岸基光电探测系统

论述两类岸基光电探测系统；岸基光电跟踪仪和岸基红外监视系统。阐述其典型实例、特点及发展方向。     

应力对M-Z型InP/InGaAsP-EAM偏振

采用Agilent 81910A光子全参量测试仪,首次实验研究了InP/In1－xGaxAs1－yPy-MQW（Multiple-Quantum-Well,MQW）材料与衬底间因应力而产生的M-Z型光调制器的PDL影响以及由此引起的由差分群时延(Differential Group Delay,DGD)表征的偏振模色散(Polarization Mode Dispersion,PMD).研究结果表明,半导体MQW光调制器的PDL与DGD是一致的.因此在半导体光器件的制作过程中,应尽可能地减小衬底与波导芯层之间的因残存应力的存在造成对光器件的高速性能的不利影响.     

匀速运动的电偶极子的电场和磁场分布

本文通过对电偶极子电磁势的分析和相对论下电磁场在不同惯性系中的协变分布，计算了作匀速直线运动的电偶极子的电场和磁场的空间分布．     

具Hardy-Sobolev临界指数的奇异椭圆方程多解的存在性

运用变分方法研究了下面问题-Δpu=μupx(s)s-2u f(x,u),x∈Ω,u=0,x∈Ω,多重解的存在性,其中Ω是一个具有光滑边界的有界区域.     

Sparse polynomials, redundant bases, gauss periods, and efficient exponentiation of primitive elements for small characteristic finite fields

Gauss periods give an exponentiation algorithm that is fast for many finite fields but slow for many other fields. The current paper presents a different method for construction of elements that yield a fast exponentiation algorithm for finite fields where the Gauss period method is slow or does not work. The basic idea is to use elements of low multiplicative order and search for primitive elements that are binomial or trinomial of these elements. Computational experiments indicate that such primitive elements exist, and it is shown that they can be exponentiated fast.     

推广x重新标度模型的重标度参数经验公式

给出了推广x重新标度模型的重标度参数经验公式,其中建立了重标度参数与原子核的平均结合能之间的联系,由该公式可以得出A≥12的所有核的重标度参数值,利用这些参数值可以计算有关核过程并做出预言.     

时间分辨光子计数系统的研究和应用

对由SPCM-AQR-14和MCS组成的时间分辨光子计数系统进行了研究,分析了SPCM和MCS的工作原理及主要特性.利用该系统对磷光物质和洋葱的延迟发光进行了测量,对它们的光子计数率曲线进行拟合,发现其光强衰减符合双曲线规律.     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

Ce3+对Er3+/Yb3+共掺氟磷酸盐玻璃光谱性质的影响

研究了能量接受离子Ce3+对Er3+上转换发光强度以及Er3+在1.5 μm附近波段发光性能参数的影响,并从能量匹配及能级结构角度出发对Er3+/Ce3+间的能量转移机制进行了分析.分析认为,4 I11/2能级的Er3+通过无辐射能量转移把能量传递给2F5/2能级的Ce3+激发其跃迁至2F7/2能级,而4I11/2能级上的Er3+则无辐射弛豫至4I13/2能级,从而有效降低氟磷酸盐玻璃中Er3+的上转换发光.当Er3+浓度为1.11×1020 cm-3时,Ce3+的最佳掺杂浓度为2.22×1020 cm-3,此时Ce3+的引入不仅可以降低上转换发光,而且有助于提高Er3+在1.5 μm附近波段的荧光强度、发射截面以及4I13/2能级荧光寿命.     

Timing and detuning studies of a synchronously pumped mode-locked dye laser

The timing relationship between a synchronously pumped mode-locked dye laser and its pump laser is explored experimentally and theoretically. The experimental data is in quantitative agreement with numerical solutions of a semiclassical model that includes no free parameters. The data also agrees qualitatively with an approximate, analytic distillation of this model which is presented here for the first time. Our study has a direct bearing on the jitter and the long term stability of these important ultrashort pulse lasers.