丝电爆过程的电流导入机理

丝电爆制备纳米粉时, 电流从电极导入金属丝的过程直接影响电极烧损和粉末中微米级大颗粒产生. 分别通过接触和气体放电两种方式导入电流进行电爆试验. 结果表明, 光测量装置检测到的丝端部光电流几乎与回路放电电流同时产生, 而中间位置的光电流则要滞后一段时间; 由探针收集的产物确定, 金属丝端部主要形成熔融粒子, 中间部分主要形成气相粒子. 分析可知, 接触方式导入电流时, 丝端部也存在气体放电现象, 大电流主要通过气体放电形成的等离子体导入. 等离子体对电流的旁路作用会阻碍能量向金属丝沉积, 这是产生微米级大颗粒和"积瘤"主要原因. 通过气体放电方式导入电流时, 电极烧损明显减轻, 并可以避免"积瘤"产生.     

寄生虚反射对外差干涉椭偏测量的影响

研究了一种采用横向塞曼激光器并且没有任何运动部件的外差干涉椭偏测量系统。由非理想的激光源、偏振分光镜等器件所产生的非线性误差,是影响纳米测量精度的主要因素。采用琼斯矢量法,分析并建立了光学系统寄生虚反射所引入的误差模型,讨论了虚反射对误差漂移的影响。在不考虑其它误差因素的前提下,同一光路内部产生的同频率虚反射波对测量结果没有影响;而不同频率的参考光束与测量光束之间的交叉虚反射所产生的膜厚测量误差为亚纳米量级。讨论了消除和抑制虚反射误差的方法。     

高压静电场促进植物生长技术的研究

高压静电场促进植物生长技术源于自然又高于自然 ,它包括静电种子处理和静电场生长环境等技术 .文章论述了该技术的实施方法 ,并报道了已经取得的初步成果 .     

Harmonic operation of high gain harmonic generation free electron laser

In high gain harmonic generation (HGHG) free electron laser (FEL), with the right choice of parameters of the modulator undulator, the dispersive section and the seed laser, one may make the spatial bunching of the electron beam density distribution correspond to one of the harmonic frequencies of the radiator radiation, instead of the fundamental frequency of the radiator radiation in conventional HGHG, thus the radiator undulator is in harmonic operation (HO) mode. In this paper, we investigate HO of HGHG FEL.Theoretical analyses with universal method are derived and numerical simulations in ultraviolet and deep ultraviolet spectral regions are given. It shows that the power of the 3rd harmonic radiation in the HO of HGHG may be as high as 18.5% of the fundamental power level. Thus HO of HGHG FEL may obtain short wavelength by using lower beam energy.     

离子交换LiNbO_3:Fe平面光波导中两波混合的研究

本文利用耦合波理论分析推导了单模平面光波导中两波混合的耦合波方程和弱相干光放大率的表示式.并且,在LiNbO_3:Fe单模平面光波导中进行了两波混合的实验研究,得到了与理论分析相符合的结果.     

Research on surface photovoltage spectroscopy for GaAs photocathodes with AlxGa1-xAs buffer layer

Surface photovoltage spectroscopy equations for cathode materials with an AlxGa1-x As buffer layer are determined in order to effectively measure the body parameters for transmission-mode (t-mode) photocathode materials before Cs-O activation.Body parameters of cathode materials are well fitted through experiments and fitting calculations for the designed AlxGa1-x As/GaAs structure material.This investigation examines photo-excited performance and measurements of body parameters for t-mode cathode materials of different doping structures.It also helps study various doping structures and optimize structure designs in the future.     

微纳尺度光纤布拉格光栅折射率传感的理论研究

亚波长直径微纳光纤强倏逝场传输的光学特性,使其对周围介质折射率的变化具有极高的灵敏度.本文提出一种基于微纳尺度光纤布拉格光栅(MNFBG)的折射率传感器,结合微纳光纤倏逝场传输和光纤布拉格光栅(FBG)强波长选择的特性来实现高精度折射率传感,对其制备可行性进行了讨论.论文中对MNFBG折射率传感机理进行了深入的理论分析,并使用OptiGrating软件进行了数值模拟,模拟数据显示MNFBG折射率测量的灵敏度随着光纤半径的减小而增加,其中光纤半径为400 nm的MNFBG灵敏度可达到993 nm/RIU,相比于包层蚀刻的FBG灵敏度增加了170倍,说明MNFBG对发展微型化、高灵敏度折射率传感器具有良好的应用前景. 关键词： 微纳光纤 光纤布拉格光栅 折射率传感     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

一种蓝色聚合物激光材料

聚合物作为一种有机发光材料,由于在平板显示和光电子器件中的良好应用前景而受到广泛研究［１～２］．近年来,一个重要进展是在聚合物中观测到了受激发射（简称Ｐｏｌｙ－ｍｅｒ激光）现象［３～６］．Ｐｏｌｙｍｅｒ激光最早是在溶液中实现的［３～４］．作为一种新型...     

利用宇宙线对BESⅢ量能器CsⅠ（Tl）晶体探测器单元的测量

利用宇宙射线进行探测器模型的性能测试是高能物理普遍采用的方法，其中最重要的步骤之一就是确定宇宙线入射的准确位置和径迹．多数采用丝室探测器来进行宇宙线的精确定位，需要很高的造价和复杂的电子学系统．本文介绍一种简单的定位方法，采用塑料闪烁体条加波移剂光纤编码读出的方式，可以实现精度为1cm的定位．据此建立了一套实验装置，对BESⅢ电磁量能器CsⅠ（Tl）晶体探测器单元的光输出强度和不均匀性进行了测量．