光辅助超高真空CVD系统制备SiGe异质结双极晶体管研究

介绍了采用紫外光化学汽相淀积(UVCVD)、超高真空化学汽相淀积(UHVCVD)和超低压化学汽相淀积(ULPCVD)技术研制的化学汽相淀积(CVD)工艺系统,简称U³CVD系统.应用该系统,在450℃低温和10^-7Pa超高真空环境下研制出了硅锗(SiGe)材料和硅锗异质结双极晶体管(SiGe HBT)材料.实验表明,该系统制备的SiGe HBT材料性能良好.     

The Cauchy Problem of the Nonlinear Schr■dinger Equations in R~(1 1)

In this paper,we consider the local and global solution for the nonlinear Schrdinger equationwith data in the homogeneous and nonhomogeneous Besov space and the scattering result for small data.Thetechniques to be used are adapted from the Strichartz type estimate,Kato's smoothing effect and the maximalfunction(in time)estimate for the free Schrdinger operator.     

激光磁共振用于对NO_2分子的定量测量

本文叙述了采用CO激光磁共振方法对NO_2分子作定量测量,给出了激光磁共振信号幅度的数学表达式以及信号与分子浓度、激光功率等实验参数之间的依赖关系,实验结果与理论分析一致。     

Annealing and measurement temperature dependence of W2B5-based rectifying contacts to n-GaN

The thermal stability and measurement temperature dependence of Schottky contact characteristics on n-GaN using a W₂B₅/Ti/Au metallization scheme was studied using current-voltage (I-V), scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) measurements. The elemental profile obtained from samples annealed at 350 °C showed some titanium diffusion into the gold layer but little other difference from the as-deposited wafer. Annealing at 700 °C produced significant diffusion of titanium. The Schottky barrier height increased with anneal temperature up to 200 °C, reaching a maximum value of 0.65 eV, but decreased at higher annealing temperatures. The reverse breakdown voltage from diodes fabricated using the W₂B₅-based contacts showed a similar dependence. The reverse current magnitude was larger than predicted by thermionic emission alone. The barrier height showed only minor changes with measurement temperature up to 150 °C.     

基于P-N结的太阳能电池伏安特性的分析与模拟

通过分析实际P-N结与理想模型之间的差别,建立了P-N结二极管及太阳能电池的数学模型;利用Matlab中的系统仿真模块库建立仿真模型,设置参量,求解模型方程并绘制了图形.对太阳能电池在一定光照下旁路电阻及串联电阻取不同数值时对其开路电压、短路电流及填充因子的影响做了模拟,并与实际测得的硅太阳能电池伏安特性进行了比较.模型分析与实验测量的结果表明:等效的旁路电阻和串联电阻分别影响电池的开路电压和短路电流.仿真结果与实验测量结果一致.     

300kVA高温超导变压器电流引线漏热损耗的测量

电流引线是高温超导变压器的主要外部漏热来源,它的漏热量直接影响了超导变压器的经济性能,因此,引线的设计与漏热测量一直备受关注。文中构建了一个实验方案,运用量热法测量低压引线的漏热,并将试验结果与仿真预期值进行了对比和分析,从而验证了仿真设计的正确性。     

LD抽运Cr~(4 )∶YAG高重复率被动调QNd∶YVO_4激光器

采用Cr4 ∶YAG晶体作为可饱和吸收体,实现连续激光二极管(LD)端面抽运的Nd∶YVO4激光器的高重复率被动调Q·在注入抽运功率为8.8W时,得到重复频率23.8kHz、平均功率1.21W的调Q脉冲序列;每个脉冲能量为51μJ、脉宽为25ns、峰值功率达到2.03kW·实验上研究了脉冲重复频率、平均输出功率、脉冲宽度、单脉冲能量与抽运功率、输出镜透过率的关系·实验结果表明,当抽运功率较大时,脉冲重复频率和输出平均功率随着抽运功率的增加而减小,对此进行了合理的理论解释·     

Study on anti-emission materials for non-emitting grid applications in microwave power tubes

Hafnium and platinum were deposited onto molybdenum grids by ion-beam assisted deposition method. Electron-emission characteristics from molybdenum grids with Hf and Pt films, which were contaminated by active electron-emission substances (Ba, BaO) of the cathode, were measured using analogous diode method. The surfaces of grids were analyzed by X-ray diffraction. The results revealed that the reaction between BaO and Hf formed BaHfO₃ compound, which greatly reduced the accumulation of BaO on the surface and accordingly decreased grid emission. In contrast, Ba were formed by the decomposition of BaO on the surface of Pt film under high temperature and re-evaporated from its surface, which reduced the active electron-emission substances on the surface of the grid and effectively restrained grid emission. Their mechanisms for grid-emission suppression are discussed and a good method to develop new grid-coating materials is suggested.