强流脉冲电子束表面改性CuFe10合金的显微组织和性能研究（英文）

研究了不同脉冲次数强流脉冲电子束表面改性对CuFe10合金组织及性能的影响。强流脉冲电子束处理CuFe10合金的重熔表面出现了火山坑和直径为100nm到1μm的富铁球,表明了强流脉冲电子束处理CuFe10合金表面发生了液相分离。强流脉冲电子束脉冲轰击30次后,CuFe10合金表面的显微硬度与耐蚀性能均得到显著改善,主要是由于强流脉冲电子束轰击处理CuFe10合金表层引发的快速熔凝过程中表面发生了液相分离及晶粒细化的缘故。     

Enzymatic polymerization of aniline and phenol derivatives catalyzed by horseradish peroxidase in dioxane

Phenylenediamines, 4‐aminophenol and 1,4‐hydroquinone were polymerized via the catalysis of horseradish peroxidase in dioxane at ambient conditions by using hydrogen peroxide as the oxidant. Polymers formed in good yields are black powders soluble in dimethylformamide and dimethylsulfoxide. Several factors influencing the polymer yield were examined using 2‐phenylenediamine as substrate. It was found that pH value gave almost no influence in the range between 6.0 and 7.0, while the polymer yield increased as the concentration of the substrate in dioxane increased. The influence of the oxidant amount was still more obvious; larger excess of the oxidant being necessary in getting higher polymer yield. Using the optimized polymerization conditions, the yield of poly(2‐phenylenediamine) was achieved up to 77.8%. Weight average molecular weight of the polymers are higher than 1 × 10⁴ as determined by gel permeation chromatography. The structure of the polymers was characterized by using nuclear magnetic resonance and infrared techniques. Copyright © 2000 John Wiley & Sons, Ltd.     

星载光电跟踪系统连续帧图像快速识别定位算法研究

为了解决星载光电跟踪系统对连续帧图像快速识别、准确定位的要求.在深入分析连续图像序列特性和星载光电跟踪系统特点的基础上,利用光电跟踪系统转台的角度变化信息,对图像序列进行帧间差值运算以获得目标残差图,并基于残差图和原始图像信息提出了一种新的目标识别定位算法,大大地减小了运算量.结合中值滤波和自适应波门跟踪算法,实现了运动目标的快速跟踪定位.通过对目标实测图像序列的实验,结果证明,该算法具有快速、稳定等优点,能满足星载光电跟踪系统实时图像跟踪的要求.     

Bis­(tetra­phenyl­phospho­nium) (μ‐tetra­thio­tungstenio‐κ4S,S′:S′′:S′′′)­bis­[(cyano‐κC)­cuprate](2–) aceto­nitrile solvate monohydrate

The reaction of CuCN and KCN with (NH₄)₂[WS₄] followed by cation exchange with PPh₄Br produced the title compound, (C₂₄H₂₀P)₂[Cu₂WS₄(CN)₂]·CH₃CN·H₂O or (PPh₄)₂[(NC)Cu(μ‐S)₂W(μ‐S)₂Cu(CN)]·MeCN·H₂O. In the structure of the dianion, [(NC)Cu(μ‐S)₂W(μ‐S)₂Cu(CN)]²⁻, the WS₄ moiety acts as a bidentate ligand that binds two CuCN groups, thus forming a slightly bent WCu₂ core with approximate D_2d symmetry. The W—Cu distances are in the range 2.6463 (6)–2.6545 (6) Å.     

三种环棱螺贝壳形态及齿舌的比较研究

对三种环棱螺贝壳的壳高，壳宽，壳口长，壳口宽，体螺层高，倒数第２螺层高和宽，后三螺层高８个形态参数进行了分析，并对其齿舌的形态作了比较。结果表明，三种环棱螺，除铜锈环棱螺贝壳壳高和其它两种螺有差异外，贝壳形态参数及形态参数之间的关系并无显著差异，齿舌的形态也相似。因此作者认为梨形环棱螺是方形环棱螺的次级同物异名。     

Anionic Sublattices in Halide Solid Electrolytes: A Case Study with the High-Pressure Phase of Li3ScCl6

The Li₃MX₆ compounds (M=Sc, Y, In; X=Cl, Br) are known as promising ionic conductors due to their compatibility with typical metal oxide cathode materials. In this study, we have successfully synthesized γ-Li₃ScCl₆ using high pressure for the first time in this family. Structural analysis revealed that the high-pressure polymorph crystallizes in the polar and chiral space group P6₃mc with hexagonal close-packing (hcp) of anions, unlike the ambient-pressure α-Li₃ScCl₆ and its spinel analog with cubic closed packing (ccp) of anions. Investigation of the known Li₃MX₆ family further revealed that the cation/anion radius ratio, r_M/r_X, is the factor that determines which anion sublattice is formed and that in γ-Li₃ScCl₆, the difference in compressibility between Sc and Cl exceeds the ccp r_M/r_X threshold under pressure, enabling the ccp-to-hcp conversion. Electrochemical tests of γ-Li₃ScCl₆ demonstrate improved electrochemical reduction stability. These findings open up new avenues and design principles for lithium solid electrolytes, enabling routes for materials exploration and tuning electrochemical stability without compositional changes or the use of coatings.     

