Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step

Low-temperature step-graded high indium content InAlAs (In% = 0.75) metamorphic buffer layers with reverse step layer grown on GaAs substrate by molecular beam epitaxy are investigated in this paper. The composition and the strain relaxation of the top InAlAs layer are determined by high-resolution triple-axis X-ray diffraction measurements, which show that the top InAlAs layer is nearly fully relaxed and the growth parameters for these samples have little influence on the strain relaxation ratio. Surface morphology is observed by reflection high-energy electron diffraction pattern and atomic force microscopy. The surface morphology is found to depend strongly on both the growth temperature and the As flux. Compared with other samples, the sample growth under the optimized conditions has the smallest value of root mean square surface roughness. Furthermore, the ω − 2θ and ω scans of the triple-axis X-ray diffraction and transmission electron microscopy result also show the sample grown under the optimized conditions has good crystalline quality.     

Characteristics of pentacene organic thin film transistor with top gate and bottom contact

High performance pentacene organic thin film transistors (OTFT) were designed and fabricated using SiO₂ deposited by electron beam evaporation as gate dielectric material. Pentacene thin films were prepared on glass substrate with S--D electrode pattern made from ITO by means of thermal evaporation through self-organized process. The threshold voltage V_TH was --2.75± 0.1V in 0---50V range, and that subthreshold slopes were 0.42± 0.05V/dec. The field-effect mobility (μ_EF) of OTFT device increased with the increase of V_DS, but the μ_EF of OTFT device increased and then decreased with increased V_GS when V_DS was kept constant. When V_DS was --50V, on/off current ratio was 0.48× 10⁵ and subthreshold slope was 0.44V/dec. The μ_EF was 1.10cm²/(V.s), threshold voltage was --2.71V for the OTFT device.     

Dual-frequency Brillouin fiber laser for optical generation of tunable low-noise radio frequency/microwave frequency

We demonstrate a new approach, i.e., a cw dual-frequency Brillouin fiber laser pumped by two independent single-frequency Er-doped fiber lasers, for the generation of tunable low-noise rf/microwave optical signals. Its inherent features of both linewidth narrowing effect in a Brillouin fiber cavity and common mode noise cancellation between two laser modes sharing a common cavity allow us to achieve high frequency stability without using a supercavity. Beat frequency of the dual-frequency Brillouin fiber laser can be tuned from tens of megahertz up to 100 GHz by thermally tuning the wavelengths of the two pump lasers with tuning sensitivity of approximately 1.4 GHz/ degrees C. Allan variance measurements show the beat signals have the hertz-level frequency stability.     

New bifurcations of basin boundaries involving Wada and a smooth Wada basin boundary

This paper demonstrates and analyses double heteroclinic tangency in a three-well potential model, which can produce three new types of bifurcations of basin boundaries including from smooth to Wada basin boundaries, from fractal to Wada basin boundaries in which no changes of accessible periodic orbits happen, and from Wada to Wada basin boundaries. In a model of mechanical oscillator, it shows that a Wada basin boundary can be smooth.     

Effect of polyvinylpyrrolidone on the structure and laser damage resistance of sol–gel silica anti-reflective films

The effect of polyvinylpyrrolidone (PVP) on the structure and laser-induced damage threshold (LIDT) of sol–gel silica anti-reflective films is investigated. The results of dynamic light scattering, transmission electron microscopy, and small angle X-ray scattering, show that the PVP molecules surrounded the silica sol particles through the strong hydrogen bonds between Si-OH groups and the PVP. As a result, the growth of silica particles was restricted and thus the interface layer between the silica particles and the solvent become thickened with PVP content. Furthermore, the PVP reduced the porosity of the film, so the anti-reflection properties of the film were weakened. A multi-fractal analysis showed that the appropriate addition of PVP, 1 weight percent (wt%), could improve the surface fractal structure of the film, but that higher PVP content resulted in reduced surface uniformity. The addition of PVP lead to improved LIDT.     

