Real-time color holographic interferometry devoted to 2D unsteady wake flows

A new optical technique based on real time holographic interferometry in true colors has been implemented around the transonic wind tunnel of the ONERA-Lille center to analyze 2D unsteady wake flows. Tests realized in color interferometry, real time and double exposure, use simultaneously three wavelengths of a continuous waves laser (argon and krypton mixed) and holograms are recorded on silver-halide single-layer panchromatic Slavich PFG03c plates. The very principle of real-time true color holographic interferometry uses three primary wavelengths (red, green and blue) to record, under no-flow conditions, the interference among the three measurement beams and the three reference beams simultaneously on a single reference hologram. After the holographic plate is developed, it is placed on the test setup again in the position it occupied during exposure and the hologram is illuminated again by the three reference beams and three measurement beams. A flat, uniform color can then be observed behind the hologram. So a horizontal, vertical, or even circular fringe pattern can be formed and the achromatic central fringe can be made out very clearly. The single color is used to determine the path difference zero on the interferograms. The flow studied was the unsteady flow downstream of a cylinder placed crosswise in the test section. A sequence of hundred interferograms was recorded on the flow around the cylinder at Mach 0.37. The vortex formation and dissipation phases can be seen very clearly, along with the fringe beat to either side of the cylinder.     

Radiation effect on the 400-nm-thermoluminescence emission of a potassium-rich feldspar

The UV-blue thermoluminescence (TL) emission of exsolved and twinned potassium feldspars is potentially valid to be employed in the field of dating and retrospective dosimetry. This paper reports about the following results: (i) The dose dependence of the 400 nm TL intensity of a K-rich feldspar exhibits an excellent linearity in the range of 50 mGy–8 Gy. (ii) The stability of the TL signal after 6 months of storage, shows an initial rapid decay (ca. 45%) maintaining the stability from 40 days onwards which indicates that the electron population decreases asymptotically by the X-axis and the involved electrons are located in deeper traps at room temperature. The fading process can be fitted to a first-order decay equation of the sort y=y₀+A exp(−x/t). (iii) The tests of thermal stability at different temperatures confirm a continuous trap distribution with progressive changes in the glow curve shape, intensity and temperature position of the maximum peak. According to this behaviour some physical parameters are defined.     

The glow curve structure for the LiF:Mg,Cu,Na,Si TL detector with dopants concentrations and sintering temperatures

The glow curve structures for LiF:Mg,Cu,Na,Si TL detectors with various dopant concentrations and sintering temperatures were investigated for the improvement of the glow curve structure and sensitivity of the TL detector. The dopant concentrations were varied over the following ranges: Mg (0–0.25 mol%), Cu (0–0.07 mol%), Na and Si (0–1.5 mol%). With increasing Cu concentration, the intensity of the main peak was intensified and reached a maximum at a concentration of 0.05 mol%. The high-temperature peak was reduced. The dependency of the main peak intensity on the Mg concentration exhibits a sharp maximum at 0.2 mol%. The intensity of the high-temperature peak tends to rise slightly with increasing Mg concentration. It was found that the optimum concentrations of the dopants in the LiF:Mg,Cu,Na,Si TL material are Mg: 0.2 mol%, Cu: 0.05 mol%, Na and Si: 0.9 mol%. The dependency of the main peak intensity on sintering temperature exhibits a very sharp maximum at 830°C. The high-temperature peak was rapidly reduced after 825°C.     

Highly strained InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on In_xGa_(1−x)As−In_yAl_(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In_0.84Ga_0.16As/AlAs/In_0.52Al_0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In_0.84Ga_0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.     

Negative luminescence from mid-wave infrared HgCdTe diode arrays

A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 μm as a function of sample temperature. The internal efficiency at a wavelength of 4 μm was 93% at 295 K, and nearly independent of temperature in the 240–300 K range. This corresponds to an apparent temperature reduction >50 K at room temperature and >30 K at 240 K. Moreover, the reverse-bias saturation current density was only 0.13 A/cm². The measured transmission and emission spectra were simulated using empirical HgCdTe absorption formulas from the literature.     

Particle correlations in e + e − → W + W − events

Preliminary results are reported on the two-particle correlation function R(Q) in hadronic Z decays, fully hadronic WW decays, and mixed hadronic-leptonic WW decays using data collected by the DELPHI detector at LEP at energies between 189 and 206 GeV. Evidence for Bose-Einstein correlations was observed in all three cases. The event mixing technique was used to determine correlations between particles arisingfrom different W bosons in fully hadronic WW decays. An excess of like-sign particle pairs with low four-momentum difference in fully hadronic WW events is observed, consistent with the effect expected from correlations between identical particles from different W bosons.     

Local structure of Gd<Superscript>3+</Superscript> and Eu<Superscript>2+</Superscript> impurity centers in a CdF<Subscript>2</Subscript> crystal

The local crystal structure of Gd³⁺ and Eu²⁺ cubic impurity centers in cadmium fluoride is calculated within the shell model in the pair potential approximation. The local compressibility of the cationic and anionic sublattices of the host lattice is determined in the vicinity of the Gd³⁺ (Eu²⁺) impurity ion.     

Exact value of conjugate ion current in an electrolyte in the Gurevich-Kharkats diffusion-migration model

The exact solution of the problem of ion transport current in an electrolyte in the presence of a conjugate flow of solvent is obtained in the framework of the one-dimensional Gurevich-Kharkats diffusion-migration model; the conditions for the existence of the solution are analyzed.     

Perpendicular magnetic anisotropy in single-crystal Co<Subscript>50</Subscript>Pt<Subscript>50</Subscript>/MgO(100) films

The crystal structure and hysteretic magnetic properties of equiatomic single-crystal CoPt films applied on MgO substrates by magnetron sputtering, as well as modification of these properties by thermal annealing, are studied. Heat-treated films of thickness in the range 2<d≤16 nm exhibit perpendicular magnetic anisotropy. A correlation between the crystalline anisotropy constant of the CoPt films and the order parameter of the LI₀ superstructure in these alloys is found. The effect of a single-crystalline MgO substrate on the structure and magnetic properties of equiatomic CoPt films is revealed.