单原子作为保护基团实现石墨双炔纳米线的表面合成

由于在贵金属表面的双炔单元具有高反应活性,表面合成半导体性质的石墨双炔纳米线通常会受到副反应的严重影响,难以分立的纳米线的高质量制备.本文利用化学气相沉积1,4-bis(4-bromophenyl)-1,3-butadiyne分子到表面发生Ullmann偶联反应,可实现无支链的石墨双炔纳米线[-C≡C-Ph_2-C≡C-]_n (PYP)的高产率合成.进一步的单化学键分辨的非接触原子力显微镜表征揭示了单个金增原子与双炔键之间形成了π-ligand键,有效地充当了反应过程中双炔单元的保护基团,避免了偶联过程中的副反应,从而实现了分立的超长石墨双炔纳米线的合成.这项研究将启发对在表面反应中各类表面增原子所起保护作用的更深入研究.     

杂环分子-吗啉在同步辐射真空紫外光下的光电离解离研究

本文采用同步辐射真空紫外光电离质谱法和理论计算方法,研究了吗啉单体的光电离、解离及随后的裂解反应.实验测得吗啉单体的垂直电离能为8.37 eV(±0.05),与理论计算值8.41 eV相当吻合.实验观察到荷质比为86、57和29的吗啉碎片离子.实验和理论结果表明:荷质比为86的碎片是通过失去氢原子而产生的,而荷质比为57的碎片是通过开环消除CH_2O而形成的;荷质比为29的碎片是通过消除C_2H_4从碎片离子(C_3H_7N)~+(m/z=57)进一步解离而产生的.这一发现为研究脂肪族化合物的光损伤提供了有价值的见解,可能被转化为活细胞和其他生物系统.     

Direct evidence for hydrated protons as the active species in artificial photocatalytic water reduction into hydrogen

Photocatalytic water reduction to hydrogen over oxide semiconductors is one of the most extensively investigated artificial photocatalytic reactions, but the nature of the active species has not yet been elucidated. Here, we successfully prepared Pt/rutile TiO_2(110) surfaces with hydrated proton species via co-adsorption of hydrogen and water and observed the photocatalytic reduction of hydrated protons to H_2 upon UV light illumination. These results provide experimental evidence to prove hydrated protons as the active species for photocatalytic water reduction to hydrogen and demonstrate the occurrence of photocatalytic reduction of hydrated protons to H_2 within the H-bonding network on the catalyst surface instead of directly on the catalyst surface. The Pt-TiO_2 interface is capable of dissociating water to form hydroxyl groups that facilitate the formation of H-bonding network on the catalyst surface to enhance the photocatalytic H_2 production. Our results greatly advance fundamental understanding of artificial photocatalytic water reduction.     

Density Functional Theory Calculations Revealing Metal‐like Band Structures and Work Function Variation for Ultrathin Gallium Arsenide (111) Surface Layers

Density functional theory (DFT) calculations have been performed on tunable numbers of gallium arsenide (100), (110), and (111) planes for their electron density of states (DOS) plots and the corresponding band diagrams. The GaAs (100) and (110) planes show the same semiconducting band structure with tunable plane layers and a band gap of 1.35 eV around the Fermi level. In contrast, metal‐like band structures are obtained with a continuous band structure around the Fermi level for 1, 2, 4, 5, 7, and 8 layers of GaAs (111) planes. For 3, 6, and 9 GaAs (111) planes, the same semiconducting band structure as seen in the (100) and (110) planes returns. The results suggest the GaAs {111} face should be more electrically conductive than its {100} and {110} faces, due to the merged conduction band and valence band. GaAs (100) and (110) planes give a fixed work function, but the (111) planes have variable work function values that are smaller than that obtained for the (100) and (110) planes. Furthermore, bond length, bond geometry, and frontier orbital electron number and energy distribution show notable differences between the metal‐like and semiconducting plane cases, so the emergence of plane‐dependent electronic properties have quantum mechanical origin at the orbital level. GaAs should possess similar facet‐dependent electronic properties to those of Si and Ge.