Electronic and mechanical properties of ZnS nanowires with different surface adsorptions

We investigate the energetic, electronic, and mechanical properties of the pristine, hydrogen, and water adsorbed ZnS nanowires using the all-electron density functional theory. We found that water adsorption is energetically favorable and makes the band gap change from indirect to direct for the smallest nanowire. The Young's moduli of the pristine and water adsorbed nanowires are larger, but those of the hydrogen adsorption nanowires are smaller than that of bulk ZnS. The physical origin of the different tendencies can be attributed to the different surface relaxations of three kinds of ZnS nanowires.     

HLT500高低温试验箱PLC控制系统

介绍了以PLC(可编程控制器)为核心的高低温试验箱电控系统,着重介绍了可编程逻辑控制器PLC的选择和可编程控制器的程序编译。     

129I加速器质谱分析研究

通过对129I加速器质谱(AMS)分析中影响敏度和准确度各种参数的研究,如靶电极制备、压样、靶样中辅助介质（Matrix）的选择及使用比例等,优化了用于3 MV加速器质谱仪的SO-110型离子源的条件参数,确定129I-AMS测量的最佳靶电极材料为Cu,最佳的辅助介质为Nb粉末,Nb与AgI样品的最佳体积比为3∶1。在此条件下可以获得稳定且持续的I-束流进行测量129I/127I原子比值,实验测得西安加速器质谱仪的129I/127I本底值为1.5210-14。     

空间振幅调制光谱偏振测量技术研究

空间振幅调制光谱偏振测量技术通过由光楔、偏振片组成的调制模块,将目标的偏振信息调制到与光谱维垂直的空间维,单次测量即可同时获取目标的偏振信息和光谱信息。首先阐述空间振幅调制光谱偏振测量技术的基本原理,然后利用空间调制光谱偏振仿真软件进行理论仿真,并且给出了具体的实验研究方案,通过对比理论模拟图像和实验图像,验证实验的可靠性。以Q=0,U=1,V=0和Q=1,U=0,V=0作为入射偏振光进行实验,在波长范围500～600 nm采样10组数据,利用最小二乘法对实验输出的偏振光进行偏振解调。结果表明：解调后入射光的线偏振度与参考入射光的误差值分别小于2.5%和4%,偏振角误差值小于1.8%和2%,验证了实验和算法的可行性,并对两组复合光楔中心误差对偏振测量的影响作了简要分析,结果表明中心误差对偏振分量Q和V的测量影响较大。     

First-Principles Calculations of Electronic Structures of New Ⅲ-Ⅴ Semiconductors： BxGa1-xAs and TlxGa1-xAs alloys

We investigate the electronic structures of new semiconductor alloys BxGa1-xAs and TlxGa1-xAs, employing first-principles calculations within the density-functional theory and the generalized gradient approximation. The calculation results indicate that alloying a small TI content with GaAs will produce larger modifications of the band structures compared to B. A careful investigation of the internal lattice structure relaxation shows that significant bond-length relaxations takes place in both the alloys, and it turns out that difference between the band-gap bowing behaviours for B and TI stems from the different impact of atomic relaxation on the electronic structure. The relaxed structure yields electronic-structure results, which are in good agreement with the experimental data. Finally, a comparison of formation enthalpies indicates that the production Tlx Ga1-xAs with TI concentration of at least 8% is possible.     

A Simple Hydrothermal Method for the Growth of ZnO Crystals

ZnO microstructures have been grown from zinc chloride (ZnCl₂) and ammonia solution at 100 °C for 1 – 24 hours. X‐ray diffraction, scanning electron microscope and field‐emission scanning microscope were utilized to investigate the structural properties and morphology of the ZnO crystals. Structural investigations show that phase‐pure hexagonal structure ZnO has been successfully synthesized, and the hexagonal structure ZnO can be achieved in solutions with an appropriate range of concentrations. Under our experimental conditions, several different morphologies of ZnO structures were obtained, including flower‐like and bar flower‐like. The relationship between the morphology and experimental conditions are discussed.     

Defect-induced failure of optical coating filters

Optical filters composed of Ag, Al₂O₃, and ZnSe films were prepared on BK7 substrates by evaporation. By employing spectrophotometer, microscope, scanning electron microscope (SEM), and energy dispersive spectrum (EDS) analysis, the moisture-dependent stability of the samples was tested. The experimental results revealed that filter failure often occurs initially at defect sites. Small sputtering particles and pinhole are found to be two types of defects that induced the optical coating filter failure. The mechanisms of the defect-induced failure of the filters also are discussed in the article.     

铌酸锂晶体中的磁光折变效应研究

对于掺铁铌酸锂晶体中不同全息记录配置下的磁光折变效应做了比较系统的理论分析，给出了铌酸锂晶体所有的磁光生伏打非零张量元. 详细计算并给出了不同全息纪录配置下的所有体光生伏打、磁光生伏打电流的解析形式. 理论结果表明，由于磁光生伏打效应引起了光激发电流的变化，所以对于每种配置全息光栅的衍射效率都会受到外加磁场的影响；对于不同的全息记录配置，磁场对铌酸锂晶体光折变非线性性质的影响也不同.讨论了一种确定特定张量元的方法. 关键词： 磁光生伏打 磁光折变效应 光生伏打     

Configuration of the valence neutrons of 17B

The reaction cross section of ~(17)B on ~(12)C target at(43.7±2.4)MeV/u has been measured at the Radioactive Ion Beam Line in Lanzhou(RIBLL).The root-mean-square matter radius(R_(rms))was deduced to be(2.92±0.10)fm,while the R_(rms)of the core and the valence neutron distribution are 2.28 fm and 5.98 fm respectively.Assuming a"core plus 2n"structure in ~(17)B,the mixed configuration of(2s_(1/2))and(1d_(1/2))of the valence neutrons is studied and the s-wave spectroscopic factor is found to be(80±21)%.     

ELDRS and dose-rate dependence of vertical NPN transistor

The enhanced low-dose-rate sensitivity (ELDRS) and dose-rate dependence of vertical NPN transistors are investigated in this article.The results show that the vertical NPN transistors exhibit more degradation at low dose rate,and that this degradation is attributed to the increase on base current.The oxide trapped positive charge near the SiO2-Si interface and interface traps at the interface can contribute to the increase on base current and the two-stage hydrogen mechanism associated with space charge effect can well explain the experimental results.