Charge/discharge characteristics of sulfur composite electrode at different temperature and current density in rechargeable lithium batteries

The charge/discharge characteristics of the sulfur composite cathodes were investigated at different temperatures and different current densities. The composite presented the discharge capacities of 854 and 632 mAh g⁻¹ at 60 and −20 °C, respectively, while it had the discharge capacities of 792 mAh g⁻¹ at 25 °C. The composite presented the discharge capacities of 792 and 604 mAh g⁻¹ at 55.6 and 667 mA g⁻¹, respectively, at room temperature. The results showed that the sulfur composite cathodes presented good charge/discharge characteristics between 60 and −20 °C and at a high c-rate up to 667 mA g⁻¹.     

InxGa1-xN薄膜的弯曲因子及斯托克斯移动研究

采用常压金属有机化学汽相沉积(MOCVD)技术以Al2O3为衬底在GaN膜上生长了InxGa1-xN薄膜。以卢瑟福背散射／沟道技术、光透射谱、光致发光光谱对InxGa1-xN／GaN／AI2O3样品进行了测试。研究了InxGa1-xN薄膜的弯曲因子及斯托克斯移动。结果表明，采用光透射谱、光致发光光谱得到的InxGa1-xN薄膜的禁带宽度一致，InxGa1-xN薄膜并不存在斯托克斯移动。InxGa1-xN薄膜的In组分分别为0．04，0．06，0．24，0．26时，其弯曲因子分别为3．40,2．36，1．82，3．70。随In组分变化。InxGa1-xN薄膜的弯曲因子的变化并没有一定的规律，表明InxGa1-xN薄膜的禁带宽度随In组分的变化关系复杂。     

激光光栅多普勒效应微小振动测量

为了提高测量微小振动的精度和动态范围，提出一种基于激光光栅多普勒效应的微振动测量系统。通过对差拍信号的频率分析，以峰值频率比值的方法可以排除干扰获得被测振动频率，找到振动的翻转点并判断振幅的大小；推导了在翻转点附近的微小位移与电压值的关系，对于小于计数当量值的位移由测量电压得到，提高了微小振动位移的测量精度以及系统测量的最小分辨率、动态范围。实验系统的频率范围为0．5～500Hz，振幅为20～10mm，相对误差小于1％，其动态范围大于100dB。     

Mechanical Properties of Breast Cancer Cell Membrane Studied with Optical Tweezers

Membrane tethers are extracted from breast cancer cells using a force generated by an optical trap. It is experimentally obtained that the radius of tether is about 0.1μm and the static tether force is about 8.5 pN. Calculations based on the experimental measurements give a bending modulus for the tether of 1.35 x 10^-19 N.m and a surface membrane tension of 6.76 x 10^-6 N/m in the breast cancer cell. The treatment with cytochalasin D results in the decreasing bending modulus and decreasing apparent surface tension. When the membrane protein caveolin is over-expressed, similar cases occur in bending modulus and apparent surface tension. In addition, the viscous resistance coefficient of the membrane is calculated to be 1.15pN.s/μm according to the dynamic tether forces obtained under different pulling velocities.     

Transient saturation absorption spectroscopy excited near the band gap at high excitation carrier density in GaAs

Transient saturation absorption spectroscopy in GaAs thin films was investigated using femtosecond pump and supercontinuum probe technique at excitation densities higher than 1×10^{19}cm^{-3}. The Coulomb enhancement factor of the electron－hole plasma results in a spectrum hole at the pump wavelength. Two distinct transmission peaks at two sides of the pump wavelength are observed, arising from the bleaching of transitions from the heavy- and light-hole bands to the conduction band. The dynamic process of the transient saturation absorption is fitted using a bi-exponential function. The fast decay process is dominated by the carrier-phonon scattering and the slow process may be attributed to the electron－hole recombination.