coupled prolate band built on the Nilsson configuration [422] 5/2⁺. The 3/2^? band is a strongly coupled band built on the [301] 3/2^} configuration.Nuclear reactions:⁷⁰Ge(α,n),E=14, 16, 18, 19, 20MeV; measuredE _γ,I _γ,σ(E _γ,θ),γγ-coin, linear polarization, DSA,γ(t).⁷⁵Se deduced levels,I, π, τ, δ(E2/M1), B(σλ). Enriched targets, Ge detectors.     

Lasers at accelerators—past,present and future

The application of lasers at accelerators is reviewed with emphasis on laser spectroscopy of short-lived isotopes and the determination of nuclear spins, moments, and changes of charge radii in long isotopic chains leading far-off stability. Experimental techniques as well as future directions are discussed.     

Paramagnetic defects in BaTiO3 and their role in light-induced charge transport — Optical studies

On the basis of a previous identification of paramagnetic defects in nominally undoped as grown BaTiO₃ single crystals, we have investigated the changes of the concentrations of these centers and their optical absorptions under illumination with light of varying wavelengths. The most pronounced charge transfers occur by hole ionization of Fe⁴⁺ and — to a lesser extent — of Cr⁵⁺ and Cr⁴⁺. At low temperatures the created holes are trapped in the form of O^–-ions next to Al³⁺ or unknown acceptor defects. Corresponding Fe⁴⁺ and O^– absorptions have been identified.     

Eine Kennzeichnung der angeordneten Loops durch monotone Abbildungen

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