A Bifunctional Photosensitizer for Enhanced Fractional Photodynamic Therapy: Singlet Oxygen Generation in the Presence and Absence of Light

The photosensitized generation of singlet oxygen within tumor tissues during photodynamic therapy (PDT) is self‐limiting, as the already low oxygen concentrations within tumors is further diminished during the process. In certain applications, to minimize photoinduced hypoxia the light is introduced intermittently (fractional PDT) to allow time for the replenishment of cellular oxygen. This condition extends the time required for effective therapy. Herein, we demonstrated that a photosensitizer with an additional 2‐pyridone module for trapping singlet oxygen would be useful in fractional PDT. Thus, in the light cycle, the endoperoxide of 2‐pyridone is generated along with singlet oxygen. In the dark cycle, the endoperoxide undergoes thermal cycloreversion to produce singlet oxygen, regenerating the 2‐pyridone module. As a result, the photodynamic process can continue in the dark as well as in the light cycles. Cell‐culture studies validated this working principle in vitro.     

Lagotoside: A New Phenylpropanoid Glycoside from Lagotis stolonifera

From the aerial parts of Lagotis stolonifera (Scrophulariaccae), a new phenylpropanoid glycoside, lagotoside ( 8 ), and the three known glycosides ehrenoside ( 5 ), verbascoside (= acteoside; 6 ), and plantamajoside ( 7 ) were isolated, together with the four known iridoid glucosides aucubin ( 1 ), catalpol( 2 ), globularin ( 4 ), and lythantosalin ( 3 ). The structure of the new compound 8 was elucidated on the basis of chemical and spectral data as 2-(3-hy-droxy-4-methoxyphenyl)ethyl O-[α-L -arabinopyranosyl-(1 → 2)]-O-[α-L -rhamnopyranosyl-(1 → 3)]-4-O-feruloyl-β-D -glucopyranoside.     

Measuring stresses in thin metal films by means of Raman microscopy using silicon as a strain gage material

Mechanical stresses in microelectronics and micro‐electromechanical systems may influence the reliability of applications and devices. The origin of the stresses can be because of the joining of dissimilar materials with regard to the thermal expansion coefficient, electromigration or the deposition process utilized. Stresses can lead to delamination, crack formation and stress migration and therefore to a failure of the device. Identifying the locations of highest stresses in a device is crucial for reliability improvement. Currently, both Laue X‐ray micro diffraction and convergent‐beam electron diffraction are able to locally determine the stresses in thin metal films. Here, we propose a modified method of indirect Raman microspectroscopy to measure stresses with a lateral resolution in the submicrometer range at a laboratory scale. The method encompasses the crystallization of an amorphous silicon layer by local laser annealing and its subsequent usage as a strain gage. Stresses in an aluminum thin film were determined as a function of temperature. In addition to the average stress, the stress distribution could be monitored. Copyright © 2009 John Wiley & Sons, Ltd.